Abstract:
Systeme, Vorrichtungen und Techniken bezüglich des Projizierens dynamischer Merkmalsmuster auf eine Szene zur Verwendung in stereoskopischer Bildgebung sind besprochen. Solche Techniken können Implementieren eines dynamischen transmittierenden Elements in einem optischen Pfad zwischen einem Projektor und der Szene beinhalten, um ein statisches Muster, das von dem Projektor emittiert wird, zu modifizieren, um die Szene mit einem dynamischen Muster zu beleuchten.
Abstract:
In general, in one aspect, a three dimensional (3D) display includes an optical stack, a backlight, panel electronics and a backlight driver. The optical stack is to present left eye and right eye images. The backlight is to illuminate the optical stack so the left eye and right eye images are visible and to provide signals for synchronizing the image illuminated on the optical stack with shutter glasses worn by a user to enable a left eye to view the left eye images and a right eye to view the right eye images. The panel electronics are to generate the left eye and right eye images on the optical stack. The backlight driver is to control operation of the backlight.
Abstract:
A technique includes pulse width modulating a beam of a light to establish a pixel intensity. The technique includes controlling a light source to modulate an illumination of the beam to create different tonal resolution ranges for the pixel intensity.
Abstract:
A METHOD AND AN APPARATUS FOR COOLING A SEMICONDUCTOR DIE. IN ONE EMBODIMENT, A C4 PACKAGED SEMICONDUCTOR DIE (301) IS THERMALLY COUPLED TO A COOLING PLATE (313) HAVING AN OPENING (315). THE OPENING OF THE COOLING PLATE IS DISPOSED OVER A BACK SIDE SURFACE (311) OF THE SEMICONDUCTOR DIE (301) SUCH THAT DIRECT UNOBSTRUCTED ACCESS TO THE EXPOSED BACK SIDE SURFACE OF THE SEMICONDUCTOR DIE IS PROVIDED. A CONFORMABLE THERMAL CONDUCTOR, SUCH AS INDIUM (317), IS DISPOSED BETWEEN THE SEMICONDUCTOR DIE (301) AND THE COOLING PLATE (313) TO IMPROVE THE THERMAL COUPLING BETWEEN THE SEMICONDUCTOR AND COOLING PLATE. IN ONE EMBODIMENT, THE SEMICONDUCTOR DIE IS MOUNTED ON A CIRCUIT BOARD (307) AND A COOLING BLOCK (319) IS DISPOSED ON THE OPPOSITE SIDE OF THE CIRCUIT HOARD (307). THE COOLING PLATE (513) IS THERMALLY COUPLED TO THE COOLING BLOCK (519) WITH HEAT TRANSFER CONDUITS (523A & 523B), SUCH AS THERMAL SCREWS, THAT EXTEND THROUGH THE CIRCUIT BOARD (507) TO TRANSFER THE HEAT FROM THE SEMICONDUCTOR DIE (501) THROUGH THE COOLING PLATE THROUGH THE HEAT TRANSFER CONDUITS TO THE COOLING BLOCK LOCATED ON THE OPPOSITE SIDE OF THE CIRCUIT BOARD. IN ONE EMBODIMENT, COOLANT IS CIRCULATED THROUGH THE COOLING BLOCK TO REMOVE HEAT FROM THE COOLING BLOCK. (FIGURE 3)
Abstract:
A FIDUCIAL (301,401) FOR ALIGNING AN INTEGRATED CIRCUIT DIE. IN ONE EMBODIMENT, THE FIDUCIAL IS CONFIGURED TO BE EXPOSED BY LASER CHEMICAL ETCHING THROUGH A SILICON SUBSTRATE (313) THROUGH THE BACK SIDE (331) OF A C4 PACKAGED INTEGRATED CIRCUIT DIE. THE PRESENTLY DESCRIBED FIDUCIAL INCLUDES FLOATING DIFFUSION REGIONS DISPOSED IN THE SUBSTRATE. AN OXIDE LAYER (321) FREE OFMETAL CONTACTS IS DISPOSED OVER THE DIFFUSION REGIONS (307, 309,311) WITHIN THE FIDUCIAL REGION (303,305) OF THE INTEGRATED CIRCUIT. A METAL PATTERN (323) LAYER IS DISPOSED BENEATH THE OXIDE LAYER TO PROVIDE ALIGNMENT INFORMATION. THE METAL PATTERN LAYER IS CONFIGURED TO BE VISIBLE THROUGH THE OXIDE LAYER AFTER THE SILICON SUBSTRATE HAS BEEN REMOVED FROM THE FIDUCIAL REGION. A LIGHT BLOCK (327) IS DISPOSED BETWEEN THE METAL PATTERN LAYER AND AN UNDERLYING EPOXY (325)UNDERFILL LAYER TO MINIMIZE THE RISK OF AN EXCESSIVE AMOUNT OF LIGHT FROM BEING EXPOSED TO THE UNDERLYING EPOXY LAYER, WHICH MINIMIZES THE RISK OF THE EPOXY LAYER FROM DAMAGING THE INTEGRATED CIRCUIT FROM EXCESSIVE LIGHT EXPOSURE. SINCE THE PRESENTLYDESCRIBED FIDUCIAL DOES NOT INCLUDE ANY CONTACTS IN THE OXIDE LAYER, THE ADDITIONAL STEP OF UTILIZING A FOCUS ION BEAM MILL IS NO LONGER NECESSARY AND THE PRESENTLY DESCRIBED FIDUCIAL THEREFORE ONLY NEEDS TO BE ETCHED WITH A LASER CHEMICAL ETCHER TO BE EXPOSED(FIG. 3 & 4)
Abstract:
A method and an apparatus for cooling a semiconductor die. In one embodiment, a C4 packaged semiconductor die is thermally coupled to a cooling plate having an opening. The opening of the cooling plate is disposed over a back side surface of the semiconductor die such that direct unobstructed access to the exposed back side surface of the semiconductor die is provided. A conformable thermal conductor, such as indium, is disposed between the semiconductor die and the cooling plate to improve the thermal coupling between the semiconductor and cooling plate. In one embodiment, the semiconductor die is mounted on a circuit board and a cooling block is disposed on the opposite side of the circuit board. The cooling plate is thermally coupled to the cooling block with heat transfer conduits, such as thermal screws, that extend through the circuit board to transfer the heat from the semiconductor die through the cooling plate through the heat transfer conduits to the cooling block located on the opposite side of the circuit board. In one embodiment, coolant is circulated through the cooling block to remove heat from the cooling block.
Abstract:
In general, in one aspect, a three dimensional (3D) display includes an optical stack, a backlight, panel electronics and a backlight driver. The optical stack is to present left eye and right eye images. The backlight is to illuminate the optical stack so the left eye and right eye images are visible and to provide signals for synchronizing the image illuminated on the optical stack with shutter glasses worn by a user to enable a left eye to view the left eye images and a right eye to view the right eye images. The panel electronics are to generate the left eye and right eye images on the optical stack. The backlight driver is to control operation of the backlight.