公开(公告)号：US12255130B2

公开(公告)日：2025-03-18

申请号：US16884452

申请日：2020-05-27

Applicant: INTEL CORPORATION

Inventor： Hongxia Feng ,  Jeremy Ecton ,  Aleksandar Aleksov ,  Haobo Chen ,  Xiaoying Guo ,  Brandon C. Marin ,  Zhiguo Qian ,  Daryl Purcell ,  Leonel Arana ,  Matthew Tingey

IPC: H01L23/522 ,  H01L23/66

Abstract: Processes and structures resulting therefrom for the improvement of high speed signaling integrity in electronic substrates of integrated circuit packages, which is achieved with the formation of airgap structures within dielectric material(s) between adjacent conductive routes that transmit/receive electrical signals, wherein the airgap structures decrease the capacitance and/or decrease the insertion losses in the dielectric material used to form the electronic substrates.

公开(公告)号：US20210375746A1

公开(公告)日：2021-12-02

申请号：US16884452

申请日：2020-05-27

Applicant: INTEL CORPORATION

Inventor： Hongxia Feng ,  Jeremy Ecton ,  Aleksandar Aleksov ,  Haobo Chen ,  Xiaoying Guo ,  Brandon C. Marin ,  Zhiguo Qian ,  Daryl Purcell ,  Leonel Arana ,  Matthew Tingey

IPC: H01L23/522 ,  H01L23/66

Abstract: Processes and structures resulting therefrom for the improvement of high speed signaling integrity in electronic substrates of integrated circuit packages, which is achieved with the formation of airgap structures within dielectric material(s) between adjacent conductive routes that transmit/receive electrical signals, wherein the airgap structures decrease the capacitance and/or decrease the insertion losses in the dielectric material used to form the electronic substrates.