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公开(公告)号:DK1779418T3
公开(公告)日:2014-12-08
申请号:DK05773487
申请日:2005-06-17
Applicant: ION OPTICS INC
Inventor: PRALLE MARTIN U , DALY JAMES T , PUSCASU IRINA , MCNEAL MARK P , JOHNSON EDWARD A
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公开(公告)号:CA2573149A1
公开(公告)日:2006-01-26
申请号:CA2573149
申请日:2005-07-08
Applicant: ION OPTICS INC
Inventor: PUSCASU IRINA , PRALLE MARTIN U , DALY JAMES T , JOHNSON EDWARD A , MCNEAL MARK P
IPC: H01L33/00
Abstract: An infrared emitter, which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow hand of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features are defined in the device in a periodic manner or quasi-periodic. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects.
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公开(公告)号:CA2573149C
公开(公告)日:2017-06-06
申请号:CA2573149
申请日:2005-07-08
Applicant: ION OPTICS INC
Inventor: PUSCASU IRINA , PRALLE MARTIN U , DALY JAMES T , MCNEAL MARK P , JOHNSON EDWARD A
Abstract: An infrared emitter (10), which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer (12), a dielectric material layer (14) overlaying the semiconductor material layer, and a metallic material layer (16) having an inner side overlaying the dielectric material layer. The semiconductor material layer (12) is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features (18) are defined in the device in a periodic or quasi-periodic manner. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects. The emitter device may also function as a selective detector of electromagnetic radiation.
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公开(公告)号:CA2573928A1
公开(公告)日:2006-01-19
申请号:CA2573928
申请日:2005-06-17
Applicant: ION OPTICS INC
Inventor: PUSCASU IRINA , DALY JAMES T , PRALLE MARTIN U , JOHNSON EDWARD A , MCNEAL MARK P
IPC: H01L21/44
Abstract: An infrared emitter, which utilizes a photonic bandgap (PBG) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of holes are defined in the device in a periodic manner, wherein each hole extends at least partially through the metallic material layer. The three material layers are adapted to transfer energy from the semiconductor material layer to the outer side of the metallic material layer and emit electromagnetic energy in a narrow band of wavelengths from the outer side of the metallic material layer.
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公开(公告)号:WO2006007446A3
公开(公告)日:2009-04-02
申请号:PCT/US2005021617
申请日:2005-06-17
Applicant: ION OPTICS INC , PRALLE MARTIN U , DALY JAMES T , PUSCASU IRINA , MCNEAL MARK P , JOHNSON EDWARD A
Inventor: PRALLE MARTIN U , DALY JAMES T , PUSCASU IRINA , MCNEAL MARK P , JOHNSON EDWARD A
IPC: H01L33/00
CPC classification number: G01J5/20 , B82Y20/00 , G01J1/02 , G01J1/0252 , G01J1/42 , G01J3/02 , G01J3/0286 , G01J3/108 , G01J5/02 , G01J5/023 , G01J5/024 , G01J5/04 , G01J5/045 , G01J5/046 , G01J5/08 , G01J5/0803 , G01J5/0853 , G01J5/0862 , G01N21/3504 , G01N2021/317 , G01N2021/3513 , G02B6/1225 , H01L27/14676
Abstract: An infrared emitter, which utilizes a photonic bandgap (PBG) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of holes are defined in the device in a periodic manner, wherein each hole extends at least partially through the metallic material layer. The three material layers are adapted to transfer energy from the semiconductor material layer to the outer side of the metallic material layer and emit electromagnetic energy in a narrow band of wavelengths from the outer side of the metallic material layer.
Abstract translation: 利用光子带隙(PBG)结构产生具有窄波长波段的电磁发射的红外发射器包括半导体材料层,覆盖半导体材料层的电介质材料层和具有内侧重叠的金属材料层 介电材料层。 半导体材料层能够耦合到能量源以将能量引入到半导体材料层。 定期地在器件中限定一组孔,其中每个孔至少部分地延伸通过金属材料层。 三个材料层适于将能量从半导体材料层转移到金属材料层的外侧,并从金属材料层的外侧发射出窄波长的波长的电磁能。
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公开(公告)号:WO2006010133A3
公开(公告)日:2006-05-04
申请号:PCT/US2005024654
申请日:2005-07-08
Applicant: ION OPTICS INC , PUSCASU IRINA , PRALLE MARTIN U , DALY JAMES T , MCNEAL MARK P , JOHNSON EDWARD A
Inventor: PUSCASU IRINA , PRALLE MARTIN U , DALY JAMES T , MCNEAL MARK P , JOHNSON EDWARD A
IPC: H01L33/00
CPC classification number: G01N21/255 , B82Y20/00 , B82Y30/00 , G01J1/42 , G01J3/108 , G01J5/20 , G01N21/3504 , H01L31/101
Abstract: An infrared emitter (10), which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow band of wavelengths, includes a semiconductor material layer (12), a dielectric material layer (14) overlaying the semiconductor material layer, and a metallic material layer (16) having an inner side overlaying the dielectric material layer. The semiconductor material layer (12) is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features (18) are defined in the device in a periodic or quasi-periodic manner. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects. The emitter device may also function as a selective detector of electromagnetic radiation.
Abstract translation: 利用光子晶体(PC)结构产生具有窄波长带的电磁发射的红外发射器(10)包括半导体材料层(12),覆盖半导体材料层的电介质材料层(14),以及 金属材料层(16),其具有覆盖介电材料层的内侧。 半导体材料层(12)能够耦合到用于将能量引入半导体材料层的能量源。 表面特征(18)的阵列以周期性或准周期性方式在器件中定义。 发射器件适于发射具有通过周期性分布的表面特征的参数确定的光谱特性的电磁能,参数包括形状,尺寸,深度,分布几何形状,周期性,材料性质和缺陷。 发射器件还可以用作电磁辐射的选择性检测器。
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公开(公告)号:EP1779418A4
公开(公告)日:2010-11-10
申请号:EP05773487
申请日:2005-06-17
Applicant: ION OPTICS INC
Inventor: PRALLE MARTIN U , DALY JAMES T , PUSCASU IRINA , MCNEAL MARK P , JOHNSON EDWARD A
IPC: H01L33/00
CPC classification number: G01J5/20 , B82Y20/00 , G01J1/02 , G01J1/0252 , G01J1/42 , G01J3/02 , G01J3/0286 , G01J3/108 , G01J5/02 , G01J5/023 , G01J5/024 , G01J5/04 , G01J5/045 , G01J5/046 , G01J5/08 , G01J5/0803 , G01J5/0853 , G01J5/0862 , G01N21/3504 , G01N2021/317 , G01N2021/3513 , G02B6/1225 , H01L27/14676
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公开(公告)号:EP1779444A4
公开(公告)日:2011-01-05
申请号:EP05771278
申请日:2005-07-08
Applicant: ION OPTICS INC
Inventor: PUSCASU IRINA , PRALLE MARTIN U , DALY JAMES T , MCNEAL MARK P , JOHNSON EDWARD A
IPC: H01L33/00
CPC classification number: G01N21/255 , B82Y20/00 , B82Y30/00 , G01J1/42 , G01J3/108 , G01J5/20 , G01N21/3504 , H01L31/101
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