公开(公告)号：US20190043800A1

公开(公告)日：2019-02-07

申请号：US16152221

申请日：2018-10-04

Applicant: Intel IP Corporation

Inventor： Klaus Jürgen REINGRUBER ,  Sven ALBERS ,  Christian Georg GEISSLER ,  Georg SEIDEMANN ,  Bernd WAIDHAS ,  Thomas WAGNER ,  Marc DITTES

IPC: H01L23/528 ,  H05K1/11 ,  H01L23/00 ,  H01L23/498 ,  C25D5/10 ,  C25D7/12 ,  C25D5/02 ,  H01L23/522 ,  C25D5/48 ,  C25D5/54 ,  H05K1/02

Abstract: Semiconductor packages having variable redistribution layer thicknesses are described. In an example, a semiconductor package includes a redistribution layer on a dielectric layer, and the redistribution layer includes first conductive traces having a first thickness and second conductive traces having a second thickness. The first thickness may be different than the second thickness, e.g., the first thickness may be less than the second thickness.

公开(公告)号：US20180331053A1

公开(公告)日：2018-11-15

申请号：US15776474

申请日：2015-12-21

Applicant: Intel IP Corporation

Inventor： Christian GEISSLER ,  Sven ALBERS ,  Georg SEIDEMANN ,  Andreas WOLTER ,  Klaus REINGRUBER ,  Thomas WAGNER ,  Marc DITTES

IPC: H01L23/00

Abstract: An electrical device includes a redistribution layer structure, an inter-diffusing material contact structure and a vertical electrically conductive structure located between the redistribution layer structure and the inter-diffusing material contact structure. The vertical electrically conductive structure includes a diffusion barrier structure located adjacently to the inter-diffusing material contact structure. Further, the diffusion barrier structure and the redistribution layer structure comprise different lateral dimensions.

公开(公告)号：US20180331070A1

公开(公告)日：2018-11-15

申请号：US15774906

申请日：2015-12-26

Applicant: Intel IP Corporation

Inventor： Georg SEIDEMANN ,  Klaus REINGRUBER ,  Christian GEISSLER ,  Sven ALBERS ,  Andreas WOLTER ,  Marc DITTES ,  Richard PATTEN

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/538 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/48 ,  H01L23/49816 ,  H01L23/5384 ,  H01L24/19 ,  H01L24/20 ,  H01L24/25 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/2518 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/92224 ,  H01L2224/97 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2224/81

Abstract: Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.