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    GAS SENSING METHOD AND DEVICE
    2.
    发明公开
    GAS SENSING METHOD AND DEVICE 审中-公开

    公开(公告)号：EP4191238A1

    公开(公告)日：2023-06-07

    申请号：EP23153616.0

    申请日：2018-03-27

    Applicant: InvenSense, Inc.

    Inventor： Liu, Fang ,  Hartwell, Peter ,  Lim, Martin ,  Yang, Yushi

    IPC: G01N27/12 ,  G01N27/18 ,  G01N33/00

    Abstract: The present invention relates to systems and methods for detecting gases in an environment using chemical and thermal sensing. In one embodiment, a method includes exposing a chemiresistor embedded within a sensor pixel to a gas in an environment; setting a heater embedded within the sensor pixel to a sensing temperature, the sensing temperature being greater than room temperature; measuring an electrical resistance of the chemiresistor in response to setting the heater to the sensing temperature; and in response to a difference between the electrical resistance of the chemiresistor and a reference electrical resistance being less than a threshold, supplying a fixed power input to the heater embedded within the sensor pixel and measuring a temperature of the sensor pixel relative to a reference temperature.

    Internal electrical contact for enclosed MEMS devices
    3.
    发明公开
    Internal electrical contact for enclosed MEMS devices 审中-公开
    用于包封MEMS装置的内部的电接触

    公开(公告)号：EP2762441A3

    公开(公告)日：2014-10-01

    申请号：EP14153050.1

    申请日：2014-01-29

    Applicant: InvenSense, Inc.

    Inventor： Huang, Kegang ,  Shin, Jongwoo ,  Lim, Martin ,  Daneman, Michael Julian ,  Seeger, Joseph

    IPC: B81B7/00

    CPC classification number: B81C1/00301 ,  B81B7/0064 ,  B81B2207/098 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/031

    Abstract: A MEMS device is disclosed. The MEMS device comprises a MEMS substrate. The MEMS substrate includes a first semiconductor layer connected to a second semiconductor layer with a dielectric layer in between. MEMS structures are formed from the second semiconductor layer and include a plurality of first conductive pads. The MEMS device further includes a base substrate which includes a plurality of second conductive pads thereon. The second conductive pads are connected to the first conductive pads. Finally, the MEMS device includes a conductive connector formed through the dielectric layer of the MEMS substrate to provide electrical coupling between the first semiconductor layer and the second semiconductor layer. The base substrate is electrically connected to the second semiconductor layer and the first semiconductor layer.

    Integrated structure with bidirectional vertical actuation
    4.
    发明公开
    Integrated structure with bidirectional vertical actuation 有权
    Integrierte Struktur mit bidirectionalem vertikalem Antrieb

    公开(公告)号：EP2778118A2

    公开(公告)日：2014-09-17

    申请号：EP14250072.7

    申请日：2014-04-09

    Applicant: InvenSense, Inc.

    Inventor： Daneman, Michael Julian ,  Lim, Martin ,  Hung, Li-Wen ,  Lloyd, Stephen

    IPC: B81B3/00

    CPC classification number: H01L27/1203 ,  B81B3/0056 ,  B81B2201/0221 ,  B81B2203/053

    Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a first substrate with a first surface and a second surface, the first substrate including a base layer, a moveable beam disposed on the base layer, at least one metal layer, and one or more standoffs disposed on the base layer such that one or more metal layers are situated on the top surface of the one or more standoffs. The MEMS device further includes a second substrate including one or more metal layers bonded to the one or more standoffs resulting in an electrical connection between at least a portion of the one or more metal layers of the second substrate and one or more of the at least one electrode on the bottom surface and the at least one electrode on the top surface.

    Abstract translation: 微电子机械系统（MEMS）装置包括具有第一表面和第二表面的第一基底，第一基底包括基底层，设置在基底层上的可移动光束，至少一个金属层，以及一个或 更多的间隔设置在基层上，使得一个或多个金属层位于一个或多个支座的顶表面上。 MEMS器件还包括第二衬底，其包括结合到一个或多个支座的一个或多个金属层，导致在第二衬底的一个或多个金属层的至少一部分与至少一个或多个之间的电连接 底表面上的一个电极和顶表面上的至少一个电极。

    Integrated structure with bidirectional vertical actuation
    8.
    发明公开
    Integrated structure with bidirectional vertical actuation 有权
    一体化结构与垂直驱动bidirectionalem

    公开(公告)号：EP2778118A3

    公开(公告)日：2014-10-29

    申请号：EP14250072.7

    申请日：2014-04-09

    Applicant: InvenSense, Inc.

    Inventor： Daneman, Michael Julian ,  Lim, Martin ,  Hung, Li-Wen ,  Lloyd, Stephen

    IPC: B81B3/00

    CPC classification number: H01L27/1203 ,  B81B3/0056 ,  B81B2201/0221 ,  B81B2203/053

    Abstract: A Micro-Electro-Mechanical Systems (MEMS) device includes a first substrate with a first surface and a second surface, the first substrate including a base layer, a moveable beam disposed on the base layer, at least one metal layer, and one or more standoffs disposed on the base layer such that one or more metal layers are situated on the top surface of the one or more standoffs. The MEMS device further includes a second substrate including one or more metal layers bonded to the one or more standoffs resulting in an electrical connection between at least a portion of the one or more metal layers of the second substrate and one or more of the at least one electrode on the bottom surface and the at least one electrode on the top surface.

    Internal electrical contact for enclosed MEMS devices
    9.
    发明公开
    Internal electrical contact for enclosed MEMS devices 审中-公开
    Interner elektrischer Kontaktfürverkapselte MEMS-Vorrichtungen

    公开(公告)号：EP2762441A2

    公开(公告)日：2014-08-06

    申请号：EP14153050.1

    申请日：2014-01-29

    Applicant: InvenSense, Inc.

    Inventor： Huang, Kegang ,  Shin, Jongwoo ,  Lim, Martin ,  Daneman, Michael Julian ,  Seeger, Joseph

    IPC: B81B7/00

    CPC classification number: B81C1/00301 ,  B81B7/0064 ,  B81B2207/098 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/031

    Abstract: A MEMS device is disclosed. The MEMS device comprises a MEMS substrate. The MEMS substrate includes a first semiconductor layer connected to a second semiconductor layer with a dielectric layer in between. MEMS structures are formed from the second semiconductor layer and include a plurality of first conductive pads. The MEMS device further includes a base substrate which includes a plurality of second conductive pads thereon. The second conductive pads are connected to the first conductive pads. Finally, the MEMS device includes a conductive connector formed through the dielectric layer of the MEMS substrate to provide electrical coupling between the first semiconductor layer and the second semiconductor layer. The base substrate is electrically connected to the second semiconductor layer and the first semiconductor layer.

    Abstract translation: 公开了MEMS器件。 MEMS器件包括MEMS衬底。 MEMS衬底包括连接到第二半导体层的第一半导体层，其间具有介电层。 MEMS结构由第二半导体层形成并且包括多个第一导电焊盘。 MEMS器件还包括在其上包括多个第二导电焊盘的基底基板。 第二导电焊盘连接到第一导电焊盘。 最后，MEMS器件包括通过MEMS衬底的电介质层形成的导电连接器，以提供第一半导体层和第二半导体层之间的电耦合。 基底基板电连接到第二半导体层和第一半导体层。

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