公开(公告)号：AT509300T

公开(公告)日：2011-05-15

申请号：AT06111200

申请日：2006-03-15

Applicant: JSR CORP

Inventor： YOSHIMURA NAKAATSU ,  KONNO KEIJI ,  NATSUME NORIHIRO

IPC: G03F7/09 ,  G03F7/033 ,  G03F7/11 ,  H01L21/027

Abstract: An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R 1 and R 2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.

公开(公告)号：AT540336T

公开(公告)日：2012-01-15

申请号：AT07829596

申请日：2007-10-11

Applicant: JSR CORP

Inventor： NISHIMURA YUKIO ,  SUGIE NORIHIKO ,  NAKASHIMA HIROMITSU ,  NATSUME NORIHIRO ,  KOUNO DAITA

IPC: G03F7/11 ,  H01L21/027

Abstract: A composition for formation of upper layer film, which is used for forming an upper layer film on the surface of a photoresist film and which comprises a resin (A) having a repeating unit represented by the following general formula (1-1) and not having a repeating unit represented by the following general formula (1-2), and a resin (B) having a repeating unit represented by the following general formula (1-2) and not having a repeating unit represented by the following general formula (1-1). [In the general formulas (1-1) and (1-2), R 1 is hydrogen or the like; R 2 is single bonds or the like; and R 3 is a fluorine-substituted, linear or branched alkyl group having 1 to 12 carbon atoms, or the like.] The composition can form an upper layer film giving a sufficiently high receded contact angle.

公开(公告)号：EP2078983A4

公开(公告)日：2010-08-25

申请号：EP07829596

申请日：2007-10-11

Applicant: JSR CORP

Inventor： NISHIMURA YUKIO ,  SUGIE NORIHIKO ,  NAKASHIMA HIROMITSU ,  NATSUME NORIHIRO ,  KOUNO DAITA

IPC: G03F7/11 ,  H01L21/027

CPC classification number: G03F7/11 ,  G03F7/2041

公开(公告)号：JP2011133679A

公开(公告)日：2011-07-07

申请号：JP2009293417

申请日：2009-12-24

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NATSUME NORIHIRO ,  KISHIDA TAKANORI ,  IKUI NORITO ,  YASUDA YOSHITOMO

IPC: G03F7/075 ,  C08G77/04 ,  G03F7/004 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide: a negative radiation-sensitive composition capable of forming a cured pattern having a low relative dielectric constant; a cured pattern forming method using the same; and a cured pattern obtained by the cured pattern forming method.
SOLUTION: The negative radiation-sensitive composition includes (A) a polymer, (B) a radiation-sensitive acid generator, and (C) a solvent. The polymer (A) is a polymer obtained by hydrolysis and condensation of at least one hydrolyzable silane compound selected from (a1) a hydrolyzable silane compound represented by the general formula (1): R
a Si(OR
1 )
4-a and (a2) a hydrolyzable silane compound represented by the general formula (2): Si(OR
2 )
4 . When the total of all units included in the polymer (A) is considered to be 100 mol%, the content of units derived from the compound (1) is 80-100 mol%.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 待解决的问题：提供：能够形成具有低相对介电常数的固化图案的负辐射敏感组合物; 使用其的固化图案形成方法; 以及通过固化图案形成方法获得的固化图案。 解决方案：负辐射敏感性组合物包括（A）聚合物，（B）辐射敏感性酸产生剂和（C）溶剂。 聚合物（A）是通过水解和缩合至少一种选自（a1）由通式（1）表示的可水解硅烷化合物的水解性硅烷化合物得到的聚合物：R（S） （a2）由通式（2）表示的可水解的硅烷化合物：Si（OR SP＆gt; 2＆lt; SP＆gt;）＆lt; / SP＆gt; > 4 。 当聚合物（A）中包含的全部单元的总和被认为是100摩尔％时，衍生自化合物（1）的单元的含量为80-100摩尔％。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010122322A

公开(公告)日：2010-06-03

申请号：JP2008293879

申请日：2008-11-17

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： YASUDA YOSHITOMO ,  IKUI NORITO ,  NATSUME NORIHIRO ,  KISHIDA TAKANORI

IPC: G03F7/075 ,  C08F220/28 ,  C08F230/08 ,  G03F7/038 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative-type radiation-sensitive composition which forms a hardened pattern of low specific dielectric constant, and to provide a pattern-forming method using the same, and a hardened pattern. SOLUTION: The negative-type radiation-sensitive composition contains: (A1) a polymer having a structure unit (I), which is derived from a radically polymerizable compound having an alkylene glycol chain, and a structure unit (II) derived from a radically polymerizable compound having an alkoxysilyl group; (B) a radiation-sensitive acid-generating agent; and (C) a solvent. The method includes; (1) a process in which a film using the composition is formed on the surface of a substrate; (2) a process in which the film thus obtained is subjected to heat processing; (3) a process in which the heated film is exposed to light; (4) a process in which the exposed film is developed to obtain a precursory pattern; and (5) a process in which the precursory pattern thus obtained is hardened to obtain a hardened pattern. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供形成低比介电常数的硬化图案的负型辐射敏感性组合物，并提供使用其的图案形成方法和硬化图案。 解决方案：负型辐射敏感性组合物包含：（A1）具有结构单元（I）的聚合物，其衍生自具有亚烷基二醇链的自由基聚合性化合物和衍生自具有亚烷基二醇链的结构单元（II）） 来自具有烷氧基甲硅烷基的自由基聚合性化合物; （B）辐射敏感的酸产生剂; 和（C）溶剂。 该方法包括： （1）使用该组合物的膜形成在基板的表面上的工序; （2）对这样得到的膜进行热处理的工序; （3）加热的膜暴露于光的过程; （4）曝光膜显影以获得前体图案的方法; 和（5）将由此获得的前体图案硬化以获得硬化图案的工艺。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008209948A

公开(公告)日：2008-09-11

申请号：JP2008118030

申请日：2008-04-30

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NUMATA ATSUSHI ,  SUZUKI AKI ,  HARA HIROMICHI ,  NATSUME NORIHIRO

IPC: G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a negative radiation-sensitive resin composition superior in sensitivity and resolution, showing small optical proximity effect, capable of accurately and stably forming a fine pattern, even in the case of an isolated line pattern, capable of ensuring sufficient focus margin for an isolated line pattern, and useful as a chemically amplified resist.
SOLUTION: The negative radiation-sensitive resin composition comprises (A) a low-molecular compound obtained by substituting at least one hydrogen atom of a compound, having an amino group in which the hydrogen atom bonds to a nitrogen atom by a t-butoxycarbonyl group; (B) a radiation-sensitive acid generator; (D) an alkali-soluble resin comprising a p-hydroxystyrene/styrene copolymer; and (E) a crosslinking agent.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 解决问题：为了提供灵敏度和分辨率优异的负辐射敏感性树脂组合物，显示出小的光学邻近效应，即使在隔离线图案的情况下也能够精确且稳定地形成精细图案，能够 确保隔离线图案的足够的聚焦余量，并且可用作化学放大抗蚀剂。 解决方案：负辐射敏感性树脂组合物包含（A）通过将具有其中氢原子与氮原子键合的氨基的化合物的至少一个氢原子替换为t而获得的低分子化合物 丁氧羰基 （B）辐射敏感酸产生剂; （D）包含对羟基苯乙烯/苯乙烯共聚物的碱溶性树脂; 和（E）交联剂。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008209799A

公开(公告)日：2008-09-11

申请号：JP2007048101

申请日：2007-02-27

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA YUKIO ,  SHIMIZU MAKOTO ,  KONO HIROTA ,  SUGIE NORIHIKO ,  NATSUME NORIHIRO

IPC: G03F7/11 ,  C08F220/04 ,  C08F220/10 ,  C08F228/02 ,  G03F7/039 ,  G03F7/38 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist pattern forming method using a radiation-sensitive resin composition and an upper layer film forming composition each having sufficient transmittance at an exposure wavelength, particularly at 248 nm (KrF) and 193 nm (ArF). SOLUTION: The photoresist pattern forming method includes: forming a photoresist film on a substrate by applying the radiation-sensitive resin composition containing a resin containing >60 mol% of a monomer which becomes alkali-soluble under the action of an acid and a radiation-sensitive acid generator; forming an upper layer film on the photoresist film by applying the upper layer film forming composition containing an alkali-soluble resin containing at least one of specific monomers; and obtaining a resist pattern by disposing a liquid immersion medium between the upper layer film and a lens, irradiating the photoresist film and the upper layer film with exposure light via the liquid immersion medium and a mask having a predetermined pattern, and performing development. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供使用在曝光波长，特别是248nm（KrF）和193nm（ArF）下具有足够透射率的辐射敏感性树脂组合物和上层成膜组合物的光致抗蚀剂图案形成方法 ）。 光致抗蚀剂图案形成方法包括：通过在酸性的作用下涂布含有含有> 60mol％以上成为碱溶性的单体的树脂的辐射敏感性树脂组合物，在基材上形成光致抗蚀剂膜，以及 辐射敏感酸发生器; 通过涂布含有含有至少一种特定单体的碱溶性树脂的上层成膜组合物在光致抗蚀剂膜上形成上层膜; 并且通过在上层膜和透镜之间设置浸液介质，通过液浸介质和具有预定图案的掩模用曝光光照射光致抗蚀剂膜和上层膜并进行显影来获得抗蚀剂图案。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2001215689A

公开(公告)日：2001-08-10

申请号：JP2000028456

申请日：2000-02-04

Applicant: JSR CORP

Inventor： NUMATA ATSUSHI ,  SUZUKI AKI ,  HARA HIROMICHI ,  NATSUME NORIHIRO

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039

Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition excellent in sensitivity and resolution, having a small light proximity effect, capable of accurately and stably forming a fine pattern even in an isolated line pattern, capable of ensuring a sufficient focus margin for the isolated line pattern and useful as a positive type or negative type chemical amplification type resist. SOLUTION: The positive type radiation-sensitive resin composition contains (A) a low molecular compound obtained by preparing a compound having an amino group in which at least one hydrogen atom bonds to a nitrogen atom and substituting the hydrogen atom by a t-butoxycarbonyl group, (B) a radiation- sensitive acid generating agent and (C) (a) an acid dissociable group-containing resin which is made alkali-soluble when the acid dissociable group is dissociated or (b) an alkali-soluble resin and an alkali solubility controlling agent. The negative type radiation-sensitive resin composition contains the component A, the component B, (D) an alkali-soluble resin and (E) a crosslinking agent.

公开(公告)号：JP2013029623A

公开(公告)日：2013-02-07

申请号：JP2011164876

申请日：2011-07-27

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NATSUME NORIHIRO ,  MARUYAMA KEN

IPC: G03F7/039 ,  C07C309/12 ,  C07C381/12 ,  C08F12/22 ,  C09K3/00 ,  G03F7/004

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition which can reduce nano edge roughness and is excellent in depth of focus.SOLUTION: A photoresist composition contains [A] a compound represented by the following formula (1), and [B] a polymer having a structural unit (I) represented by the following formula (2-1).

Abstract translation: 要解决的问题：提供可以降低纳米边缘粗糙度并且具有优异的聚焦深度的光致抗蚀剂组合物。 光致抗蚀剂组合物含有[A]由下式（1）表示的化合物，[B]具有下式（2-1）表示的结构单元（I）的聚合物。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2012194292A

公开(公告)日：2012-10-11

申请号：JP2011057313

申请日：2011-03-15

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NATSUME NORIHIRO ,  HARADA SAKI ,  MARUYAMA KEN ,  NAKANO TAKANORI

IPC: G03F7/004 ,  G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a photoresist composition having excellent nanoedge roughness suppressing properties and a focal depth.SOLUTION: The photoresist composition contains a polymer having a structural unit (I) represented by formula (1-1) and an acid generating agent represented by formula (2). In the formula (2), Ris an organic group having at least one ester bond and is represented by formula (2-1a).

Abstract translation: 要解决的问题：提供具有优异的纳米凹凸粗糙度抑制特性和焦深的光致抗蚀剂组合物。 光致抗蚀剂组合物含有具有由式（1-1）表示的结构单元（I）和由式（2）表示的酸产生剂的聚合物。 在式（2）中，R 1是具有至少一个酯键的有机基团，由式（2-1a）表示。 版权所有（C）2013，JPO＆INPIT