公开(公告)号：DE60217247T2

公开(公告)日：2007-10-04

申请号：DE60217247

申请日：2002-09-25

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  SEKIGUCHI MANABU ,  PATZ MATTHIAS ,  SHIOTA ATSUSHI ,  YAMADA KINJI

IPC: C09D183/04 ,  H01L21/31 ,  B05D3/02 ,  B32B9/04 ,  C08G65/40 ,  C09D165/00 ,  C09D171/00 ,  C09D183/14 ,  H01L21/312

Abstract: A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60 % by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.

公开(公告)号：DE60032997D1

公开(公告)日：2007-03-08

申请号：DE60032997

申请日：2000-11-08

Applicant: JSR CORP

Inventor： AKIIKE TOSHIYUKI ,  PATZ MATTHIAS ,  TAKAHASHI MASAYUKI ,  GOTO KOHEI ,  NISHIKAWA MICHINORI ,  OKADA TAKASHI ,  YAMADA KINJI

IPC: C08G61/02 ,  H01L21/312 ,  C08F38/00 ,  C08G61/00 ,  C08J5/18 ,  C09D165/00

Abstract: A diyne-containing (co)polymer which is soluble in organic solvents, has excellent processability, and gives a cured coating film excellent in heat resistance, solvent resistance, low-dielectric characteristics, and mechanical strength; processes for producing the same; and a cured film. The diyne-containing (co)polymer contains at least 10 mol% repeating units represented by the following formula (1) and has a weight-average molecular weight of from 500 to 1,000,000: wherein Y represents a specific bivalent organic group; Ar represents a bivalent organic group; and n represents 0 or 1.

公开(公告)号：DE60237746D1

公开(公告)日：2010-11-04

申请号：DE60237746

申请日：2002-09-24

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  SEKIGUCHI MANABU ,  PATZ MATTHIAS ,  YOSHIOKA MUTSUHIKO ,  SHIOTA ATSUSHI ,  YAMADA KINJI

IPC: C09D183/06 ,  H01L21/312 ,  C23C18/12

公开(公告)号：DE60032997T2

公开(公告)日：2007-11-08

申请号：DE60032997

申请日：2000-11-08

Applicant: JSR CORP

Inventor： AKIIKE TOSHIYUKI ,  PATZ MATTHIAS ,  TAKAHASHI MASAYUKI ,  GOTO KOHEI ,  NISHIKAWA MICHINORI ,  OKADA TAKASHI ,  YAMADA KINJI

IPC: C08G61/02 ,  H01L21/312 ,  C08F38/00 ,  C08G61/00 ,  C08J5/18 ,  C09D165/00

Abstract: A diyne-containing (co)polymer which is soluble in organic solvents, has excellent processability, and gives a cured coating film excellent in heat resistance, solvent resistance, low-dielectric characteristics, and mechanical strength; processes for producing the same; and a cured film. The diyne-containing (co)polymer contains at least 10 mol% repeating units represented by the following formula (1) and has a weight-average molecular weight of from 500 to 1,000,000: wherein Y represents a specific bivalent organic group; Ar represents a bivalent organic group; and n represents 0 or 1.

公开(公告)号：DE60217247D1

公开(公告)日：2007-02-15

申请号：DE60217247

申请日：2002-09-25

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  SEKIGUCHI MANABU ,  PATZ MATTHIAS ,  SHIOTA ATSUSHI ,  YAMADA KINJI

IPC: C09D183/04 ,  H01L21/31 ,  B05D3/02 ,  B32B9/04 ,  C08G65/40 ,  C09D165/00 ,  C09D171/00 ,  C09D183/14 ,  H01L21/312

Abstract: A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60 % by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.

公开(公告)号：JP2003115485A

公开(公告)日：2003-04-18

申请号：JP2001307909

申请日：2001-10-03

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  PATZ MATTHIAS ,  SEKIGUCHI MANABU ,  SHIODA ATSUSHI ,  YAMADA KINJI

IPC: B32B27/00 ,  C09D183/02 ,  C09D183/04 ,  C09D183/14 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To provide a laminating film, in more detail, a laminating film for semiconductors which is superior in adhesion to a coating film formed by the CVD method for semiconductor elements, etc. SOLUTION: The film forming method comprises a step for (A) processing a substrate by at least one process selected from among the UV irradiation process, oxygen plasma process, nitrogen plasma process, helium plasma process, argon plasma process, hydrogen plasma process, and ammonia plasma process, and a step for (B) coating and heating it with a film forming composition containing polysiloxane and an organic solvent.

公开(公告)号：JP2002308984A

公开(公告)日：2002-10-23

申请号：JP2001115284

申请日：2001-04-13

Applicant: JSR CORP

Inventor： PATZ MATTHIAS ,  SAKAKIBARA MITSUHIKO

IPC: H01L51/50 ,  C08G65/22 ,  H01B1/12 ,  H05B33/14 ,  H05B33/22

Abstract: PROBLEM TO BE SOLVED: To obtain a novel polymer showing excellent solubility to a solvent, capable of easily forming a thin film and useful for an electronic material and other resin materials, to provide its manufacturing method and to obtain an electric charge transfer material containing the polymer. SOLUTION: The novel polymer has a structure unit represented by formula (1) or has a structure unit represented by formula (1) and a structure unit represented by formula (2) (wherein, in formula (1), R and R are each independently an alkyl group, an aryl group, a monophenylamino group or a diphenylamino group; (m) is an integer of 0 to 2; and (n) is an integer of 0 to 3; and in formula (2), R and R are each independently hydrogen atom, an alkyl group, an aryl group, a monophenylamino group or a disphenylamino group; and (p) is an integer of 0 to 3).

公开(公告)号：JP2000273171A

公开(公告)日：2000-10-03

申请号：JP8354799

申请日：1999-03-26

Applicant: JSR CORP

Inventor： PATZ MATTHIAS ,  TAKAHASHI MASAYUKI ,  GOTO KOHEI

IPC: C08G73/08

Abstract: PROBLEM TO BE SOLVED: To obtain an oxadiazole derivative polymer by the condensation reaction of starting materials at a low temperature for a short time by condensing a dicarboxylic acid (A) with a compound (B) selected from a dicarboxylic acid dihydrazide and hydrazinium sulfate in the presence of phosphorus pentoxide, a sulfonic acid, and an sulfonic anhydride. SOLUTION: It is desirable that component A is an aromatic dicarboxylic acid, and component B is an aromatic dicarboxylic dihydrazide. It is desirable that the sulfonic acid is methanesulfonic acid, and the sulfonic acid anhydride is methanesulfonic anhydride. It is desirable that the condensation reaction of component A with component B is performed at 50-130 deg.C for 1-48 hr. The sulfonic acid anhydride is used in an amount of 10-150 pts.wt. per 100 pts.wt. sulfonic acid. To attain a high condensation reaction efficiency, it is desirable to use the sulfonic acid in an amount of 300-3,000 pts.wt. per 100 pts.wt. phosphorus pentoxide.

公开(公告)号：JP2003110018A

公开(公告)日：2003-04-11

申请号：JP2001303199

申请日：2001-09-28

Applicant: JSR CORP

Inventor： SHIODA ATSUSHI ,  PATZ MATTHIAS ,  SEKIGUCHI MANABU

IPC: H01L21/768 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To solve the problem in generation of peeling and crack which are generated in the CMP process to form damascene and in the heat cycle, by eliminating mismatch of dynamics characteristic among inorganic system insulation films used for copper diffusion preventing layer, wiring layer and via layer. SOLUTION: In this method of fabricating a copper damascene structure, an organic insulation film in the thickness of 1 to 100 nm is provided between an inorganic system insulation film and copper diffusion preventing layer, at the time of chemically and mechanically grinding the inorganic system insulation film formed on the copper diffusion preventing layer.

公开(公告)号：JP2000273091A

公开(公告)日：2000-10-03

申请号：JP7918399

申请日：1999-03-24

Applicant: JSR CORP

Inventor： PATZ MATTHIAS ,  TAKAHASHI MASAYUKI ,  GOTO KOHEI

IPC: C07D271/10 ,  C08F12/32

Abstract: PROBLEM TO BE SOLVED: To provide a method for easily producing an oxadiazole derivative having 4-vinylphenyl group at high yield. SOLUTION: When producing an oxadiazole derivative having 4-vinylphenyl group, an oxadiazole derivative having 4-(2-bromoethyl)phenyl group or 4-(2- chloroethyl)phenyl one is employed as a precursor. The precursor is preferably a compound expressed by the formula [wherein, R1 is a (substituted) phenyl group, naphthyl group or anthranil group; R2 is chlorine atom or bromine atom; and R1 is especially preferably naphthyl group]. By making a base act on the precursor to perform the dehydrohalogenation reaction of the 4-(2-bromoethyl) phenyl group or 4-(2-chloroethyl)phenyl one of the precursor, an oxadiazole derivative having 4-vinylphenyl group is produced.