Abstract:
Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R aSi(OR )4-a wherein R represents a hydrogen atom, a fluorine atom or a univalent organic group, R represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c wherein R , R , R and R , which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R represents an oxygen atom or -(CH2)n-, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.
Abstract:
Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R aSi(OR )4-a wherein R represents a hydrogen atom, a fluorine atom or a univalent organic group, R represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c wherein R , R , R and R , which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R represents an oxygen atom or -(CH2)n-, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.
Abstract:
PROBLEM TO BE SOLVED: To provide a photosensitive resin composition suitably used for a surface protective film, an interlayer insulating film, and an insulating film for high-density mounting board, which has high solubility to general solvents and satisfactory sensitivity to g-ray and h-ray, can respond to highly thick application and alkali development, form a pattern of high resolution, and provide a cured product with high film remaining rate. SOLUTION: The photosensitive resin composition comprises (A) a polyimide resin, (B) a photosensitive acid generator containing a compound represented by the general formula (1), wherein R1 represents hydrogen atom, a 1-4C alkyl group or a 1-4C alkoxyl group, X represents halogen atom, Y represents oxygen atom or sulfur atom; and (C) a crosslinking agent. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a resin composition coated in thick films with good in-plane uniformity in coating and alkali developed and giving cured products having high resolution and suitable for uses as surface protection films, interlayer insulating films and insulating films for high-density mounting boards. SOLUTION: The resin composition comprises (A) an OH-containing polyimide polymer comprising a repeating unit expressed by general formula (1) and a repeating unit expressed by general formula (2) and (B) a solvent containing a specific solvent such as propylene glycol monoalkyl monoether or the like. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain a composition for a resist underlayer film disposed between a resist and an antireflection film, having both of adhesion to the resist and resistance to a resist developing solution, and further having resistance to oxygen ashing in resist removal. SOLUTION: The composition for a resist underlayer film comprises: (A) both or either of a hydrolysate and a condensate of a silane compound; (B) a compound generating an acid by ultraviolet irradiation and/or heating (e.g., bis(4-t-butylphenyl)iodonium camphorsulfonate); and (C) a catalyst (e.g., maleic acid). The silane compound is at least one compound selected from the group consisting of tetramethoxysilane, tetraethoxysilane, tetra-n-propoxysilane, tetra-iso-propoxysilane and tetraphenoxysilane. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition which gives a good pattern profile, excels in focal depth, and is used for liquid immersion lithography by which irradiation with a radiation is carried out through a liquid for liquid immersion lithography having a higher refractive index than air at a wavelength of 193 nm, and in which materials elute in a small amount into the liquid for liquid immersion lithography such as water with which the composition contacts in liquid immersion lithography. SOLUTION: The radiation-sensitive resin composition is used for a resist pattern forming method including liquid immersion lithography by which irradiation with a radiation is carried out through a liquid for liquid immersion lithography between a lens and a photoresist film, and contains a resin (A) and at least one radiation-sensitive acid generator (B) represented by formulae (1) and (2), wherein R 1 is H; R 2 is alkoxyl; X is butylene; and each R 4 and R 5 are fluoroalkyl. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To obtain a strippable film-forming composition that gives a cured film easily removable e.g. with an alkali solution and is useful e.g. for protective coat to be obtained through heating coating film applied to a substrate by including a metal alkoxide and a polymer compound having at least one carboxylic group or the like. SOLUTION: This composition comprises (A) a metal alkoxide such as an aluminum alkoxide (e.g. aluminum butoxide, etc.), and (B) a polymer compound (e.g. a polyacrylate, a polyester, a polyamide, etc.), having at least one carboxylic group and/or acid anhydride group which has an acid value of 60-200 mg/g. The content ratio of the ingredient A to the ingredient B preferably is (10:90) to (70:30). The ingredient B preferably is a copolymer obtained by copolymerizing a carboxylic acid and/or its anhydride with a comonomer except a carboxylic acid and/or its anhydride.
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition excellent in roughness, etching resistance, sensitivity and resolution and capable of stably forming a fine pattern with a high degree of accuracy. SOLUTION: The radiation sensitive resin composition contains a radiation sensitive acid generator such as 2,4,6-trimethylphenyldiphenylsulfonium 2,4- difluorobenzenesulfonate or bis(4-t-butylphenyl)iodonium 2,4- difluorobenzenesulfonate, an alkali-insoluble or slightly alkali-soluble resin having units obtained by cleaving the polymerizable unsaturated bonds of o- hydroxystyrene, m-hydroxystyrene or the like and a compound prepared by substituting a monovalent acid dissociable group for the hydrogen atom of the hydroxy group of the above compound and a dissolution accelerator having a unit obtained by cleaving the polymerizable unsaturated bond of o- hydroxystyrene, m-hydroxystyrene or the like.
Abstract:
PROBLEM TO BE SOLVED: To obtain a composition for an underlayer film of a resist excellent in adhesion to the resist and resistance to a developing solution and less liable to reduce film thickness in the oxygen ashing of the resist. SOLUTION: The composition contains (A) a hydrolyzate and/or a condensation product of a compound of the formula R1aSi(OR2)4-a [where R1 is H, F or a monovalent organic group, R2 is a monovalent organic group and (a) is 0-2] or the formula R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c [where R3-R6 are each a monovalent organic group, (b) and (c) are each 0-2, R7 is 0 or -(CH2)n-, (d) is 0 or 1 and (n) is 1-6], (B) a solvent of the formula R8O(CHCH3CH2O)cR9 [where R8 and R9 are each H, 1-4C alkyl or CH3CO- and (e) is 1-2] and (C) a compound which generates an acid when irradiated with light and/or heated.
Abstract:
PROBLEM TO BE SOLVED: To obtain a composition for an underlayer film of resist having both adhesiveness to a resist and resistance to a resist developer and further having resistance to oxygen ashing when the resist is removed by incorporating a hydrolysate of a specific compound and its condensate or any of them and at least one of other specific compounds in the composition. SOLUTION: A hydrolysate of compound shown by the formula R1aSi(OR2)4-a and its condensate or any of them and at least one of the compound shown by the formula R23SiQ are incorporated in this composition. In the formulae, R1 is hydrogen atom or fluorine atom or a univalent organic group; R2 is a univalent organic group; (a) is an integer of 0-2; Q is any one selected from the group consisting of a chlorine atom, -OR3, -OSiR33, -NHSiR33, -NHCONHSiR33 and -OC(CH3)=NSiR33 (wherein R3 is a univalent organic group).