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    1.
    发明专利
    未知

    公开(公告)号：DE60026635D1

    公开(公告)日：2006-05-11

    申请号：DE60026635

    申请日：2000-04-11

    Applicant: JSR CORP

    Inventor： SUGITA HIKARU ,  SAITO AKIO ,  YAMADA KINJI ,  NISHIKAWA MICHINORI ,  OHTA YOSHIHISA ,  YUUMOTO YOSHIJI

    IPC: G03F7/09 ,  H01L21/027 ,  C08K5/54 ,  C08L83/04 ,  C08L83/14 ,  G03F7/075 ,  G03F7/11

    Abstract: Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R aSi(OR )4-a wherein R represents a hydrogen atom, a fluorine atom or a univalent organic group, R represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c wherein R , R , R and R , which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R represents an oxygen atom or -(CH2)n-, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.

    2.
    发明专利
    未知

    公开(公告)号：DE60323577D1

    公开(公告)日：2008-10-30

    申请号：DE60323577

    申请日：2003-07-30

    Applicant: JSR CORP

    Inventor： SUGITA HIKARU ,  KONNO KEIJI ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

    IPC: C07C33/38 ,  C07C69/608 ,  C07C69/00 ,  C08F232/08 ,  G03F7/09

    Abstract: Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed. A polymer prepared from these novel compounds containing a structural unit of the formula (3), wherein R is a hydrogen atom and R and R individually represent a monovalent atom or a monovalent organic group is also disclosed. The polymer is suitable as a component for an antireflection film-forming composition exhibiting a high antireflection effect and not causing intermixing with a resist film.

    3.
    发明专利
    未知

    公开(公告)号：DE60026635T2

    公开(公告)日：2006-10-05

    申请号：DE60026635

    申请日：2000-04-11

    Applicant: JSR CORP

    Inventor： SUGITA HIKARU ,  SAITO AKIO ,  YAMADA KINJI ,  NISHIKAWA MICHINORI ,  OHTA YOSHIHISA ,  YUUMOTO YOSHIJI

    IPC: G03F7/09 ,  H01L21/027 ,  C08K5/54 ,  C08L83/04 ,  C08L83/14 ,  G03F7/075 ,  G03F7/11

    Abstract: Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R aSi(OR )4-a wherein R represents a hydrogen atom, a fluorine atom or a univalent organic group, R represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c wherein R , R , R and R , which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R represents an oxygen atom or -(CH2)n-, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.

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