公开(公告)号：WO2019136015A1

公开(公告)日：2019-07-11

申请号：PCT/US2018/068093

申请日：2018-12-31

Applicant: KLA-TENCOR CORPORATION

Inventor： PANDEV, Stilian ,  KUZNETSOV, Alexander

IPC: H01L21/66 ,  G01N23/2251

Abstract: In some embodiments, a first plurality of electron-microscope images for respective instances of a semiconductor structure is obtained from a first source. The electron-microscope images of the first plurality show different values of one or more semiconductor-fabrication parameters. A model is trained that specifies a relationship between the first plurality of electron-microscope images and the values of the one or more semiconductor-fabrication parameters. A second plurality of electron-microscope images for respective instances of the semiconductor structure on one or more semiconductor wafers is collected. The one or more semiconductor wafers are distinct from the first source. Values of the one or more semiconductor-fabrication parameters for the second plurality of electron-microscope images are predicted using the model.

公开(公告)号：WO2018209134A1

公开(公告)日：2018-11-15

申请号：PCT/US2018/032141

申请日：2018-05-10

Applicant: KLA-TENCOR CORPORATION

Inventor： BYKANOV, Alexander ,  ARTEMIEV, Nikolay ,  DI REGOLO, Joseph A. ,  GELLINEAU, Antonio ,  KUZNETSOV, Alexander ,  VELDMAN, Andrei ,  HENCH, John

IPC: G01N23/223 ,  G01N23/2204

Abstract: Methods and systems for positioning a specimen and characterizing an x-ray beam incident onto the specimen in a Transmission, Small-Angle X-ray Scatterometry (T-SAXS) metrology system are described herein. A specimen positioning system locates a wafer vertically and actively positions the wafer in six degrees of freedom with respect to the x-ray illumination beam without attenuating the transmitted radiation. In some embodiments, a cylindrically shaped occlusion element is scanned across the illumination beam while the detected intensity of the transmitted flux is measured to precisely locate the beam center. In some other embodiments, a periodic calibration target is employed to precisely locate the beam center. The periodic calibration target includes one or more spatially defined zones having different periodic structures that diffract X-ray illumination light into distinct, measurable diffraction patterns.

公开(公告)号：WO2018075808A1

公开(公告)日：2018-04-26

申请号：PCT/US2017/057461

申请日：2017-10-19

Applicant: KLA-TENCOR CORPORATION

Inventor： CHEN, Boxue ,  VELDMAN, Andrei ,  KUZNETSOV, Alexander ,  SHCHEGROV, Andrei

IPC: G01N21/95 ,  G01N21/88

Abstract: Methods and systems for evaluating the geometric characteristics of patterned structures are presented. More specifically, geometric structures generated by one or multiple patterning processes are measured by two or more metrology systems in accordance with a hybrid metrology methodology. A measurement result from one metrology system is communicated to at least one other metrology systems to increase the measurement performance of the receiving system. Similarly, a measurement result from the receiving metrology system is communicated back to the sending metrology system to increase the measurement performance of the sending system. In this manner, measurement results obtained from each metrology system are improved based on measurement results received from other cooperating metrology systems. In some examples, metrology capability is expanded to measure parameters of interest that were previously unmeasurable by each metrology system operating independently. In other examples, measurement sensitivity is improved and parameter correlation is reduced.

Abstract translation: 介绍了用于评估图案化结构的几何特征的方法和系统。 更具体地说，由一个或多个图案化工艺产生的几何结构根据混合计量学方法由两个或更多个计量系统测量。 将来自一个计量系统的测量结果传送给至少一个其他计量系统以增加接收系统的测量性能。 类似地，来自接收计量系统的测量结果被传送回发送计量系统以增加发送系统的测量性能。 以这种方式，基于从其他合作计量系统接收到的测量结果，从每个计量系统获得的测量结果得到改进。 在一些示例中，计量能力被扩展以测量先前由独立运行的每个计量系统不可测量的感兴趣参数。 在其他例子中，测量灵敏度得到改善，参数相关性降低。

公开(公告)号：WO2019178424A1

公开(公告)日：2019-09-19

申请号：PCT/US2019/022370

申请日：2019-03-14

Applicant: KLA-TENCOR CORPORATION

Inventor： CHOUAIB, Houssam ,  KUZNETSOV, Alexander

IPC: H01L21/67 ,  H01L21/66

Abstract: Methods and systems for generating measurement models of nanowire based semiconductor structures based on re-useable, parametric models are presented herein. Metrology systems employing these models are configured to measure structural and material characteristics (e.g., material composition, dimensional characteristics of structures and films, etc.) associated with nanowire semiconductor fabrication processes. The re-useable, parametric models of nanowire based semiconductor structures enable measurement model generation that is substantially simpler, less error prone, and more accurate. As a result, time to useful measurement results is significantly reduced, particularly when modelling complex, nanowire based structures. The re-useable, parametric models of nanowire based semiconductor structures are useful for generating measurement models for both optical metrology and x-ray metrology, including soft x-ray metrology and hard x-ray metrology.

公开(公告)号：WO2017176637A1

公开(公告)日：2017-10-12

申请号：PCT/US2017/025757

申请日：2017-04-03

Applicant: KLA-TENCOR CORPORATION

Inventor： KUZNETSOV, Alexander ,  GELLINEAU, Antonio Arion ,  SHCHEGROV, Andrei

IPC: H01L21/66

Abstract: Methods and systems for measuring process induced errors in a multiple patterning semiconductor fabrication process based on measurements of a specimen and process information from one or more previous process steps employed to fabricate the specimen are presented herein. A metrology tool is employed after a number of process steps have been executed. The metrology tool measures structural parameters of interest of metrology targets on the wafer based on measured signals and process information, and communicates correctable process parameter values to one or more process tools involved in the previous process steps. When executed by the appropriate process tool, the correctable process parameter values reduce process induced errors in the geometry of the structures fabricated by the process flow. In another aspect, multiple metrology tools are used to control a fabrication process in combination with process information from one or more process steps in the process flow.

Abstract translation: 本文给出了用于基于样本的测量和来自用于制造样本的一个或多个先前处理步骤的处理信息来测量多重图案化半导体制造处理中的处理引起的错误的方法和系统。 在执行多个处理步骤之后采用测量工具。 计量工具基于测量的信号和过程信息测量晶片上计量目标的感兴趣的结构参数，并且将可校正的过程参数值传送给涉及先前过程步骤的一个或多个过程工具。 当由适当的工艺工具执行时，可校正的工艺参数值减少由工艺流程制造的结构的几何形状中的工艺引起的误差。 另一方面，多个测量工具被用于结合来自工艺流程中的一个或多个工艺步骤的工艺信息来控制制造工艺。

公开(公告)号：WO2014189853A1

公开(公告)日：2014-11-27

申请号：PCT/US2014/038643

申请日：2014-05-19

Applicant: KLA-TENCOR CORPORATION

Inventor： VELDMAN, Andrei ,  SHCHEGROV, Andrei V. ,  BRADY, Gregory ,  DZIURA, Thaddeus Gerard ,  PANDEV, Stilian ,  KUZNETSOV, Alexander

IPC: H01L21/66

CPC classification number: G01N21/211 ,  G01B11/0625 ,  G01B11/0641 ,  G01B2210/56 ,  G01N21/9501 ,  G01N2021/213

Abstract: Methods and systems for evaluating the capability of a measurement system to track measurement parameters through a given process window are presented herein. Performance evaluations include random perturbations, systematic perturbations, or both to effectively characterize the impact of model errors, metrology system imperfections, and calibration errors, among others. In some examples, metrology target parameters are pre-determined as part of a Design of Experiments (DOE). Estimated values of the metrology target parameters are compared to the known DOE parameter values to determine the tracking capability of the particular measurement. In some examples, the measurement model is parameterized by principal components to reduce the number of degrees of freedom of the measurement model. In addition, exemplary methods and systems for optimizing the measurement capability of semiconductor metrology systems for metrology applications subject to process variations are presented.

Abstract translation: 本文介绍了用于评估测量系统通过给定过程窗口跟踪测量参数的能力的方法和系统。 性能评估包括随机扰动，系统扰动或两者，以有效表征模型误差，计量系统缺陷和校准误差等的影响。 在一些示例中，度量目标参数作为实验设计（DOE）的一部分被预先确定。 将度量目标参数的估计值与已知的DOE参数值进行比较，以确定特定测量的跟踪能力。 在一些示例中，测量模型由主要组件参数化，以减少测量模型的自由度。 此外，提出了用于优化用于受过程变化的度量应用的半导体测量系统的测量能力的示例性方法和系统。

公开(公告)号：WO2019113395A1

公开(公告)日：2019-06-13

申请号：PCT/US2018/064369

申请日：2018-12-07

Applicant: KLA-TENCOR CORPORATION

Inventor： NGUYEN, Manh ,  ATKINS, Phillip ,  KUZNETSOV, Alexander ,  LEE, Lie-Quan Rich ,  MALKOVA, Natalia ,  AOYAGI, Paul ,  SUSHCHIK, Mikhail ,  CHOUAIB, Houssam ,  HU, Dawei

IPC: H01L21/66

Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.

公开(公告)号：WO2015172027A1

公开(公告)日：2015-11-12

申请号：PCT/US2015/029896

申请日：2015-05-08

Applicant: KLA-TENCOR CORPORATION

Inventor： SHCHEGROV, Andrei V. ,  PANDEV, Stilian Ivanov ,  MADSEN, Jonathan M. ,  KUZNETSOV, Alexander ,  MIEHER, Walter Dean

IPC: H01L21/66

CPC classification number: G01N21/9501 ,  G01B11/27 ,  G06N99/005

Abstract: Methods and systems for creating a measurement model based only on measured training data are presented. The trained measurement model is then used to calculate overlay values directly from measured scatterometry data. The measurement models receive scatterometry signals directly as input and provide overlay values as output. In some embodiments, overlay error is determined from measurements of design rule structures. In some other embodiments, overlay error is determined from measurements of specialized target structures. In a further aspect, the measurement model is trained and employed to measure additional parameters of interest, in addition to overlay, based on the same or different metrology targets. In some embodiments, measurement data from multiple targets, measurement data collected by multiple metrologies, or both, is used for model building, training, and measurement. In some embodiments, an optimization algorithm automates the measurement model building and training process.

Abstract translation: 提出了仅基于测量训练数据创建测量模型的方法和系统。 然后使用经过训练的测量模型直接从测量的散射测量数据计算覆盖值。 测量模型直接接收散射信号作为输入，并提供重叠值作为输出。 在一些实施例中，根据设计规则结构的测量确定覆盖误差。 在一些其它实施例中，通过专门的目标结构的测量来确定覆盖误差。 在另一方面，测量模型被训练并用于基于相同或不同的度量目标来测量除叠加之外的附加参数。 在一些实施例中，来自多个目标的测量数据，由多个计量学收集的测量数据或两者都用于建模，训练和测量。 在一些实施例中，优化算法使测量模型构建和训练过程自动化。

公开(公告)号：WO2014066679A1

公开(公告)日：2014-05-01

申请号：PCT/US2013/066677

申请日：2013-10-24

Applicant: KLA-TENCOR CORPORATION

Inventor： DZIURA, Thaddeus Gerard ,  LIU, Xuefeng ,  WANG, David Y ,  MADSEN, Jon ,  KUZNETSOV, Alexander ,  DE VEER, Johannes D. ,  KRISHNAN, Shankar ,  SHAUGHNESSY, Derrick ,  SHCHEGROV, Andrei

IPC: G01N21/17 ,  G01B11/24 ,  H01L21/66

CPC classification number: G01N21/47 ,  G01B2210/56 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Various metrology systems and methods for high aspect ratio and large lateral dimension structures are provided. One method includes directing light to one or more structures formed on a wafer. The light includes ultraviolet light, visible light, and infrared light. The one or more structures include at least one high aspect ratio structure or at least one large lateral dimension structure. The method also includes generating output responsive to light from the one or more structures due to the light directed to the one or more structures. In addition, the method includes determining one or more characteristics of the one or more structures using the output.

Abstract translation: 提供了用于高纵横比和大横向尺寸结构的各种计量系统和方法。 一种方法包括将光引导到在晶片上形成的一个或多个结构。 该光包括紫外光，可见光和红外光。 一个或多个结构包括至少一个高纵横比结构或至少一个大的横向尺寸结构。 该方法还包括响应于来自一个或多个结构的光而产生输出，这是由于指向一个或多个结构的光。 另外，该方法包括使用该输出来确定一个或多个结构的一个或多个特性。

公开(公告)号：WO2019191335A1

公开(公告)日：2019-10-03

申请号：PCT/US2019/024437

申请日：2019-03-27

Applicant: KLA-TENCOR CORPORATION

Inventor： ARTEMIEV, Nikolay ,  GELLINEAU, Antonio ,  BYKANOV, Alexander ,  KUZNETSOV, Alexander

IPC: G01N23/201 ,  G01N23/205 ,  G01N23/207 ,  G01B15/02 ,  H01L21/67 ,  H01L21/68

Abstract: Multilayer targets enabling fast and accurate, absolute calibration and alignment of X-ray based measurement systems are described herein. The multilayer calibration targets have very high diffraction efficiency and are manufactured using fast, low cost production techniques. Each target includes a multilayer structure built up with pairs of X-ray transparent and X-ray absorbing materials. The layers of the multilayer target structure is oriented parallel to an incident X-ray beam. Measured diffraction patterns indicate misalignment in position and orientation between the incident X-Ray beam and the multilayer target. In another aspect, a composite multilayer target includes at least two multilayer structures arranged adjacent one another along a direction aligned with the incident X-ray beam, adjacent one another along a direction perpendicular to the incident X-ray beam, or a combination thereof. In some embodiments, the multilayer structures are spatially separated from one another by a gap distance.