公开(公告)号：JP2011155302A

公开(公告)日：2011-08-11

申请号：JP2011103027

申请日：2011-05-02

Applicant: Kla-Tencor Corp ,  ケーエルエー−テンカー コーポレイション

Inventor： MIEHER WALTER D ,  LEVY ADY ,  GOLOVANEVSKY BORIS ,  FRIEDMANN MICHAEL ,  SMITH IAN ,  ADEL MICHAEL ,  FABRIKANT ANATOLY ,  BEVIS CHRISTOPHER F ,  FIELDEN JOHN ,  BAREKET NOAH ,  GROSS KENNETH P ,  ZALICKI PIOTR ,  WACK DAN ,  DECECCO PAOLA ,  GHINOVKER MARK ,  MOSHE BARUCH ,  KNOLL NOAM

IPC: H01L21/027 ,  G03F7/20 ,  G03F9/00

CPC classification number: G03F9/7088 ,  G01N21/956 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7049 ,  G03F9/7084

Abstract: PROBLEM TO BE SOLVED: To provide a method of determining an overlay error between two layers of a multiple layer sample. SOLUTION: For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error between the first and second structures is determined by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets. The optical system includes any one or more of a reflectometric system, polarimetric system, imaging system, interferometric system and/or scan angle system. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种确定多层样品的两层之间的覆盖误差的方法。 解决方案：对于每个具有由第一层形成的第一结构和由第二层样品形成的第二结构的多个周期性目标，采用光学系统，从而测量来自每个 定期目标。 在第一和第二结构之间有预定义的偏移。 通过使用基于预定义的偏移的散射测量覆盖技术来分析来自周期性目标的所测量的光信号来确定第一和第二结构之间的重叠误差。 光学系统包括反射测量系统，偏振系统，成像系统，干涉系统和/或扫描角度系统中的任何一个或多个。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：WO03054475A2

公开(公告)日：2003-07-03

申请号：PCT/US0241151

申请日：2002-12-19

Applicant: KLA TENCOR CORP

Inventor： SHCHEGROV ANDREI V ,  FABRIKANT ANATOLY ,  NIKOONAHAD MEHRDAD ,  LEVY ADY ,  WACK DANIEL C ,  BAREKET NOAH ,  MIEHER WALTER ,  DZIURA TED

IPC: G01N21/21 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F7/20 ,  G01B11/06 ,  G01B11/24 ,  G01B11/30 ,  H01L21/66

CPC classification number: G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

Abstract translation: 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

公开(公告)号：AU2002360738A1

公开(公告)日：2003-07-09

申请号：AU2002360738

申请日：2002-12-19

Applicant: KLA TENCOR CORP

Inventor： BAREKET NOAH ,  MIEHER WALTER ,  DZIURA TED ,  SHCHEGROV ANDREI V ,  FABRIKANT ANATOLY ,  NIKOONAHAD MEHRDAD ,  LEVY ADY ,  WACK DANIEL C

IPC: G01N21/21 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F7/20 ,  G01B11/06 ,  G01B11/24 ,  G01B11/30 ,  H01L21/66

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

公开(公告)号：WO2008077048A3

公开(公告)日：2008-12-04

申请号：PCT/US2007087953

申请日：2007-12-18

Applicant: KLA TENCOR CORP ,  ZYWNO MAREK ,  BAREKET NOAH

Inventor： ZYWNO MAREK ,  BAREKET NOAH

IPC: G03F7/20 ,  F16C39/06 ,  G01N21/95 ,  H01L21/68

CPC classification number: G03F7/70775 ,  F16C32/044 ,  G01N21/9501 ,  G03F7/704 ,  G03F7/70733 ,  G03F7/70816 ,  H01L21/67265 ,  H01L21/68714 ,  H01L21/68771

Abstract: Substrate processing methods and apparatus are disclosed. In some embodiments a substrate processing apparatus may comprise a support structure and a moveable stage including first and second stages. The moveable stage has one or more maglev units attached to the first stage and/or second stage proximate an edge of the first stage. The first stage retains one or more substrates and moves with respect to a first axis that is substantially fixed with respect to the second stage. The second stage translates along a second axis with respect to the support structure. In other embodiments, a primary motor may maintain a rotary stage at an angular speed and/or accelerate or decelerate the stage from a first angular speed to a second angular speed. A secondary motor may accelerate the stage from rest to the first angular speed and/or decelerate the stage from a non-zero angular speed.

Abstract translation: 公开了基板处理方法和装置。 在一些实施例中，衬底处理设备可以包括支撑结构和包括第一和第二阶段的可移动台。 可移动台具有一个或多个磁悬浮单元附接到靠近第一级边缘的第一级和/或第二级。 第一阶段保持一个或多个基板并相对于相对于第二阶段基本固定的第一轴线移动。 第二级相对于支撑结构沿着第二轴平移。 在其他实施例中，主电动机可以以角速度保持旋转台并且/或者将平台从第一角速度加速或减速到第二角速度。 辅助马达可以将载物台从休止加速到第一角速度和/或使载物台从非零角速度减速。

公开(公告)号：WO2011056318A3

公开(公告)日：2011-07-14

申请号：PCT/US2010050045

申请日：2010-09-23

Applicant: KLA TENCOR CORP ,  UMMETHALA UPENDRA ,  BAREKET NOAH ,  BEVIS CHRISTOPHER

Inventor： UMMETHALA UPENDRA ,  BAREKET NOAH ,  BEVIS CHRISTOPHER

IPC: G01B11/00 ,  H01L21/66

CPC classification number: G01B11/0691 ,  B82Y10/00 ,  B82Y40/00 ,  G01P3/806 ,  H01J37/3174

Abstract: One embodiment relates to a method in which a measuring apparatus is used to collect a first set of wave form data which depends on micro-structure of a moving surface. A correspondence is identified between the first set of wave form data and actual position data. Calibrated wave form data is stored which indicates said correspondence between the first set of wave form data and actual position data. In addition, the measuring apparatus may be used to collect a second set of wave form data which depends on micro-structure of the moving surface, a cross-correlation may be computed between the second set of wave form data and the calibrated wave form data. Another embodiment relates to an apparatus for measuring position and/or motion using surface micro-structure of a moving surface. Another embodiment relates to method for measuring motion using surface micro-structure. Other embodiments and features are also disclosed.

Abstract translation: 一个实施例涉及一种方法，其中使用测量装置来收集取决于移动表面的微观结构的第一组波形数据。 在第一组波形数据和实际位置数据之间识别对应关系。 存储表示第一组波形数据与实际位置数据之间的对应关系的校准波形数据。 此外，测量装置可以用于收集取决于运动表面的微观结构的第二组波形数据，可以在第二组波形数据和校准波形数据之间计算互相关 。 另一个实施例涉及使用移动表面的表面微结构测量位置和/或运动的装置。 另一实施例涉及使用表面微结构测量运动的方法。 还公开了其它实施例和特征。