公开(公告)号：JP2011141288A

公开(公告)日：2011-07-21

申请号：JP2011055357

申请日：2011-03-14

Applicant: Kla-Tencor Corp ,  ケーエルエー−テンカー コーポレイション

Inventor： LEE SHING ,  WANG HAIMING ,  NORTON ADAM ,  NIKOONAHAD MEHRDAD

IPC: G01B11/06 ,  G01N21/21 ,  G01J3/447 ,  G01J4/02 ,  G01J4/04 ,  G01N21/27 ,  G01N21/41

CPC classification number: G01J4/02 ,  G01J3/447 ,  G01N21/21

Abstract: PROBLEM TO BE SOLVED: To provide a system which relates to a non-destructive technology for measuring a surface parameter of a sample for measuring the birefringence of a surface, a film thickness, etc. using a polarimetric spectrum. SOLUTION: A polarized sample beam 46 of broadband radiation is focused to the surface of a sample 3 and the radiation polarized by the sample is collected by a mirror system in different planes of incidence. The modulated radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Thickness and refractive information may then be derived from the spectrum. The polarization of the sample beam is altered by the focusing and the sample, and the collection of the modulated radiation is repeated employing two different apertures 28 to detect the presence or absence of a birefringence axis in the sample. In the other preferred embodiment, the technology may be combined with ellipsometry for determining the thicknesses and refractive indices of thin films. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种涉及用于测量样品的表面参数的非破坏性技术的系统，用于使用偏振光谱测量表面的双折射，膜厚等。 解决方案：将宽带辐射的极化样品束46聚焦到样品3的表面，并且由样品偏振的辐射由不同入射平面中的反射镜系统收集。 相对于偏振平面分析调制的辐射以提供偏振光谱。 然后可以从光谱导出厚度和折射信息。 通过聚焦和样品改变样品光束的偏振，并且重复使用两个不同的孔28来检测调制的辐射的收集，以检测样品中双折射轴的存在或不存在。 在另一个优选实施例中，该技术可以与用于确定薄膜的厚度和折射率的椭偏仪相结合。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011191311A

公开(公告)日：2011-09-29

申请号：JP2011104901

申请日：2011-05-10

Applicant: Kla-Tencor Corp ,  ケーエルエー−テンカー コーポレイション

Inventor： WANG HAIMING ,  MAXTON PATRICK M ,  JOHNSON KENNETH C ,  NIKOONAHAD MEHRDAD

IPC: G01B11/00 ,  G01N21/21 ,  G01B11/06 ,  G01B11/26 ,  G01J3/02 ,  G01J3/447 ,  G01J4/04 ,  G01N21/27 ,  G01N21/41

CPC classification number: G01N21/211 ,  G01B11/0641

Abstract: PROBLEM TO BE SOLVED: To provide an ellipsometer with a self-calibrating capability regarding a system for measuring surface characteristics of a sample such as a semiconductor device. SOLUTION: Two phase modulators or polarizing elements are employed to modulate the polarization of a beam before and after the sample 20 is irradiated with the reference radiation beam 11. The modulated radiation from the sample is detected and harmonics to an analyzer 26 are derived from a detected signal. The harmonics to the analyzer 26 may be used for deriving an ellipsometry parameter and a system parameter for fixed polarizing elements, circular attenuation compensation, depolarization of the polarizing elements, retardances of phase modulators, and the like. The self-calibrating ellipsometer and the combined system may be used for measuring sample characteristics such as film thickness and depolarization of radiation caused by the sample. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种椭圆计量仪，其具有关于用于测量诸如半导体器件的样品的表面特性的系统的自校准能力。 解决方案：使用两相调制器或偏振元件来调制样品20被参考辐射束11照射之前和之后的光束的偏振。来自样品的调制辐射被检测，并且分析器26的谐波为 从检测到的信号导出。 分析器26的谐波可以用于导出椭圆偏振参数和用于固定偏振元件的系统参数，圆形衰减补偿，偏振元件的去极化，相位调制器的延迟等。 自校准椭偏仪和组合系统可用于测量样品特性，如样品的膜厚度和辐射的去极化。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2011164110A

公开(公告)日：2011-08-25

申请号：JP2011048928

申请日：2011-03-07

Applicant: Kla-Tencor Corp ,  ケーエルエー−テンカー コーポレイション

Inventor： LEHMAN KURT R ,  LEE SHING M ,  JOHNSON WALT ,  FIELDEN JOHN ,  ZHAO GUOHENG ,  NIKOONAHAD MEHRDAD

IPC: G01B7/06 ,  B24B37/013 ,  B24B49/10 ,  B24B49/14 ,  G01B7/00 ,  G01B11/06 ,  G01N27/72 ,  H01L21/304 ,  H01L21/66

CPC classification number: B24B37/013 ,  B24B49/105 ,  G01N27/72

Abstract: PROBLEM TO BE SOLVED: To provide a method of obtaining information in-situ regarding a film of a sample by using an eddy current probe, during a process for removing the film. SOLUTION: The eddy current probe has at least one sensing coil. An AC voltage is applied to the sensing coil(s) of the eddy current probe. One or more first signals are measured in the sensing coil(s) of the eddy current probe when the sensing coil(s) are positioned proximate to the film of the sample. One or more second signals are measured in the sensing coil(s) of the eddy current probe when the sensing coil(s) are positioned proximate to a reference material having a fixed composition and/or distance from the sensing coil. A gain and/or distortion of a phase included in the first signals is calibrated based on the second signals. A property value of the film is determined based on the calibrated first signals. An apparatus for performing the above described method is also disclosed. Additionally, a chemical mechanical polishing (CMP) system for polishing a sample with a polishing agent and monitoring the sample is disclosed. The CMP system includes: a polishing table; a sample carrier arranged to hold the sample over the polishing table; and an eddy current probe. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种在去除膜的过程中通过使用涡流探针在原位获得样品的膜的方法。

解决方案：涡流探头具有至少一个感测线圈。 交流电压被施加到涡流探头的传感线圈上。 当感测线圈靠近样品的膜定位时，在涡流探针的感测线圈中测量一个或多个第一信号。 当感测线圈靠近具有固定的组成和/或与感测线圈的距离的参考材料定位时，在涡流探针的感测线圈中测量一个或多个第二信号。 基于第二信号校正包含在第一信号中的相位的增益和/或失真。 基于校准的第一信号确定胶片的属性值。 还公开了一种用于执行上述方法的装置。 此外，公开了一种用抛光剂抛光样品并监测样品的化学机械抛光（CMP）系统。 CMP系统包括：抛光台; 布置成将样品保持在抛光台上的样品载体; 和涡流探头。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：DE69536120D1

公开(公告)日：2010-12-23

申请号：DE69536120

申请日：1995-12-08

Applicant: KLA TENCOR CORP

Inventor： JORDON JOHN R ,  NIKOONAHAD MEHRDAD ,  WELLS KEITH B

IPC: G01N21/95 ,  G01N21/94

公开(公告)号：DE69536124D1

公开(公告)日：2011-01-13

申请号：DE69536124

申请日：1995-12-08

Applicant: KLA TENCOR CORP

Inventor： NIKOONAHAD MEHRDAD ,  STOKOWSKI STANLEY E

IPC: G01N21/88

公开(公告)号：DE69534706T2

公开(公告)日：2006-10-05

申请号：DE69534706

申请日：1995-04-13

Applicant: KLA TENCOR CORP

Inventor： NIKOONAHAD MEHRDAD

IPC: G01B11/30 ,  G01N21/00 ,  G01B11/00 ,  G01N21/88 ,  G01N21/956 ,  G02B26/08 ,  G02B26/10 ,  G02F1/11 ,  G02F1/33 ,  G03F7/20 ,  H01L21/66

Abstract: An apparatus for both deflecting a beam of light illuminating a spot on a surface and varying the size of the spot, electronically, without changing any system components. The apparatus includes an acousto-optic deflector driven with a linear FM signal produced by a chirp signal generator. The linear FM signal is characterized with a dispersion rate, and the chirp signal generator includes a chirp dispersion selector to vary the dispersion rate. A beam of collimated light passes through the acousto-optic deflector and appropriate focusing optics image the beam onto a spot in a nominal focal plane. The chirp dispersion selector sets the dispersion rate in accord to a nominal rate, resulting in the beam illuminating a spot in the focal plane. Generally, the focal plane coincides with a wafer surface, of the type having periodic and non-periodic features on it. The spot size may be varied from that of a diffraction limited spot to a spot whose maximum size is system dependent. The spot size varies as a result of changing the dispersion rate of the chirp signal. The spot size may vary as it is scanned, or may remain fixed during the inspection of a wafer. In this manner, inspection by periodic feature comparison may be implemented when it proves advantageous. Alternatively, a larger spot may be obtained when periodic feature comparison would provide no benefit, and spatial filtering would achieve an enhanced signal/background.

公开(公告)号：AU2002360738A1

公开(公告)日：2003-07-09

申请号：AU2002360738

申请日：2002-12-19

Applicant: KLA TENCOR CORP

Inventor： BAREKET NOAH ,  MIEHER WALTER ,  DZIURA TED ,  SHCHEGROV ANDREI V ,  FABRIKANT ANATOLY ,  NIKOONAHAD MEHRDAD ,  LEVY ADY ,  WACK DANIEL C

IPC: G01N21/21 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F7/20 ,  G01B11/06 ,  G01B11/24 ,  G01B11/30 ,  H01L21/66

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

公开(公告)号：AU5910401A

公开(公告)日：2001-11-07

申请号：AU5910401

申请日：2001-04-19

Applicant: KLA TENCOR CORP

Inventor： NIKOONAHAD MEHRDAD ,  SETHURAMAN ANANTHA R ,  ZHAO GUOHENG

IPC: G01N15/02 ,  B24B37/005 ,  B24B49/12 ,  B24D7/12 ,  G01B11/00 ,  G01B11/06 ,  G01N1/32 ,  G01N1/34 ,  G01N21/00 ,  G01N21/15 ,  G01N21/21 ,  G01N21/45 ,  G01N21/47 ,  G01N21/94 ,  G01N21/956 ,  H01L21/304 ,  H01L21/66 ,  G01N21/55

Abstract: Disclosed is a system for detecting anomalies associated with a sample. The system includes an objective arranged proximate to a sample while the sample is undergoing chemical mechanical polishing and a beam source arranged to generate an incident beam and direct the incident beam through the objective and toward the sample while the sample is undergoing chemical mechanical polishing. The system also includes a sensor arranged to detect a scattered beam reflected from at least one anomaly associated with the sample while the sample is undergoing chemical mechanical polishing, the scattered beam being in response to the incident beam. The scattered beam indicates a characteristic of the anomaly, such as particle size.

公开(公告)号：AU3965402A

公开(公告)日：2002-07-01

申请号：AU3965402

申请日：2001-12-18

Applicant: KLA TENCOR CORP

Inventor： ZHAO GUOHENG ,  GROSS KENNETH P ,  SMEDT RODNEY ,  NIKOONAHAD MEHRDAD

IPC: G01B11/00

Abstract: A periodic structure is illuminated by polychromatic electromagnetic radiation. Radiation from the structure is collected and divided into two rays having different polarization states. The two rays are detected from which one or more parameters of the periodic structure may be derived. In another embodiment, when the periodic structure is illuminated by a polychromatic electromagnetic radiation, the collected radiation from the structure is passed through a polarization element having a polarization plane. The element and the polychromatic beam are controlled so that the polarization plane of the element are at two or more different orientations with respect to the plane of incidence of the polychromatic beam. Radiation that has passed through the element is detected when the plane of polarization is at the two or more positions so that one or more parameters of the periodic structure may be derived from the detected signals. At least one of the orientations of the plane of polarization is substantially stationary when the detection takes place. To have as small a footprint as possible, one employs an optical device that includes a first element directing a polychromatic beam of electromagnetic radiation to the structure and a second optical element collecting radiation from the structure where the two elements form an integral unit or are attached together to form an integrated unit. To reduce the footprint, the measurement instrument and the wafer are both moved. In one embodiment, both the apparatus and the wafer undergo translational motion transverse to each other. In a different arrangement, one of the two motions is translational and the other is rotational. Any one of the above-described embodiments may be included in an integrated processing and detection apparatus which also includes a processing system processing the sample, where the processing system is responsive to the output of any one of the above embodiments for adjusting a processing parameter.

公开(公告)号：AU3100302A

公开(公告)日：2002-07-01

申请号：AU3100302

申请日：2001-12-18

Applicant: KLA TENCOR CORP

Inventor： SHCHEGROV ANDREI V ,  FABRIKANT ANATOLY ,  NIKOONAHAD MEHRDAD

IPC: G01J3/447 ,  G01J4/04 ,  G01N21/21 ,  G01J4/00 ,  G01N21/00

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities R s , R p and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.