公开(公告)号：KR20180008704A

公开(公告)日：2018-01-24

申请号：KR20177036248

申请日：2016-05-13

Applicant: KLA TENCOR CORP

Inventor： MIEHER WALTER

IPC: G03F7/20 ,  G03F1/44

CPC classification number: G03F7/70641 ,  G03F1/44 ,  G03F7/70683

Abstract: 리소그래피마스크가개시된다. 리소그래피마스크는적어도하나의비대칭분할패턴엘리먼트를포함한다. 특정한비대칭분할패턴엘리먼트는, 연속하는세그먼트사이의이격간격이특정한비대칭분할패턴엘리먼트의이미지가비분할패턴이미지이도록샘플상에특정한비대칭분할패턴엘리먼트의이미지를생성하기위한투영광학장치의세트의해상도보다더 작은적어도두 개의세그먼트를포함한다. 샘플상의비분할패턴이미지의위치는, 투영광학장치의세트의광학축을따른샘플의위치를나타낸다.

Abstract translation: 公开了一种光刻掩模。 光刻掩模包括至少一个不对称分割图案元件。 特定不对称分裂图案元件比设定的分辨率为在采样阶段生成特定不对称分裂图案元素的图像更使得连续的段投影光学器件之间的特定不对称分裂图案要素图像的分离距离图像垃圾划分模式 并且包括至少两个很小的部分。 样本上未分段图案图像的位置表示样本沿着该组投影光学系统的光轴的位置。

公开(公告)号：AU2002360738A1

公开(公告)日：2003-07-09

申请号：AU2002360738

申请日：2002-12-19

Applicant: KLA TENCOR CORP

Inventor： BAREKET NOAH ,  MIEHER WALTER ,  DZIURA TED ,  SHCHEGROV ANDREI V ,  FABRIKANT ANATOLY ,  NIKOONAHAD MEHRDAD ,  LEVY ADY ,  WACK DANIEL C

IPC: G01N21/21 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F7/20 ,  G01B11/06 ,  G01B11/24 ,  G01B11/30 ,  H01L21/66

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

公开(公告)号：WO2010104799A3

公开(公告)日：2011-01-27

申请号：PCT/US2010026557

申请日：2010-03-08

Applicant: KLA TENCOR CORP ,  LEVY ADY ,  NGAI SAMUEL ,  BEVIS CHRISTOPHER F ,  CONCINA STEFANO ,  FIELDEN JOHN ,  MIEHER WALTER ,  MUELLER DIETER ,  RICHARDSON NEIL ,  WACK DAN ,  WAGNER LARRY

Inventor： LEVY ADY ,  NGAI SAMUEL ,  BEVIS CHRISTOPHER F ,  CONCINA STEFANO ,  FIELDEN JOHN ,  MIEHER WALTER ,  MUELLER DIETER ,  RICHARDSON NEIL ,  WACK DAN ,  WAGNER LARRY

IPC: H01L21/66

CPC classification number: G01N21/9505 ,  G01N21/3581 ,  H01L22/12

Abstract: Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output.

Abstract translation: 提供了使用太赫兹范围内的辐射来确定样本的一个或多个特征的系统和方法。 一个系统包括被配置为用辐射照射样本的照明子系统。 该系统还包括检测子系统，该检测子系统被配置为响应于样本的照射来检测从样本传播的辐射，并响应于检测到的辐射产生输出。 检测到的辐射包括太赫兹范围内的辐射。 另外，该系统包括配置成使用该输出来确定样本的一个或多个特性的处理器。

公开(公告)号：WO03054475A2

公开(公告)日：2003-07-03

申请号：PCT/US0241151

申请日：2002-12-19

Applicant: KLA TENCOR CORP

Inventor： SHCHEGROV ANDREI V ,  FABRIKANT ANATOLY ,  NIKOONAHAD MEHRDAD ,  LEVY ADY ,  WACK DANIEL C ,  BAREKET NOAH ,  MIEHER WALTER ,  DZIURA TED

IPC: G01N21/21 ,  G01N21/47 ,  G01N21/95 ,  G01N21/956 ,  G03F7/20 ,  G01B11/06 ,  G01B11/24 ,  G01B11/30 ,  H01L21/66

CPC classification number: G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

Abstract translation: 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。