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公开(公告)号：AU2002360738A1
公开(公告)日：2003-07-09
申请号：AU2002360738
申请日：2002-12-19
Applicant: KLA TENCOR CORP
Inventor： BAREKET NOAH , MIEHER WALTER , DZIURA TED , SHCHEGROV ANDREI V , FABRIKANT ANATOLY , NIKOONAHAD MEHRDAD , LEVY ADY , WACK DANIEL C
IPC: G01N21/21 , G01N21/47 , G01N21/95 , G01N21/956 , G03F7/20 , G01B11/06 , G01B11/24 , G01B11/30 , H01L21/66
Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
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公开(公告)号：WO03054475A2
公开(公告)日：2003-07-03
申请号：PCT/US0241151
申请日：2002-12-19
Applicant: KLA TENCOR CORP
Inventor： SHCHEGROV ANDREI V , FABRIKANT ANATOLY , NIKOONAHAD MEHRDAD , LEVY ADY , WACK DANIEL C , BAREKET NOAH , MIEHER WALTER , DZIURA TED
IPC: G01N21/21 , G01N21/47 , G01N21/95 , G01N21/956 , G03F7/20 , G01B11/06 , G01B11/24 , G01B11/30 , H01L21/66
CPC classification number: G03F7/70616 , G01N21/211 , G01N21/47 , G01N21/4788 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/213 , G03F7/70625 , G03F7/70641
Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
Abstract translation: 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。
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公开(公告)号：WO2012096847A3
公开(公告)日：2012-11-01
申请号：PCT/US2012020504
申请日：2012-01-06
Applicant: KLA TENCOR CORP , WACK DANIEL C , KVAMME DAMON F , ROGERS JOHN R , MCGUIRE JAMES P JR , RODGERS JOHN M
Inventor： WACK DANIEL C , KVAMME DAMON F , ROGERS JOHN R , MCGUIRE JAMES P JR , RODGERS JOHN M
Abstract: One embodiment relates to an apparatus that includes an illumination source (102) for illuminating a target substrate (106), objective optics (108) for projecting the EUV light which is reflected from the target substrate, and a sensor (110) for detecting the projected EUV light. The objective optics includes a first mirror (202,302, or 402) which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror (204, 304, or 404) which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror (206, 306, or 406) which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror (208, 308, or 408) which is arranged to receive and reflect the EUV light which is reflected by the third mirror.
Abstract translation: 一个实施例涉及一种装置，其包括用于照射目标基板（106）的照明源（102），用于投射从目标基板反射的EUV光的物镜（108）和用于检测目标基板 预计EUV灯。 物镜包括第一反射镜（202,302或402），第一反射镜（202,302或402）被布置成接收和反射从目标基底反射的EUV光，第二反射镜（204,304或404），其布置成接收和反射 由第一反射镜反射的EUV光，被配置为接收和反射由第二反射镜反射的EUV光的第三反射镜（206,306或406）和第四反射镜（208,308或408） ），其被布置成接收和反射由第三反射镜反射的EUV光。
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公开(公告)号：EP2663897A4
公开(公告)日：2018-01-03
申请号：EP12734716
申请日：2012-01-06
Applicant: KLA-TENCOR CORP
Inventor： WACK DANIEL C , KVAMME DAMON F , ROGERS JOHN R , MCGUIRE JAMES P JR , RODGERS JOHN M
Abstract: One embodiment relates to an apparatus that includes an illumination source (102) for illuminating a target substrate (106), objective optics (108) for projecting the EUV light which is reflected from the target substrate, and a sensor (110) for detecting the projected EUV light. The objective optics includes a first mirror (202,302, or 402) which is arranged to receive and reflect the EUV light which is reflected from the target substrate, a second mirror (204, 304, or 404) which is arranged to receive and reflect the EUV light which is reflected by the first mirror, a third mirror (206, 306, or 406) which is arranged to receive and reflect the EUV light which is reflected by the second mirror, and a fourth mirror (208, 308, or 408) which is arranged to receive and reflect the EUV light which is reflected by the third mirror.
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