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公开(公告)号：WO2013049001A3
公开(公告)日：2013-05-23
申请号：PCT/US2012057019
申请日：2012-09-25
Applicant: KLA TENCOR CORP
Inventor： GAO XIANG , FLANNER III PHILIP D , POSLAVSKY LEONID , JIANG ZHIMING , YE JUN-JIE JULILEN , KAACK TORSTEN , ZHAO QIANG
CPC classification number: G01N21/9501 , G01N21/211 , G01N21/8422 , G01N21/8851 , H01L22/12
Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.
Abstract translation: 提出了用于基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高通量光谱仪用于在制造过程早期快速测量半导体晶片。 光学色散度量是基于光谱数据确定的。 根据光学色散度量值确定带隙结构特征，如带隙，带边缘和缺陷。 在一些实施例中，频带结构特性通过色散度量值的曲线拟合和插值来确定。 在一些其他实施例中，通过选择的扩散模型的回归确定带结构特性。 在一些示例中，还确定了指示高k介电膜的带宽变宽的能带结构特征。 根据制造过程早期确定的能带结构特性估算成品晶圆的电气性能。
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公开(公告)号：EP2761272A4
公开(公告)日：2015-07-29
申请号：EP12837177
申请日：2012-09-25
Applicant: KLA TENCOR CORP
Inventor： GAO XIANG , FLANNER III PHILIP D , POSLAVSKY LEONID , JIANG ZHIMING , YE JUN-JIE JULILEN , KAACK TORSTEN , ZHAO QIANG
CPC classification number: G01N21/9501 , G01N21/211 , G01N21/8422 , G01N21/8851 , H01L22/12
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