公开(公告)号：WO2013049001A3

公开(公告)日：2013-05-23

申请号：PCT/US2012057019

申请日：2012-09-25

Applicant: KLA TENCOR CORP

Inventor： GAO XIANG ,  FLANNER III PHILIP D ,  POSLAVSKY LEONID ,  JIANG ZHIMING ,  YE JUN-JIE JULILEN ,  KAACK TORSTEN ,  ZHAO QIANG

IPC: G01N21/49 ,  G06F19/00

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract translation: 提出了用于基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高通量光谱仪用于在制造过程早期快速测量半导体晶片。 光学色散度量是基于光谱数据确定的。 根据光学色散度量值确定带隙结构特征，如带隙，带边缘和缺陷。 在一些实施例中，频带结构特性通过色散度量值的曲线拟合和插值来确定。 在一些其他实施例中，通过选择的扩散模型的回归确定带结构特性。 在一些示例中，还确定了指示高k介电膜的带宽变宽的能带结构特征。 根据制造过程早期确定的能带结构特性估算成品晶圆的电气性能。

公开(公告)号：WO2013003122A3

公开(公告)日：2013-06-06

申请号：PCT/US2012043157

申请日：2012-06-19

Applicant: KLA TENCOR CORP ,  DI MING ,  KAACK TORSTEN ,  ZHAO QIANG ,  GAO XIANG ,  POSLAVSKY LEONID

Inventor： DI MING ,  KAACK TORSTEN ,  ZHAO QIANG ,  GAO XIANG ,  POSLAVSKY LEONID

IPC: H01L21/66 ,  H01L21/205

CPC classification number: G01N21/211 ,  G01N21/8422 ,  G01N2021/213

Abstract: The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

Abstract translation: 本发明包括生成多个半导体晶片的实验（DOE）的三维设计，DOE的第一维度是薄膜的第一分量的相对量，DOE的第二维度是相对的 量的第二分量，DOE的第三维度是薄膜的厚度，获取每个晶片的光谱，通过提取实数分量（n）和生成一组光散射数据，生成一组光散射数据 用于识别所述光学色散数据集合中的一个或多个系统特征的每个所获取的光谱的复折射率的虚分量（k）; 以及使用所述一组或多个光学色散数据的一个或多个系统特征来生成多分量Bruggeman有效中等近似（BEMA）模型。

公开(公告)号：EP2761272A4

公开(公告)日：2015-07-29

申请号：EP12837177

申请日：2012-09-25

Applicant: KLA TENCOR CORP

Inventor： GAO XIANG ,  FLANNER III PHILIP D ,  POSLAVSKY LEONID ,  JIANG ZHIMING ,  YE JUN-JIE JULILEN ,  KAACK TORSTEN ,  ZHAO QIANG

IPC: G01N21/95 ,  G01B11/06 ,  G01N21/21 ,  G01N21/84 ,  G01N21/88

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12