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    OPTICAL SYSTEM POLARIZER CALIBRATION
    2.
    发明申请
    OPTICAL SYSTEM POLARIZER CALIBRATION 审中-公开
    光学系统偏振器校准

    公开(公告)号：WO2012177404A3

    公开(公告)日：2013-05-10

    申请号：PCT/US2012041258

    申请日：2012-06-07

    Applicant: KLA TENCOR CORP ,  DE VEER JOHANNES D ,  POSLAVSKY LEONID ,  ZHUANG GUORONG V ,  KRISHNAN SHANKAR

    Inventor： DE VEER JOHANNES D ,  POSLAVSKY LEONID ,  ZHUANG GUORONG V ,  KRISHNAN SHANKAR

    IPC: G02B27/62 ,  G02B5/30

    CPC classification number: G01N21/21 ,  G01J3/504 ,  G01N21/274

    Abstract: A method to calibrate a polarizer in polarized optical system at any angle of incidence, by decoupling the calibration from a polarization effect of the system, by providing a calibration apparatus that includes a substrate having a polarizer disposed on a surface thereof, with an indicator on the substrate for indicating a polarization orientation of the polarizer, loading the calibration apparatus in the polarized optical system with the indicator in a desired position, determining an initial angle between the polarization orientation and a reference of the polarized optical system, acquiring spectra using the polarized optical system at a plurality of known angles between the polarization orientation and the reference of the polarized optical system, using the spectra to plot a curve indicating an angle of the polarizer in the polarized optical system, and when the angle of the polarizer is outside of a desired range, adjusting the angle of the polarizer, and repeating the steps of acquiring the spectra, and plotting a curve indicating the angle of the polarizer.

    Abstract translation: 一种通过提供校准装置来校准偏振光学系统中任何入射角的偏振器的方法，通过提供校准装置，该校准装置包括具有设置在其表面上的偏振器的衬底， 用于指示偏振器的偏振取向的衬底，将校准装置装载在具有指示器的期望位置的偏振光学系统中，确定极化取向和偏振光学系统的基准之间的初始角度，使用偏振光 光学系统以偏振方向和偏振光学系统的基准之间的多个已知角度，使用光谱绘制指示偏振器在偏振光学系统中的角度的曲线，以及当偏振器的角度在 期望的范围，调整偏振器的角度，并重复以下步骤 获取光谱，并绘制一个指示偏振片角度的曲线。

    SECONDARY TARGET DESIGN FOR OPTICAL MEASUREMENTS
    3.
    发明申请
    SECONDARY TARGET DESIGN FOR OPTICAL MEASUREMENTS 审中-公开
    用于光学测量的次要目标设计

    公开(公告)号：WO2013067229A3

    公开(公告)日：2013-07-11

    申请号：PCT/US2012063125

    申请日：2012-11-01

    Applicant: KLA TENCOR CORP

    Inventor： YOO SUNGCHUL ,  SHCHEGROV ANDREI V ,  DZIURA THADDEUS G ,  KIM INKYO ,  LEE SEUNGHWAN ,  HWANG BYEONGSU ,  POSLAVSKY LEONID

    IPC: G01N21/47 ,  H01L21/66

    CPC classification number: G06F17/50 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70683 ,  G06F17/10 ,  G06F17/40 ,  G06F19/00

    Abstract: The disclosure is directed to improving optical metrology for a sample with complex structural attributes utilizing custom designed secondary targets. At least one parameter of a secondary target may be controlled to improve sensitivity for a selected parameter of a primary target and/or to reduce correlation of the selected parameter with other parameters of the primary target. Parameters for the primary and secondary target may be collected. The parameters may be incorporated into scatterometry model. Simulations utilizing the scatterometry model may be conducted to determine a level of sensitivity or a level of correlation for the selected parameter of the primary target. The controlled parameter of the secondary target may be modified until a selected level of sensitivity or a selected level of correlation is achieved.

    Abstract translation: 本公开旨在改进具有利用定制设计的次要目标的具有复杂结构属性的样本的光学计量学。 可以控制辅助目标的至少一个参数以提高对主要目标的选定参数的灵敏度和/或减少所选参数与主要目标的其他参数的相关性。 可以收集主要和次要目标的参数。 这些参数可以并入散射测量模型中。 可以进行利用散射测量模型的模拟来确定主要目标的选定参数的灵敏度水平或相关程度。 可以修改辅助目标的受控参数，直到达到所选择的灵敏度水平或所选择的相关水平。

    MEASUREMENT OF COMPOSITION FOR THIN FILMS
    4.
    发明申请
    MEASUREMENT OF COMPOSITION FOR THIN FILMS 审中-公开
    薄膜组合物的测定

    公开(公告)号：WO2013003122A3

    公开(公告)日：2013-06-06

    申请号：PCT/US2012043157

    申请日：2012-06-19

    Applicant: KLA TENCOR CORP ,  DI MING ,  KAACK TORSTEN ,  ZHAO QIANG ,  GAO XIANG ,  POSLAVSKY LEONID

    Inventor： DI MING ,  KAACK TORSTEN ,  ZHAO QIANG ,  GAO XIANG ,  POSLAVSKY LEONID

    IPC: H01L21/66 ,  H01L21/205

    CPC classification number: G01N21/211 ,  G01N21/8422 ,  G01N2021/213

    Abstract: The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

    Abstract translation: 本发明包括生成多个半导体晶片的实验（DOE）的三维设计，DOE的第一维度是薄膜的第一分量的相对量，DOE的第二维度是相对的 量的第二分量，DOE的第三维度是薄膜的厚度，获取每个晶片的光谱，通过提取实数分量（n）和生成一组光散射数据，生成一组光散射数据 用于识别所述光学色散数据集合中的一个或多个系统特征的每个所获取的光谱的复折射率的虚分量（k）; 以及使用所述一组或多个光学色散数据的一个或多个系统特征来生成多分量Bruggeman有效中等近似（BEMA）模型。

    HIGH THROUGHPUT THIN FILM CHARACTERIZATION AND DEFECT DETECTION
    8.
    发明申请
    HIGH THROUGHPUT THIN FILM CHARACTERIZATION AND DEFECT DETECTION 审中-公开
    高通量薄膜表征和缺陷检测

    公开(公告)号：WO2013049001A3

    公开(公告)日：2013-05-23

    申请号：PCT/US2012057019

    申请日：2012-09-25

    Applicant: KLA TENCOR CORP

    Inventor： GAO XIANG ,  FLANNER III PHILIP D ,  POSLAVSKY LEONID ,  JIANG ZHIMING ,  YE JUN-JIE JULILEN ,  KAACK TORSTEN ,  ZHAO QIANG

    IPC: G01N21/49 ,  G06F19/00

    CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

    Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

    Abstract translation: 提出了用于基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高通量光谱仪用于在制造过程早期快速测量半导体晶片。 光学色散度量是基于光谱数据确定的。 根据光学色散度量值确定带隙结构特征，如带隙，带边缘和缺陷。 在一些实施例中，频带结构特性通过色散度量值的曲线拟合和插值来确定。 在一些其他实施例中，通过选择的扩散模型的回归确定带结构特性。 在一些示例中，还确定了指示高k介电膜的带宽变宽的能带结构特征。 根据制造过程早期确定的能带结构特性估算成品晶圆的电气性能。

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