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    System and method for inspecting semiconductor wafers
    1.
    发明专利
    System and method for inspecting semiconductor wafers 有权
    用于检查半导体波形的系统和方法

    公开(公告)号：JP2010249833A

    公开(公告)日：2010-11-04

    申请号：JP2010131351

    申请日：2010-06-08

    Applicant: Kla-Tencor Corp ,  ケーエルエー−テンカー コーポレイション

    Inventor： ROSENGAUS ELIEZER ,  LANGE STEVEN R

    IPC: G01B11/30 ,  G01N21/956 ,  G01N21/95 ,  G06T1/00 ,  H01L21/66 ,  H01L21/677

    CPC classification number: G01N21/95623 ,  G01N21/9501 ,  G01N2021/8822 ,  H01L21/67155

    Abstract: PROBLEM TO BE SOLVED: To enable high-speed inspection of semiconductor wafers. SOLUTION: A plurality of independent, low cost, optical-inspection subsystems 30 are packaged and integrated to simultaneously perform parallel inspections of portions of the wafer 20. The wafer location relative to the inspection is controlled so that the entire wafer is imaged by the system of optical subsystems in a raster-scan mode. A monochromatic coherent-light source illuminates the wafer surface. A darkfield-optical system collects scattered light and filters patterns produced by valid periodic wafer structures using Fourier filtering. The filtered light is processed by general purpose digital-signal processors. Image subtraction methods are used to detect wafer defects, which are reported to a main computer 50 to aid in statistical process control, particularly for manufacturing equipment. COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 要解决的问题：为了能够高速检查半导体晶片。 解决方案：多个独立的，低成本的光学检查子系统30被封装和集成，以同时对晶片20的部分进行并行检查。控制相对于检查的晶片位置，使得整个晶片被成像 通过光学子系统的系统以光栅扫描模式。 单色相干光源照亮晶片表面。 暗场光学系统收集散射光，并使用傅立叶滤波对由有效的周期性晶片结构产生的滤波图案进行滤波。 滤波后的光由通用数字信号处理器处理。 图像减法方法用于检测晶片缺陷，其报告给主计算机50，以帮助统计过程控制，特别是用于制造设备。 版权所有（C）2011，JPO＆INPIT

    A system and method for inspecting semiconductor wafers
    2.
    发明专利
    A system and method for inspecting semiconductor wafers 未知

    公开(公告)号：AU3875899A

    公开(公告)日：1999-11-16

    申请号：AU3875899

    申请日：1999-04-30

    Applicant: KLA TENCOR CORP

    Inventor： ROSENGAUS ELIEZER ,  LANGE STEVEN R

    IPC: G01B11/30 ,  G01N21/95 ,  G01N21/956 ,  G06T1/00 ,  H01L21/66 ,  H01L21/677 ,  G01N21/89

    Abstract: A method for inspecting semiconductor wafers is provided in which a plurality of independent, low-cost, optical-inspection subsystems are packaged and integrated to simultaneously perform parallel inspections of portions of the wafer, the wafer location relative to the inspection being controlled so that the entire wafer is imaged by the system of optical subsystems in a raster-scan mode. A monochromatic coherent-light source illuminates the wafer surface. A darkfield-optical system collects scattered light and filters patterns produced by valid periodic wafer structures using Fourier filtered. The filtered light is processed by general purpose digital-signal processors. Image subtraction methods are used to detect wafer defects, which are reported to a main computer to aid in statistical process control, particularly for manufacturing equipment.

    3.
    发明专利
    未知

    公开(公告)号：DE60134834D1

    公开(公告)日：2008-08-28

    申请号：DE60134834

    申请日：2001-03-09

    Applicant: KLA TENCOR CORP

    Inventor： LANGE STEVEN R ,  SHAFER DAVID

    IPC: G02B15/14 ,  G02B21/06 ,  G01N21/956 ,  G01Q10/00 ,  G01Q30/20 ,  G02B17/00 ,  G02B17/08 ,  G02B21/00 ,  G02B21/02 ,  G02B21/04 ,  G02B25/00

    Abstract: An optical system comprising three lens sections, a catadioptric objective lens section, a reimaging lens section and a zoom lens section, which are all aligned along the optical path of the optical system. The reimaging lens section re-images the system pupil such that the re-imaged pupil is accessible separately from any of the lens sections. The reimaging lens section includes an intermediate focus lens group, which is used to create an intermediate focus, a recollimating lens group, which is used to recollimate the light traveling from the intermediate focus lens group, refocusing group to generate the re-image of the pupil. The optical system may also include a beamsplitter, which creates a separated illumination pupil and collection pupil. The illumination pupil and the collection pupil may then be manipulated with an illumination aperture and a collection aperture, respectively, so that the optical system may operate in various test modes such as brightfield, ring darkfield, full-sky illumination, and laser darkfield with Fourier filtering capability. Another aspect of the invention pertains to a method for using the broad spectral region catadioptric optical system. The method includes the operations of directing radiation from a radiation source so that the radiation passes through the illumination pupil and the collection pupil of the optical system. The method also includes operations for configuring the illumination pupil and the collection pupil so that the optical system may operate in brightfield, ring darkfield, full-sky or laser darkfield illumination mode, with Fourier filtering capability.

    DEFECT MARKING FOR SEMICONDUCTOR WAFER INSPECTION
    4.
    发明专利
    DEFECT MARKING FOR SEMICONDUCTOR WAFER INSPECTION 未知

    公开(公告)号：SG11201900913VA

    公开(公告)日：2019-04-29

    申请号：SG11201900913V

    申请日：2017-09-26

    Applicant: KLA TENCOR CORP

    Inventor： SHORTT DAVID W ,  LANGE STEVEN R ,  WEI JUNWEI ,  KAPP DANIEL ,  AMSDEN CHARLES

    IPC: H01L21/66 ,  H01L21/67

    Abstract: Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.

    INSPECTION SYSTEMS AND TECHNIQUES WITH ENHANCED DETECTION
    5.
    发明专利
    INSPECTION SYSTEMS AND TECHNIQUES WITH ENHANCED DETECTION 未知

    公开(公告)号：SG11201704382XA

    公开(公告)日：2017-06-29

    申请号：SG11201704382X

    申请日：2015-11-30

    Applicant: KLA TENCOR CORP

    Inventor： LANGE STEVEN R ,  HWANG SHIOW-HWEI ,  BAR AMIR

    IPC: H01L21/66

    Abstract: Disclosed are methods and apparatus for inspecting semiconductor samples. On an inspection tool, a plurality of different wavelength ranges is selected for different layers of interest of one or more semiconductor samples based on whether such different layers of interest have an absorber type material present within or near such different layers of interest. On the inspection tool, at least one incident beam is directed at the different wavelength ranges towards the different layers of interest and, in response, output signals or images are obtained for each of the different layers of interest. The output signals or images from each of the different layers of interest are analyzed to detect defects in such different layers of interest.

    APPARATUS AND METHODS FOR REDUCING THIN FILM COLOR VARIATION IN OPTICAL INSPECTION OF SEMICONDUCTOR DEVICES AND OTHER SURFACES
    6.
    发明申请
    APPARATUS AND METHODS FOR REDUCING THIN FILM COLOR VARIATION IN OPTICAL INSPECTION OF SEMICONDUCTOR DEVICES AND OTHER SURFACES 审中-公开
    用于减少半导体器件和其他表面的光学检查中的薄膜变色的装置和方法

    公开(公告)号：WO03001146A9

    公开(公告)日：2004-05-06

    申请号：PCT/US0220017

    申请日：2002-06-21

    Applicant: KLA TENCOR CORP

    Inventor： GUAN YU ,  FU HONG ,  LANGE STEVEN R

    IPC: G01B11/06 ,  G01J3/10 ,  G01J3/46

    CPC classification number: G01J3/10 ,  G01B11/0625 ,  G01J3/46

    Abstract: Disclosed are methods and apparatus for designing an optical spectrum of an illumination light beam within an optical inspection system. A set of conditions for inspecting a film on a sample by directing an illumination light beam at the sample is determined. At least a portion of the illumination light beam is reflected off the sample and used to generate an image of at least a portion of the film on the sample. A plurality of peak wavelength values are determined for the optical spectrum of the illumination light beam so as to control color variation in the image of the film portion. The determination of the peak wavelengths is based on the determined set of conditions and a selected thickness range of the film. In one specific embodiment, the color variation is reduced, while in another embodiment the color variation is increased to enhance pattern contrast. An apparatus which implements the designed optical spectrum is also disclosed.

    Abstract translation: 公开了用于设计光学检查系统内的照明光束的光谱的方法和装置。 确定通过在样品上引导照明光束来检查样品上的胶片的一组条件。 照明光束的至少一部分从样品反射并用于产生样品上的膜的至少一部分的图像。 针对照明光束的光谱确定多个峰值波长值，以便控制胶片部分的图像中的颜色变化。 峰值波长的确定基于所确定的条件集合和膜的选定厚度范围。 在一个具体实施例中，颜色变化减小，而在另一实施例中，颜色变化增加以增强图案对比度。 还公开了一种实现设计的光谱的装置。

    A SYSTEM AND METHOD FOR INSPECTING SEMICONDUCTOR WAFERS
    9.
    发明公开
    A SYSTEM AND METHOD FOR INSPECTING SEMICONDUCTOR WAFERS 有权
    VORRICHTUNG UND VERFAHREN ZUMPRÜFENVON HALBLEITERSCHEIBEN

    公开(公告)号：EP1075652A4

    公开(公告)日：2007-06-06

    申请号：EP99921584

    申请日：1999-04-30

    Applicant: KLA TENCOR CORP

    Inventor： ROSENGAUS ELIEZER ,  LANGE STEVEN R

    IPC: G01B11/30 ,  G01N21/95 ,  G01N21/956 ,  G06T1/00 ,  H01L21/66 ,  H01L21/677 ,  G01N21/89

    CPC classification number: G01N21/95623 ,  G01N21/9501 ,  G01N2021/8822 ,  H01L21/67155

    Abstract: A method for inspecting semiconductor wafers is provided in which a plurality of independent, low cost, optical-inspection subsystems (30) are packaged and integrated to simultaneously perform parallel inspections of portions of the wafer (20), the wafer location relative to the inspection being controlled so that the entire wafer (20) is imaged by the system of optical subsystems (30) in a raster-scan mode. A monochromatic coherent-light source illuminates the wafer surface. A darkfield-optical system collects scattered light and filters patterns produced by valid periodic wafer structures using Fourier filtering. The filtered light is processed by general purpose digital-signal processors (19). Image subtraction methods are used to detect wafer defects, which are reported to a main computer (50) to aid in statistical process control, particularly for manufacturing equipment.

    Abstract translation: 提供了一种用于检查半导体晶片的方法，其中多个独立的低成本光学检查子系统（30）被封装和集成以同时执行晶片（20）的部分的平行检查，相对于检查的晶片位置 被控制为使得整个晶片（20）由光学子系统（30）的系统以光栅扫描模式成像。 单色相干光源照射晶圆表面。 暗场光学系统使用傅里叶滤波来收集散射光并过滤由有效的周期性晶片结构产生的图案。 滤波后的光由通用数字信号处理器（19）处理。 图像减法方法被用于检测晶片缺陷，其被报告给主计算机（50）以辅助统计过程控制，特别是用于制造设备。

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