公开(公告)号：WO2006113145A2

公开(公告)日：2006-10-26

申请号：PCT/US2006012846

申请日：2006-04-07

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G06F17/50 ,  G03F1/00

CPC classification number: G03F1/84 ,  G03F1/36 ,  Y10S430/146

Abstract: Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.

Abstract translation: 公开了用于减轻图案化晶片上的方差（例如，临界尺寸方差）的系统和方法。 通常，使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。 预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。 在具体实现中，诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版，并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积 在指定位置。 在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量，以便减轻使用修改的掩模版图案化的晶片上识别的方差。

公开(公告)号：WO2006113126A3

公开(公告)日：2009-04-09

申请号：PCT/US2006012608

申请日：2006-04-03

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G06K9/00 ,  G01R31/26 ,  H01L21/22 ,  H01L21/38 ,  H01L21/66

CPC classification number: G03F1/84 ,  G03F1/38 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70625 ,  Y10S430/146

Abstract: Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may "heal" the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.

Abstract translation: 网状物可以包括用于局部改变光罩光学性质的遮蔽元件（SE）。 然而，由于辐射可能“治愈”SE，因此在光刻过程中由于反复暴露于辐射而导致这样的掩模版可能随时间而降解。 公开了用于监测掩模版的技​​术，以便保持关于掩模版的光学性质和将使用掩模版印刷的晶片上的图案的均匀性的置信度。 网格线进行定期检查，包括掩模版传输测量和/或掩模版的空中成像。 当这种检查表明足够的掩模版降解时，标线片被标记以在其后续在光刻工艺中使用之前进行校正。

公开(公告)号：WO2004051220A3

公开(公告)日：2004-08-05

申请号：PCT/US0337937

申请日：2003-11-25

Applicant: KLA TENCOR TECH CORP

Inventor： STOKOWSKI STAN ,  SAIDIN ZAIN K

IPC: G01N21/956 ,  G01N21/00

CPC classification number: G01M11/0264 ,  G01N21/95607

Abstract: Disclosed are methods and apparatus for altering the phase and/or amplitude of an optical beam within an inspection system (100, 200, 300) using one or more spatial light modulator(s) (SLMs) (108, 112, 122, 212, 220, 230, 312, 332, 320). In one embodiment, an apparatus for optically inspecting a sample with an optical beam is disclosed. The apparatus includes a beam generator (102, 202) for directing an incident optical beam onto the sample whereby at least a first portion of the incident optical beam is directed from the sample (118) as an output beam and a detector (126, 234, 336) positioned to receive at least a portion of the output beam. The detector is also operable to generate an output signal based on the output beam. The apparatus further includes one or more imaging optics (e.g., 224, 228, 226, 232) for directing the output beam to the detector and a programmable spatial light modulator (SLM) positioned within an optical path of the incident or output beam. The SLM is configurable to adjust a phase and/or amplitude profile of the incident beam or the output beam. The apparatus also has a control system (128, 236, 338) operable to configure the SLM to alter the phase and/or amplitude profile of the incident beam or the output beam. For example, the SLM may be configured to alter the illumination profile of the incident beam to achieve different inspection modes. In another example, the SLM may be configured to alter the phase and/or amplitude profile of the output beam so as to substantially eliminate aberrations produced by the imaging optics. In other embodiments, the apparatus may include two or more SLM's which are configurable to alter the phase and/or amplitude profile of both the incident beam and the output beam.

Abstract translation: 公开了一种使用一个或多个空间光调制器（SLM）（108,112,122,212，...）来改变检查系统（100,200,300）内的光束的相位和/或幅度的方法和装置， 220,230,312,332,320）。 在一个实施例中，公开了一种用光学光学检查样品的装置。 该装置包括用于将入射光束引导到样品上的光束发生器（102,202），由此入射光束的至少第一部分作为输出光束从样品（118）引导，并且检测器（126,234） ，336）定位成接收输出光束的至少一部分。 检测器还可操作以基于输出光束产生输出信号。 该装置还包括用于将输出光束引导到检测器的一个或多个成像光学器件（例如，224,228,226,232）和位于入射或输出光束的光路内的可编程空间光调制器（SLM）。 SLM可配置为调整入射光束或输出光束的相位和/或幅度分布。 该装置还具有可操作以配置SLM以改变入射光束或输出光束的相位和/或幅度分布的控制系统（128,236,338）。 例如，SLM可以被配置为改变入射光束的照明轮廓以实现不同的检查模式。 在另一示例中，SLM可以被配置为改变输出光束的相位和/或幅度分布，以便基本上消除由成像光学器件产生的像差。 在其他实施例中，该装置可以包括可配置为改变入射光束和输出光束两者的相位和/或幅度分布的两个或多个SLM。

公开(公告)号：WO2006113146A3

公开(公告)日：2007-08-30

申请号：PCT/US2006012847

申请日：2006-04-07

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K ,  ZURBRICK LARRY S

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K ,  ZURBRICK LARRY S

IPC: G03F1/00

CPC classification number: G06K9/2063 ,  G03F1/72 ,  G03F1/84 ,  Y10S430/146

Abstract: Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.

Abstract translation: 公开了用于修改掩模版的系统和方法。 通常，来自多个晶片的检查结果或来自光刻模型的预测结果被用于单独地减小光罩的特定位置处的剂量或任何其它光学特性。 在一个实施例中，掩模版的任何合适的光学性质通过光束（例如毫微微秒级激光器）在掩模版上的特定位置处被修改，以便加宽用于这种光学性质的工艺窗口。 光学性质的实例包括剂量，相位，照射角度和双折射率。 使用光束在光罩上的特定位置处调整光学特性的技术可以用于除加宽工艺窗口之外的其它目的。

公开(公告)号：WO2006113135A2

公开(公告)日：2006-10-26

申请号：PCT/US2006012741

申请日：2006-04-05

Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G03F1/00 ,  G03C5/00 ,  G06K9/00

CPC classification number: G03F1/84 ,  Y10S430/146

Abstract: Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.

Abstract translation: 公开了用于使用通过将测量的标线参数的集合与一组参考掩模版参数进行比较而生成的光罩全局变化图来确定和校正光罩变化的技术。 通过掩模版检查获得测量的掩模版参数，并且变化图识别标线区域和相关联的校正水平。 在一个实施例中，将变化数据传送到通过在标定的标线区域内的散射中心嵌入来修改掩模版的系统，从而改善变化。 在另一个实施例中，变化数据被传送到晶片步进器或扫描器，该晶片步进器或扫描器又改变了使用掩模版制造晶片的条件，从而补偿了根据设计的变化和生产晶片。

公开(公告)号：EP1875309A4

公开(公告)日：2012-03-07

申请号：EP06749311

申请日：2006-04-03

Applicant: KLA TENCOR TECH CORP

Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

IPC: G06K9/00 ,  G01R31/26 ,  H01L21/22 ,  H01L21/38 ,  H01L21/66

CPC classification number: G03F1/84 ,  G03F1/38 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70625 ,  Y10S430/146

公开(公告)号：EP1570252A4

公开(公告)日：2011-12-07

申请号：EP03796492

申请日：2003-11-25

Applicant: KLA TENCOR TECH CORP

Inventor： STOKOWSKI STAN ,  SAIDIN ZAIN K

IPC: G01N21/00 ,  G01N21/956

CPC classification number: G01M11/0264 ,  G01N21/95607