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    METHOD FOR MONITORING A RETICLE
    1.
    发明申请
    METHOD FOR MONITORING A RETICLE 审中-公开
    监控方法

    公开(公告)号：WO2006113126A3

    公开(公告)日：2009-04-09

    申请号：PCT/US2006012608

    申请日：2006-04-03

    Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

    Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

    IPC: G06K9/00 ,  G01R31/26 ,  H01L21/22 ,  H01L21/38 ,  H01L21/66

    CPC classification number: G03F1/84 ,  G03F1/38 ,  G03F1/50 ,  G03F7/70433 ,  G03F7/70625 ,  Y10S430/146

    Abstract: Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may "heal" the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.

    Abstract translation: 网状物可以包括用于局部改变光罩光学性质的遮蔽元件（SE）。 然而，由于辐射可能“治愈”SE，因此在光刻过程中由于反复暴露于辐射而导致这样的掩模版可能随时间而降解。 公开了用于监测掩模版的技​​术，以便保持关于掩模版的光学性质和将使用掩模版印刷的晶片上的图案的均匀性的置信度。 网格线进行定期检查，包括掩模版传输测量和/或掩模版的空中成像。 当这种检查表明足够的掩模版降解时，标线片被标记以在其后续在光刻工艺中使用之前进行校正。

    SCANNING ELECTRON MICROSCOPE WITH CRT-TYPE ELECTRON OPTICS
    2.
    发明申请
    SCANNING ELECTRON MICROSCOPE WITH CRT-TYPE ELECTRON OPTICS 审中-公开
    扫描电子显微镜与CRT型电子光学

    公开(公告)号：WO2007070475A2

    公开(公告)日：2007-06-21

    申请号：PCT/US2006047227

    申请日：2006-12-11

    Applicant: KLA TENCOR TECH CORP ,  ADLER DAVID L ,  LEVY ADY ,  RICHARDSON NEIL ,  MCCORD MARK A

    Inventor： ADLER DAVID L ,  LEVY ADY ,  RICHARDSON NEIL ,  MCCORD MARK A

    IPC: G21K7/00

    CPC classification number: H01J37/28 ,  H01J37/04 ,  H01J37/065 ,  H01J37/1475 ,  H01J37/18

    Abstract: One embodiment relates to an apparatus, including a CRT-type gun (for example, 102, or 302, or 510, or 1002, or 1113) and deflectors to generate and scan the electron beam, which utilizes the electron beam for inspection or metrology of a substrate. The apparatus may comprise a portable scanning electron microscope. Another embodiment relates to a method of inspecting a substrate or measuring an aspect of the substrate, where an electron beam is focused using electrostatic lenses formed by metal plates (704) supported by and separated by fused glass beads (706) or other insulating material. Another embodiment relates to a method of obtaining an electron beam image of a surface of a bulk specimen where a portable SEM device is moved to the bulk specimen. Other embodiments and features are also disclosed.

    Abstract translation: 一个实施例涉及一种包括CRT型枪（例如，102或302，或510，或1002或1113）和用于产生和扫描电子束的偏转器的装置，其利用电子束进行检查或计量 的基底。 该装置可以包括便携式扫描电子显微镜。 另一实施例涉及一种检查衬底或测量衬底的方面的方法，其中电子束被使用由熔融玻璃珠（706）或其他绝缘材料支撑并由其分离的金属板（704）形成的静电透镜聚焦。 另一实施例涉及一种获得便携式SEM装置移动到散装试样的散装试样的表面的电子束图像的方法。 还公开了其它实施例和特征。

    TEST STRUCTURES AND METHODS FOR MONITORING OR CONTROLLING A SEMICONDUCTOR FABRICATION PROCESS
    3.
    发明申请
    TEST STRUCTURES AND METHODS FOR MONITORING OR CONTROLLING A SEMICONDUCTOR FABRICATION PROCESS 审中-公开
    用于监测或控制半导体制造工艺的测试结构和方法

    公开(公告)号：WO2006012388A3

    公开(公告)日：2006-12-14

    申请号：PCT/US2005025821

    申请日：2005-07-22

    Applicant: KLA TENCOR TECH CORP ,  MONAHAN KEVIN ,  EICHELBERGER BRAD ,  LEVY ADY

    Inventor： MONAHAN KEVIN ,  EICHELBERGER BRAD ,  LEVY ADY

    IPC: G03F7/20

    CPC classification number: G03F7/70633 ,  G03F7/70625 ,  G03F7/70641 ,  G03F7/70683 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Various test structures and methods for monitoring or controlling a semiconductor fabrication process are provided. One test structure formed on a wafer as a monitor for a lithography process includes a bright field target (30) that includes first grating structures (32) . The test structure also includes a dark field target (34) that includes second grating structures (36) . The first and second grating structures have one or more characteristics that are substantially the same as one or more characteristics of device structures formed on the wafer. In addition, the test structure includes a phase shift target (38) having characteristics that are substantially the same as the characteristics of the bright field or dark field target except that grating structures (40) of the phase shift target are shifted in optical phase from the first or second grating structures. One or more characteristics of the targets can be measured and used to determine parameter (s) of the lithography process .

    Abstract translation: 提供了用于监测或控制半导体制造工艺的各种测试结构和方法。 在作为光刻处理的监视器的晶片上形成的一个测试结构包括包括第一光栅结构（32）的明场目标（30）。 测试结构还包括包括第二光栅结构（36）的暗场靶（34）。 第一和第二光栅结构具有与形成在晶片上的器件结构的一个或多个特性基本上相同的一个或多个特性。 此外，测试结构包括具有与亮场或暗场目标的特性基本相同的特性的相移目标（38），除了相移目标物的光栅结构（40）在光学相位 第一或第二光栅结构。 可以测量目标的一个或多个特征并用于确定光刻工艺的参数。

    METHODS AND SYSTEMS FOR CONTROLLING VARIATION IN DIMENSIONS OF PATTERNED FEATURES ACROSS A WAFER
    4.
    发明申请
    METHODS AND SYSTEMS FOR CONTROLLING VARIATION IN DIMENSIONS OF PATTERNED FEATURES ACROSS A WAFER 审中-公开
    用于控制WAFER中图案特征尺寸变化的方法和系统

    公开(公告)号：WO2006069255A2

    公开(公告)日：2006-06-29

    申请号：PCT/US2005046636

    申请日：2005-12-20

    Applicant: KLA TENCOR TECH CORP ,  LEVY ADY ,  HANNA MICHAEL ,  WACK DAN ,  FIELDEN JOHN ,  BEVIS CHRISTOPHER F ,  WAGNER LARRY

    Inventor： LEVY ADY ,  HANNA MICHAEL ,  WACK DAN ,  FIELDEN JOHN ,  BEVIS CHRISTOPHER F ,  WAGNER LARRY

    IPC: G06F17/50 ,  G01C25/00 ,  G03C5/00 ,  H01L21/66

    CPC classification number: G03F7/70675 ,  G03F7/38 ,  G03F7/40 ,  G03F7/70425 ,  G03F7/70625

    Abstract: Methods and systems for controlling variation in dimensions of patterned features across a wafer are provided. One method includes measuring a characteristic of a latent image formed in a resist at more than one location across a wafer during a lithography process. The method also includes altering a parameter of the lithography process in response to the characteristic to reduce variation in dimensions of patterned features formed across the wafer by the lithography process. Altering the parameter compensates for non-time varying spatial variation in a temperature to which the wafer is exposed during a post exposure bake step of the lithography process and an additional variation in the post exposure bake step.

    Abstract translation: 提供了用于控制跨晶片的图案化特征的尺寸变化的方法和系统。 一种方法包括在光刻过程期间测量跨越晶片的多于一个位置处的抗蚀剂中形成的潜像的特性。 该方法还包括响应于特性来改变光刻工艺的参数，以减小通过光刻工艺在晶片上形成的图案化特征的尺寸变化。 改变参数补偿在光刻工艺的后曝光烘烤步骤期间晶片曝光的温度中的非时间变化的空间变化和后曝光烘烤步骤的附加变化。

    SYSTEMS AND METHODS FOR MODIFYING A RETICLE'S OPTICAL PROPERTIES
    6.
    发明申请
    SYSTEMS AND METHODS FOR MODIFYING A RETICLE'S OPTICAL PROPERTIES 审中-公开
    用于修改虚拟光学特性的系统和方法

    公开(公告)号：WO2006113146A3

    公开(公告)日：2007-08-30

    申请号：PCT/US2006012847

    申请日：2006-04-07

    Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K ,  ZURBRICK LARRY S

    Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K ,  ZURBRICK LARRY S

    IPC: G03F1/00

    CPC classification number: G06K9/2063 ,  G03F1/72 ,  G03F1/84 ,  Y10S430/146

    Abstract: Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.

    Abstract translation: 公开了用于修改掩模版的系统和方法。 通常，来自多个晶片的检查结果或来自光刻模型的预测结果被用于单独地减小光罩的特定位置处的剂量或任何其它光学特性。 在一个实施例中，掩模版的任何合适的光学性质通过光束（例如毫微微秒级激光器）在掩模版上的特定位置处被修改，以便加宽用于这种光学性质的工艺窗口。 光学性质的实例包括剂量，相位，照射角度和双折射率。 使用光束在光罩上的特定位置处调整光学特性的技术可以用于除加宽工艺窗口之外的其它目的。

    METHOD FOR DETERMINING AND CORRECTING RETICLE VARIATIONS
    7.
    发明申请
    METHOD FOR DETERMINING AND CORRECTING RETICLE VARIATIONS 审中-公开
    用于确定和修正版本变化的方法

    公开(公告)号：WO2006113135A2

    公开(公告)日：2006-10-26

    申请号：PCT/US2006012741

    申请日：2006-04-05

    Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

    Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

    IPC: G03F1/00 ,  G03C5/00 ,  G06K9/00

    CPC classification number: G03F1/84 ,  Y10S430/146

    Abstract: Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.

    Abstract translation: 公开了用于使用通过将测量的标线参数的集合与一组参考掩模版参数进行比较而生成的光罩全局变化图来确定和校正光罩变化的技术。 通过掩模版检查获得测量的掩模版参数，并且变化图识别标线区域和相关联的校正水平。 在一个实施例中，将变化数据传送到通过在标定的标线区域内的散射中心嵌入来修改掩模版的系统，从而改善变化。 在另一个实施例中，变化数据被传送到晶片步进器或扫描器，该晶片步进器或扫描器又改变了使用掩模版制造晶片的条件，从而补偿了根据设计的变化和生产晶片。

    SYSTEMS AND METHODS FOR MITIGATING VARIANCES ON A PATTERNED WAFER USING A PREDICTION MODEL
    8.
    发明申请
    SYSTEMS AND METHODS FOR MITIGATING VARIANCES ON A PATTERNED WAFER USING A PREDICTION MODEL 审中-公开
    使用预测模型减少图形波形上的变量的系统和方法

    公开(公告)号：WO2006113145A2

    公开(公告)日：2006-10-26

    申请号：PCT/US2006012846

    申请日：2006-04-07

    Applicant: KLA TENCOR TECH CORP ,  WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

    Inventor： WATSON STERLING G ,  LEVY ADY ,  MACK CHRIS A ,  STOKOWSKI STANLEY E ,  SAIDIN ZAIN K

    IPC: G06F17/50 ,  G03F1/00

    CPC classification number: G03F1/84 ,  G03F1/36 ,  Y10S430/146

    Abstract: Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.

    Abstract translation: 公开了用于减轻图案化晶片上的方差（例如，临界尺寸方差）的系统和方法。 通常，使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。 预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。 在具体实现中，诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版，并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积 在指定位置。 在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量，以便减轻使用修改的掩模版图案化的晶片上识别的方差。

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