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1.发明申请
公开(公告)号：WO2006113145A3
公开(公告)日：2006-10-26
申请号：PCT/US2006/012846
申请日：2006-04-07
Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION , WATSON, Sterling, G. , LEVY, Ady , MACK, Chris, A. , STOKOWSKI, Stanley, E. , SAIDIN, Zain, K.
Inventor： WATSON, Sterling, G. , LEVY, Ady , MACK, Chris, A. , STOKOWSKI, Stanley, E. , SAIDIN, Zain, K.
Abstract: Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.
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公开(公告)号：WO2006113126A2
公开(公告)日：2006-10-26
申请号：PCT/US2006/012608
申请日：2006-04-03
Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION , WATSON, Sterling, G. , LEVY, Ady , MACK, Chris, A. , STOKOWSKI, Stanley, E. , SAIDIN, Zain, K.
Inventor： WATSON, Sterling, G. , LEVY, Ady , MACK, Chris, A. , STOKOWSKI, Stanley, E. , SAIDIN, Zain, K.
CPC classification number: G03F1/84 , G03F1/38 , G03F1/50 , G03F7/70433 , G03F7/70625 , Y10S430/146
Abstract: Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may "heal" the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.
Abstract translation: 网状物可以包括用于局部改变光罩光学性质的遮蔽元件（SE）。 然而，由于辐射可能“治愈”SE，因此在光刻过程中由于反复暴露于辐射而导致这样的掩模版可能随时间而降解。 公开了用于监测掩模版的技术，以便保持关于掩模版的光学性质和将使用掩模版印刷的晶片上的图案的均匀性的置信度。 网格线进行定期检查，包括掩模版传输测量和/或掩模版的空中成像。 当这种检查表明足够的掩模版降解时，标线片被标记以在其后续在光刻工艺中使用之前进行校正。
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公开(公告)号：WO2006113146A2
公开(公告)日：2006-10-26
申请号：PCT/US2006/012847
申请日：2006-04-07
Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION , WATSON, Sterling, G. , LEVY, Ady , MACK, Chris, A. , STOKOWSKI, Stanley, E. , SAIDIN, Zain, K. , ZURBRICK, Larry, S.
Inventor： WATSON, Sterling, G. , LEVY, Ady , MACK, Chris, A. , STOKOWSKI, Stanley, E. , SAIDIN, Zain, K. , ZURBRICK, Larry, S.
CPC classification number: G06K9/2063 , G03F1/72 , G03F1/84 , Y10S430/146
Abstract: Disclosed are systems and methods for modifying a reticle. In general, inspection results from a plurality of wafers or prediction results from a lithographic model are used to individually decrease the dose or any other optical property at specific locations of the reticle. In one embodiment, any suitable optical property of the reticle is modified by an optical beam, such as a femto-second laser, at specific locations on the reticle so as to widen the process window for such optical property. Examples of optical properties include dose, phase, illumination angle, and birefringence. Techniques for adjusting optical properties at specific locations on a reticle using an optical beam may be practiced for other purposes besides widening the process window.
Abstract translation: 公开了用于修改掩模版的系统和方法。 通常，来自多个晶片的检查结果或来自光刻模型的预测结果被用于单独地减小光罩的特定位置处的剂量或任何其它光学特性。 在一个实施例中，掩模版的任何合适的光学性质通过光束（例如毫微微秒级激光器）在掩模版上的特定位置处被修改，以便加宽用于这种光学性质的工艺窗口。 光学性质的实例包括剂量，相位，照射角度和双折射率。 使用光束在光罩上的特定位置处调整光学特性的技术可以用于除加宽工艺窗口之外的其它目的。
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公开(公告)号：WO2003042629A1
公开(公告)日：2003-05-22
申请号：PCT/US2002/035882
申请日：2002-11-08
Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION
Inventor： MIEHER, Walter , WACK, Dan , LEVY, Ady
IPC: G01B11/00
CPC classification number: G03F7/70641 , G03F1/28 , G03F1/44 , G06K7/0095
Abstract: Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structure (10) configured to form a focus patterns (12) that contain focus information relating to the focus quality. The focus masking structure (10) generally includes a plurality of source lines (30, 32) that are separated by alternating phase shift zones (34, 36). Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or photolithographic system that generally includes: providing a focus masking structure (10), forming a focus pattern (12) on a work piece (18) with the focus masking structure (10), and obtaining focus information from the focus pattern.
Abstract translation: 公开了用于确定光刻图案或光刻系统的焦点质量的方法和装置结构。 本发明的一个方面涉及被配置为形成聚焦图案（12）的聚焦掩蔽结构（10），该聚焦图案包含与焦点质量有关的焦点信息。 聚焦掩模结构（10）通常包括被交替的相移区（34,36）分离的多条源极线（30,32）。 本发明的另一方面涉及随焦点变化而变化的聚焦图案。 聚焦图案通常包括多个周期性结构，其在散焦的符号和大小之间形成可测量的偏移。 本发明的另一方面涉及一种确定光刻图案或光刻系统的焦点质量的方法，其通常包括：提供聚焦掩模结构（10），在工件（18）上形成聚焦图案（12） 聚焦掩蔽结构（10），以及从焦点图案获得聚焦信息。
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公开(公告)号：WO2006113135A3
公开(公告)日：2006-10-26
申请号：PCT/US2006/012741
申请日：2006-04-05
Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION , WATSON, Sterling, G. , LEVY, Ady , MACK, Chris, A. , STOKOWSKI, Stanley, E. , SAIDIN, Zain, K.
Inventor： WATSON, Sterling, G. , LEVY, Ady , MACK, Chris, A. , STOKOWSKI, Stanley, E. , SAIDIN, Zain, K.
Abstract: Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.
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Patent Agency Ranking6.发明申请
公开(公告)号：WO2004053426A1
公开(公告)日：2004-06-24
申请号：PCT/US2003/038784
申请日：2003-12-05
Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION
Inventor： MIEHER, Walter, D. , LEVY, Ady , GOLOVANEVSKY, Boris , FRIEDMANN, Michael , SMITH, Ian , ADEL, Michael , FABRIKANT, Anatoly , BEVIS, Christopher, F. , FIELDEN, John , BAREKET, Noah , GROSS, Ken , ZALICKI, Piotr , WACK, Dan , DECECCO, Paola , DZIURA, Thaddeus, G.
IPC: G01B11/00
CPC classification number: G03F9/7088 , G03F7/70633 , G03F9/7049 , G03F9/7084
Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra S A , S B , S C , and S D from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra S A , S B , S C , and S D .
Abstract translation: 公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。 在一个实施例中，公开了一种用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的方法。 提供了各自包括第一和第二结构的一部分的目标A，B，C和D。 目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。 偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。 目标A，B，C和D用电磁辐射照射，分别从目标A，B，C和D获得光谱SA，SB，SC和SD。 然后使用基于获得的光谱SA，SB，SC和SD的线性近似来确定第一结构和第二结构之间的任何覆盖误差。
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公开(公告)号：WO2007070475A3
公开(公告)日：2007-06-21
申请号：PCT/US2006/047227
申请日：2006-12-11
Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION , ADLER, David L , LEVY, Ady , RICHARDSON, Neil , MCCORD, Mark A
Inventor： ADLER, David L , LEVY, Ady , RICHARDSON, Neil , MCCORD, Mark A
Abstract: One embodiment relates to an apparatus, including a CRT-type gun (for example, 102, or 302, or 510, or 1002, or 1113) and deflectors to generate and scan the electron beam, which utilizes the electron beam for inspection or metrology of a substrate. The apparatus may comprise a portable scanning electron microscope. Another embodiment relates to a method of inspecting a substrate or measuring an aspect of the substrate, where an electron beam is focused using electrostatic lenses formed by metal plates (704) supported by and separated by fused glass beads (706) or other insulating material. Another embodiment relates to a method of obtaining an electron beam image of a surface of a bulk specimen where a portable SEM device is moved to the bulk specimen. Other embodiments and features are also disclosed.
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8.发明申请
公开(公告)号：WO2004076963A2
公开(公告)日：2004-09-10
申请号：PCT/US2004/005419
申请日：2004-02-23
Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION , MIEHER, Walter, D. , LEVY, Ady , GOLOVANEVSKY, Boris , FRIEDMANN, Michael , SMITH, Ian , ADEL, Michael , FABRIKANT, Anatoly , BEVIS, Christopher, F. , FIELDEN, John , BAREKET, Noah , GROSS, Ken , ZALICKI, Piotr , WACK, Dan , DECECCO, Paola , DZIURA, Thaddeus, G. , GHINOVKER, Mark
Inventor： MIEHER, Walter, D. , LEVY, Ady , GOLOVANEVSKY, Boris , FRIEDMANN, Michael , SMITH, Ian , ADEL, Michael , FABRIKANT, Anatoly , BEVIS, Christopher, F. , FIELDEN, John , BAREKET, Noah , GROSS, Ken , ZALICKI, Piotr , WACK, Dan , DECECCO, Paola , DZIURA, Thaddeus, G. , GHINOVKER, Mark
IPC: G01B
CPC classification number: G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets. The optical system comprises any one or more of the following apparatus: an imaging reflectometer, an imaging spectroscopic reflectometer, a polarized spectroscopic imaging reflectometer, a scanning reflectometer system, a system with two or more reflectometers capable of parallel data acquisition, a system with two or more spectroscopic reflectometers capable of parallel data acquisition, a system with two or more polarized spectroscopic reflectometers capable of parallel data acquisition, a system with two or more polarized spectroscopic reflectometers capable of serial data acquisition without moving the wafer stage or moving any optical elements or the reflectometer stage, imaging spectrometers, imaging system with wavelength filter, imaging system with long-pass wavelength filter, imaging system with short-pass wavelength filter, imaging system without wavelength filter, interferometric imaging system, imaging ellipsometer, a spectroscopic ellipsometer, a laser ellipsometer having a photoelastic modulator, an imaging spectroscopic ellipsometer, a scanning ellipsometer system, a system with two or more ellipsometers capable of parallel data acquisition, a system with two or more ellipsometers capable of serial data acquisition without moving the wafer stage or moving any optical elements or the ellipsometer stage, a Michelson interferometer, and a Mach-Zehnder interferometer, a Sagnac interferometer, a scanning angle of incidence system, a scanning azimuth angle system, a +/- first order differential reflectometer, a +/- first order differential polarized reflectometer.
Abstract translation: 公开了一种确定多层样本的两层之间的覆盖误差的方法。 对于每个具有由第一层形成的第一结构和由第二层样品形成的第二结构的多个周期性目标，采用光学系统，从而测量来自每个周期性目标的光信号。 在第一和第二结构之间有预定义的偏移。 通过使用基于预定偏移的散射测量覆盖技术来分析来自周期性目标的所测量的光信号，在第一和第二结构之间确定覆盖误差。 光学系统包括以下装置中的任何一个或多个：成像反射计，成像光谱反射计，偏振光谱成像反射计，扫描反射计系统，具有两个或更多个能够并行数据采集的反射计的系统，具有两个 具有能够并行数据采集的两个或更多个偏振分光反射计的系统，具有两个或更多个偏振光谱反射计的系统，其能够进行串行数据采集而不移动晶片台或移动任何光学元件或 反射计阶段，成像光谱仪，波长滤波器成像系统，长波长滤波器成像系统，短波长滤波器成像系统，无波长滤波器成像系统，干涉成像系统，成像椭偏仪，光谱椭偏仪，激光 椭偏仪具有 光弹性调制器，成像光谱椭偏仪，扫描椭偏仪系统，具有能够并行数据采集的两个或更多个椭偏仪的系统，具有两个或更多个椭圆计的系统，能够进行串行数据采集而不移动晶片台或移动任何光学元件或 椭圆偏振台，迈克尔逊干涉仪和马赫 - 策德尔干涉仪，Sagnac干涉仪，入射系统的扫描角度，扫描方位角系统，+/-一阶微分反射计，+/-一阶差分偏振反射计 。
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公开(公告)号：EP1875309A2
公开(公告)日：2008-01-09
申请号：EP06749311.4
申请日：2006-04-03
Applicant: KLA-Tencor Technologies Corporation
Inventor： WATSON, Sterling, G. , LEVY, Ady , MACK, Chris, A. , STOKOWSKI, Stanley, E. , SAIDIN, Zain, K.
CPC classification number: G03F1/84 , G03F1/38 , G03F1/50 , G03F7/70433 , G03F7/70625 , Y10S430/146
Abstract: Reticles may comprise shading elements (SEs) for locally altering the reticle optical properties. However, such reticles may degrade over time as a result of repeated exposure to radiation in a lithography process, as the radiation may 'heal' the SEs. Disclosed are techniques for monitoring a reticle in order to maintain confidence about the reticle's optical properties and the uniformity of patterns on wafers that are to be printed using the reticle. Reticles undergo periodic inspection comprising reticle transmission measurement and/or aerial imaging of the reticle. When such inspection indicates sufficient reticle degradation, the reticle is tagged for correction prior to its subsequent use in a lithography process.
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公开(公告)号：EP1601931B1
公开(公告)日：2011-04-06
申请号：EP04713795.5
申请日：2004-02-23
Applicant: KLA-Tencor Technologies Corporation
Inventor： MIEHER, Walter, D. , LEVY, Ady , GOLOVANEVSKY, Boris , FRIEDMANN, Michael , SMITH, Ian , ADEL, Michael , FABRIKANT, Anatoly , BEVIS, Christopher, F. , FIELDEN, John , BAREKET, Noah , GROSS, Kenneth P. , ZALICKI, Piotr , WACK, Dan , DECECCO, Paola , GHINOVKER, Mark , KNOLL, Noam , MOSHE, Baruch
CPC classification number: G03F9/7088 , G01N21/956 , G01N2021/213 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7049 , G03F9/7084
Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets. The optical system comprises any one or more of the following apparatuses: a reflectometric, a ellipsomertic, imaging, interferometric, and/ or scanning angle system.
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