FOCUS MASKING STRUCTURES, FOCUS PATTERNS AND MEASUREMENTS THEREOF
    1.
    发明申请
    FOCUS MASKING STRUCTURES, FOCUS PATTERNS AND MEASUREMENTS THEREOF 审中-公开
    聚焦掩蔽结构,聚焦图案及其测量

    公开(公告)号:WO2003042629A1

    公开(公告)日:2003-05-22

    申请号:PCT/US2002/035882

    申请日:2002-11-08

    CPC classification number: G03F7/70641 G03F1/28 G03F1/44 G06K7/0095

    Abstract: Methods and device structures used to determine the focus quality of a photolithographic pattern or a photolithographic system are disclosed. One aspect of the invention relates to focus masking structure (10) configured to form a focus patterns (12) that contain focus information relating to the focus quality. The focus masking structure (10) generally includes a plurality of source lines (30, 32) that are separated by alternating phase shift zones (34, 36). Another aspect of the invention relates to focus patterns that change with changes in focus. The focus patterns generally include a plurality of periodic structures that form measurable shifts therebetween corresponding to the sign and magnitude of defocus. Another aspect of the invention relates to a method of determining the focus quality of a photolithographic pattern or photolithographic system that generally includes: providing a focus masking structure (10), forming a focus pattern (12) on a work piece (18) with the focus masking structure (10), and obtaining focus information from the focus pattern.

    Abstract translation: 公开了用于确定光刻图案或光刻系统的焦点质量的方法和装置结构。 本发明的一个方面涉及被配置为形成聚焦图案(12)的聚焦掩蔽结构(10),该聚焦图案包含与焦点质量有关的焦点信息。 聚焦掩模结构(10)通常包括被交替的相移区(34,36)分离的多条源极线(30,32)。 本发明的另一方面涉及随焦点变化而变化的聚焦图案。 聚焦图案通常包括多个周期性结构,其在散焦的符号和大小之间形成可测量的偏移。 本发明的另一方面涉及一种确定光刻图案或光刻系统的焦点质量的方法,其通常包括:提供聚焦掩模结构(10),在工件(18)上形成聚焦图案(12) 聚焦掩蔽结构(10),以及从焦点图案获得聚焦信息。

    APPARATUS AND METHOD FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
    2.
    发明申请
    APPARATUS AND METHOD FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 审中-公开
    用于使用散射检测来检测重叠错误的装置和方法

    公开(公告)号:WO2004076963A2

    公开(公告)日:2004-09-10

    申请号:PCT/US2004/005419

    申请日:2004-02-23

    IPC: G01B

    Abstract: Disclosed is a method of determining an overlay error between two layers of a multiple layer sample. For a plurality of periodic targets that each have a first structure formed from a first layer and a second structure formed from a second layer of the sample, an optical system is employed to thereby measure an optical signal from each of the periodic targets. There are predefined offsets between the first and second structures. An overlay error is determined between the first and second structures by analyzing the measured optical signals from the periodic targets using a scatterometry overlay technique based on the predefined offsets. The optical system comprises any one or more of the following apparatus: an imaging reflectometer, an imaging spectroscopic reflectometer, a polarized spectroscopic imaging reflectometer, a scanning reflectometer system, a system with two or more reflectometers capable of parallel data acquisition, a system with two or more spectroscopic reflectometers capable of parallel data acquisition, a system with two or more polarized spectroscopic reflectometers capable of parallel data acquisition, a system with two or more polarized spectroscopic reflectometers capable of serial data acquisition without moving the wafer stage or moving any optical elements or the reflectometer stage, imaging spectrometers, imaging system with wavelength filter, imaging system with long-pass wavelength filter, imaging system with short-pass wavelength filter, imaging system without wavelength filter, interferometric imaging system, imaging ellipsometer, a spectroscopic ellipsometer, a laser ellipsometer having a photoelastic modulator, an imaging spectroscopic ellipsometer, a scanning ellipsometer system, a system with two or more ellipsometers capable of parallel data acquisition, a system with two or more ellipsometers capable of serial data acquisition without moving the wafer stage or moving any optical elements or the ellipsometer stage, a Michelson interferometer, and a Mach-Zehnder interferometer, a Sagnac interferometer, a scanning angle of incidence system, a scanning azimuth angle system, a +/- first order differential reflectometer, a +/- first order differential polarized reflectometer.

    Abstract translation: 公开了一种确定多层样本的两层之间的覆盖误差的方法。 对于每个具有由第一层形成的第一结构和由第二层样品形成的第二结构的多个周期性目标,采用光学系统,从而测量来自每个周期性目标的光信号。 在第一和第二结构之间有预定义的偏移。 通过使用基于预定偏移的散射测量覆盖技术来分析来自周期性目标的所测量的光信号,在第一和第二结构之间确定覆盖误差。 光学系统包括以下装置中的任何一个或多个:成像反射计,成像光谱反射计,偏振光谱成像反射计,扫描反射计系统,具有两个或更多个能够并行数据采集的反射计的系统,具有两个 具有能够并行数据采集的两个或更多个偏振分光反射计的系统,具有两个或更多个偏振光谱反射计的系统,其能够进行串行数据采集而不移动晶片台或移动任何光学元件或 反射计阶段,成像光谱仪,波长滤波器成像系统,长波长滤波器成像系统,短波长滤波器成像系统,无波长滤波器成像系统,干涉成像系统,成像椭偏仪,光谱椭偏仪,激光 椭偏仪具有 光弹性调制器,成像光谱椭偏仪,扫描椭偏仪系统,具有能够并行数据采集的两个或更多个椭偏仪的系统,具有两个或更多个椭圆计的系统,能够进行串行数据采集而不移动晶片台或移动任何光学元件或 椭圆偏振台,迈克尔逊干涉仪和马赫 - 策德尔干涉仪,Sagnac干涉仪,入射系统的扫描角度,扫描方位角系统,+/-一阶微分反射计,+/-一阶差分偏振反射计 。

    SYSTEMS AND METHODS FOR MEASURING ONE OR MORE CHARACTERISTICS OF PATTERNED FEATURES ON A SPECIMEN
    3.
    发明申请
    SYSTEMS AND METHODS FOR MEASURING ONE OR MORE CHARACTERISTICS OF PATTERNED FEATURES ON A SPECIMEN 审中-公开
    用于测量样本中图案特征的一个或多个特征的系统和方法

    公开(公告)号:WO2007112300A2

    公开(公告)日:2007-10-04

    申请号:PCT/US2007/064769

    申请日:2007-03-23

    Abstract: Systems and methods for measuring one or more characteristics of patterned features on a specimen are provided. One system includes an optical subsystem configured to acquire measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The system also includes a processor configured to determine the one or more characteristics of the patterned features from the measurements. One method includes acquiring measurements of light scattered from the patterned features on the specimen at multiple angles of incidence, multiple azimuthal angles, and multiple wavelengths simultaneously. The method also includes determining the one or more characteristics of the patterned features from the measurements.

    Abstract translation: 提供了用于测量样本上的图案特征的一个或多个特征的系统和方法。 一个系统包括光学子系统,被配置为从多个入射角,多个方位角和多个波长同时获取从样本上的图案化特征散射的光的测量。 该系统还包括配置成从测量中确定图案化特征的一个或多个特性的处理器。 一种方法包括以多个入射角,多个方位角和多个波长同时从样本上的图案化特征散射的光的测量。 该方法还包括从测量中确定图案化特征的一个或多个特性。

    APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY
    4.
    发明申请
    APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY 审中-公开
    用于使用散射检测来检测重叠错误的装置和方法

    公开(公告)号:WO2004053426A1

    公开(公告)日:2004-06-24

    申请号:PCT/US2003/038784

    申请日:2003-12-05

    CPC classification number: G03F9/7088 G03F7/70633 G03F9/7049 G03F9/7084

    Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra S A , S B , S C , and S D from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra S A , S B , S C , and S D .

    Abstract translation: 公开了用于确定样品的两层之间的重叠误差的技术,装置和目标。 在一个实施例中,公开了一种用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的方法。 提供了各自包括第一和第二结构的一部分的目标A,B,C和D。 目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。 偏移量Xa,Xb,Xc和Xd中的每一个优选地不同于零; Xa是相反的符号,不同于Xb; Xc是相反的符号,与Xd不同。 目标A,B,C和D用电磁辐射照射,分别从目标A,B,C和D获得光谱SA,SB,SC和SD。 然后使用基于获得的光谱SA,SB,SC和SD的线性近似来确定第一结构和第二结构之间的任何覆盖误差。

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