公开(公告)号：GB2462157B

公开(公告)日：2011-05-18

申请号：GB0906915

申请日：2009-04-22

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： DO LEE MI ,  BAEK KYU HA

IPC: H01L51/05 ,  H01L51/00

公开(公告)号：GB2462157A8

公开(公告)日：2010-11-10

申请号：GB0906915

申请日：2009-04-22

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： DO LEE MI ,  BAEK KYU HA

公开(公告)号：GB2462157A

公开(公告)日：2010-02-03

申请号：GB0906915

申请日：2009-04-22

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： DO LEE MI ,  BAEK KYU HA

IPC: H01L51/05 ,  H01L51/00

Abstract: A method of fabricating an organic thin film transistor (OTFT) using surface energy control, whereby a gate electrode 120 is formed on the surface of a substrate 110, an insulating layer 130 is then deposited over the substrate 110 and the gate electrode 120, the surface energy of the insulating layer 130 is controlled and an organic semiconductor is deposited thereon to form a channel layer 150, the source 160 and drain 170 electrodes are then deposited onto the organic semiconductor channel layer 150. Alternatively a self-assembled monolayer (SAM) may be deposited between the insulator 130 and the organic semiconductor channel 150. Preferably the surface energy of the insulating layer 130 is controlled by irradiating the surface with UV light, such that the polarity of the insulating surface 130 matches the polarity of the organic semiconductor material.

公开(公告)号：KR100777110B1

公开(公告)日：2007-11-19

申请号：KR20060062870

申请日：2006-07-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KANG SEUNG YOUL ,  AHN SEONG DEOK ,  PARK SANG HEE ,  HWANG CHI SUN ,  YOU IN KYU ,  KIM CHUL AM ,  KIM GI HEON ,  BAEK KYU HA ,  OH JI YOUNG ,  SUH KYUNG SOO

IPC: H01L29/786

CPC classification number: H01L51/107 ,  H01L51/0545

Abstract: A flexible organic thin-film transistor and a manufacturing method thereof are provided to stabilize performance of a final element by maintaining reproducibility and stability in an etch process. A gate electrode(12) is positioned on an upper surface of a substrate(10). An organic semiconductor thin film(16) is formed on both sides of an organic insulating layer in order to face the gate electrode. A source/drain electrode(14) is positioned on the organic insulating layer and is connected to the organic semiconductor thin film. An etch-stop layer(15) is formed to cover the organic insulating layer. The etch-stop layer is formed with an inorganic layer. The inorganic layer is formed with one of an aluminum oxide layer, a silicon oxide layer, and a silicon nitride layer.

Abstract translation: 提供了一种柔性的有机薄膜晶体管及其制造方法，以通过在蚀刻工艺中保持再现性和稳定性来稳定最终元件的性能。 栅电极（12）位于衬底（10）的上表面上。 有机半导体薄膜（16）形成在有机绝缘层的两侧以面对栅电极。 源极/漏极（14）位于有机绝缘层上并与有机半导体薄膜连接。 形成蚀刻停止层（15）以覆盖有机绝缘层。 蚀刻停止层由无机层形成。 无机层由氧化铝层，氧化硅层和氮化硅层中的一个形成。