公开(公告)号：EP2069861A4

公开(公告)日：2010-06-09

申请号：EP07808307

申请日：2007-09-18

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM CHUL AM ,  KANG SEUNG YOUL ,  MYOUNG HEY JIN ,  SUH KYUNG SOO ,  AHN SEONG DEOK ,  KIM GI HEON ,  YOU IN KYU ,  OH JI YOUNG

IPC: G02F1/167

CPC classification number: G02F1/167 ,  G02F1/1303

公开(公告)号：KR100777110B1

公开(公告)日：2007-11-19

申请号：KR20060062870

申请日：2006-07-05

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KANG SEUNG YOUL ,  AHN SEONG DEOK ,  PARK SANG HEE ,  HWANG CHI SUN ,  YOU IN KYU ,  KIM CHUL AM ,  KIM GI HEON ,  BAEK KYU HA ,  OH JI YOUNG ,  SUH KYUNG SOO

IPC: H01L29/786

CPC classification number: H01L51/107 ,  H01L51/0545

Abstract: A flexible organic thin-film transistor and a manufacturing method thereof are provided to stabilize performance of a final element by maintaining reproducibility and stability in an etch process. A gate electrode(12) is positioned on an upper surface of a substrate(10). An organic semiconductor thin film(16) is formed on both sides of an organic insulating layer in order to face the gate electrode. A source/drain electrode(14) is positioned on the organic insulating layer and is connected to the organic semiconductor thin film. An etch-stop layer(15) is formed to cover the organic insulating layer. The etch-stop layer is formed with an inorganic layer. The inorganic layer is formed with one of an aluminum oxide layer, a silicon oxide layer, and a silicon nitride layer.

Abstract translation: 提供了一种柔性的有机薄膜晶体管及其制造方法，以通过在蚀刻工艺中保持再现性和稳定性来稳定最终元件的性能。 栅电极（12）位于衬底（10）的上表面上。 有机半导体薄膜（16）形成在有机绝缘层的两侧以面对栅电极。 源极/漏极（14）位于有机绝缘层上并与有机半导体薄膜连接。 形成蚀刻停止层（15）以覆盖有机绝缘层。 蚀刻停止层由无机层形成。 无机层由氧化铝层，氧化硅层和氮化硅层中的一个形成。