Method and system for reduction of radiation field in wireless power transfer system
    1.
    发明公开
    Method and system for reduction of radiation field in wireless power transfer system 审中-公开
    在无线电力传输系统中减少辐射场的方法和系统

    公开(公告)号:KR20120072181A

    公开(公告)日:2012-07-03

    申请号:KR20100134010

    申请日:2010-12-23

    CPC classification number: H02J50/70 H02J5/005 H02J50/12 H02J7/025

    Abstract: PURPOSE: A wireless power transmission device and method for reducing radiated power of a magnetic resonator are provided to transmit energy by selecting a frequency having relatively low radiated power. CONSTITUTION: A signal generator(102) generates a frequency signal used for wireless energy transmission from general commercial AC powder. A power amplifying unit(104) amplifies the frequency signal. A signal detection unit(106) transfers the amplified signal to a magnetic resonator for wireless energy transmission and detects a radiated signal caused by the magnetic resonator. A standing-wave ratio calculation unit(108) calculates a standing-wave ratio from the detected signal. A control unit selects the frequency having the lowest standing-wave ratio using the standing-wave ratios calculated by the standing-wave ratio calculation unit.

    Abstract translation: 目的:提供一种用于降低磁共振器的辐射功率的无线电力传输装置和方法,用于通过选择具有较低辐射功率的频率来传输能量。 构成:信号发生器(102)产生用于从一般商用AC粉末进行无线能量传输的频率信号。 功率放大单元(104)放大频率信号。 信号检测单元(106)将放大的信号传送到用于无线能量传输的磁共振器,并检测由磁共振器引起的辐射信号。 驻波比计算单元(108)根据检测到的信号计算驻波比。 控制单元使用由驻波比计算单元计算的驻波比选择具有最低驻波比的频率。

    FLEXIBLE ORGANIC THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREOF
    3.
    发明授权
    FLEXIBLE ORGANIC THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREOF 有权
    柔性有机薄膜晶体管及其制备方法

    公开(公告)号:KR100777110B1

    公开(公告)日:2007-11-19

    申请号:KR20060062870

    申请日:2006-07-05

    CPC classification number: H01L51/107 H01L51/0545

    Abstract: A flexible organic thin-film transistor and a manufacturing method thereof are provided to stabilize performance of a final element by maintaining reproducibility and stability in an etch process. A gate electrode(12) is positioned on an upper surface of a substrate(10). An organic semiconductor thin film(16) is formed on both sides of an organic insulating layer in order to face the gate electrode. A source/drain electrode(14) is positioned on the organic insulating layer and is connected to the organic semiconductor thin film. An etch-stop layer(15) is formed to cover the organic insulating layer. The etch-stop layer is formed with an inorganic layer. The inorganic layer is formed with one of an aluminum oxide layer, a silicon oxide layer, and a silicon nitride layer.

    Abstract translation: 提供了一种柔性的有机薄膜晶体管及其制造方法,以通过在蚀刻工艺中保持再现性和稳定性来稳定最终元件的性能。 栅电极(12)位于衬底(10)的上表面上。 有机半导体薄膜(16)形成在有机绝缘层的两侧以面对栅电极。 源极/漏极(14)位于有机绝缘层上并与有机半导体薄膜连接。 形成蚀刻停止层(15)以覆盖有机绝缘层。 蚀刻停止层由无机层形成。 无机层由氧化铝层,氧化硅层和氮化硅层中的一个形成。

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