公开(公告)号：JPH08186262A

公开(公告)日：1996-07-16

申请号：JP31538294

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SOU JIYUNKOU ,  BOKU KEIKOU ,  MINAMI MOTOMORI

IPC: H01L21/20 ,  H01L21/02 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786

Abstract: PURPOSE: To enhance productivity by providing steps for forming a high quality polysilicon thin film and an oxide film from an amorphous silicon thin film and for defining an active region and a gate oxide film by patterning both films thereby shortening the required time of a step for crystallizing the amorphous silicon in a solid phase. CONSTITUTION: An intrinsic amorphous silicon layer is deposited on an insulating board 51 in the first step. In the second step, an amorphous silicon thin film is heat treated in an electric furnace of a high pressure oxygen atmosphere to deposit a polysilicon 52 and an oxide 53. In the third step, the polysilicon 52 and the oxide 53 are patterned to define the active region of TFT. In the fourth step, a side wall oxide 53+ is deposited on the side wall of the polysilicon 52 and the oxide 53. In the fifth step, a gate electrode and a source- drain region are formed. Finally, interconnection step of a metal oxide 57 is carried out thus completing a Poly-Si TFT.

公开(公告)号：JPH07201806A

公开(公告)日：1995-08-04

申请号：JP29182194

申请日：1994-11-25

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YASU KINEI ,  BOKU KEIKOU ,  MINAMI MOTOMORI ,  KIYOU SOUGEN

IPC: B41J2/135 ,  B44C1/22 ,  B44C3/00 ,  B81C1/00 ,  G02B1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L29/84

Abstract: PURPOSE: To manufacture a structure which has a mechanical function into various constitution by combining together identical substrate or different kind substrate jointing technology and selective anisotropic etching technology and decreasing photographic transfer processes. CONSTITUTION: After a [110] substrate 110 and a [100] substrate 1102 are jointed together, the 100 substrate 1102 is formed into a thin film. On one surface of a substrate 1101, an etching protection mask 1103 is formed to form an etching window 1104. This is etched anisotropically in a KOH and EDP solution, and the etching is advanced while a [111] surface 1105 is exposed at right angles to the substrate surface. After the substrate 1101 is etched into a quadrilateral prism, the etching is continued on, while the bottom surface 1107 of the formed quadrilateral is regarded as an etching window. Then the etching advances only to the substrate 1102 positioned below the bottom surface 1107, and when a [111] sidewall 1108 is exposed, the etching is suppressed to form a truncated pyramidal structure 1109. A nozzle is thus manufactured.