公开(公告)号：JPH07294968A

公开(公告)日：1995-11-10

申请号：JP31295394

申请日：1994-12-16

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： CHIN SHIYUKUI ,  SAI EIKAN ,  KEN GOKIN ,  RI KAZUTSUNE

IPC: G02F1/35 ,  G02F3/02 ,  H01L29/15 ,  H01S5/00 ,  H01S3/18

Abstract: PURPOSE: To enable application to a long wavelength optical switch element by optimizing material constitution and structure by investigating the light absorbing characteristics of InGaAsP/InP as four-component mixed material structure. CONSTITUTION: This method finds out optimized structure for maximizing the ratio of light absorption and output strength by operating the wavelength area of 1.55μm as an area for applying the minimum loss value of optical fibers, by adjusting the component ratio and structure of InGaAsP/InP mixed structure. In addition the maximized value of a maximum light absorption value caused by a heavy holeexciting element at the time of generating no electric field is provided by utilizing a parameter (γ) for finding out optimized structure of InP four-component mixed material. For example, the optimized structure for maximizing the light absorption effect of the exciting element by changing (x) and (y) molar fractions and well width of In1-x Gax Asy P1-y /InP material structure to be utilized for an optical bistable switch element is determined, by using the parameter ρ=[α((0)-α(F)]/α(F) (α is a light absorption coefficient and F is the size of electric field in this case).