公开(公告)号：JPH0738118A

公开(公告)日：1995-02-07

申请号：JP32429293

申请日：1993-12-22

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SOU JIYUNKOU ,  HAKU TANEYASU ,  MINAMI MOTOMORI

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE: To form a good polycrystalline Si film on a substrate by creating crystal nuclei in an amorphous Si film on the substrate at specified high temp. or more and separating a step of growing crystal grains at a specified low temp. or less to crystallize it. CONSTITUTION: On a wafer 31 having a silicon oxide film 32 an amorphous Si film 33 is formed and heat-treated at 600 deg.C or more for a short time to create crystal nuclei of adequate density and size in a quickly heat-treating chamber, crystal grains already created in an electric furnace are grown at 600 deg.C or less to form a good polycrystalline Si. When the crystal grain growth is made at 600 deg.C or lower, because the temp. dependence of the crystal nucleus creating is higher than that of the crystal grain growth, new crystal nucleus generation is fully suppressed to form a good polycrystal Si film 33 uniform in the crystal grain.

公开(公告)号：JPH0758209A

公开(公告)日：1995-03-03

申请号：JP14673594

申请日：1994-06-28

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIYOU SOUGEN ,  HAKU TANEYASU

IPC: H01L21/82 ,  H01L21/822 ,  H01L23/525 ,  H01L27/04 ,  H01L29/41 ,  H01L29/86

Abstract: PURPOSE: To enhance recovery capacity of an antifuse element, even upon occurrence of a fusing error and to enhance the electrical conductivity of two electrodes after fusing. CONSTITUTION: This electrically programmable antifuse element for forming an electrode of two layer structure on a semiconductor substrate 1 formed with a functional element through an interlayer film comprises a field oxide 2 deposited on the semiconductor substrate 1, a first electrode 3 formed thereon in a specified pattern, a first insulator 4 deposited on the field oxide 2, while covering the first electrode 3 at the opposite ends thereof, a second insulator 5 deposited as an interlayer insulator on the exposed surface of the first electrode 3 between the first insulators 4, and a second electrode 6 formed on the second insulator 5.