公开(公告)号：JPH0738066A

公开(公告)日：1995-02-07

申请号：JP33820391

申请日：1991-12-20

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RI KIKOU ,  SAI SOUKUN ,  YO JUNICHI ,  KIN CHINSHIYOU ,  RI SHINKOU

IPC: H01L27/10 ,  H01L21/337 ,  H01L21/762 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/808

Abstract: PURPOSE: To provide a product having a vertical structure for realizing a highly integrated structure with reduced area of basic cells by arranging switching junction field transistors and storing capacitors to form the vertical structure. CONSTITUTION: Switching junction field transistors are formed on a semiconductor substrate 1, and storing capacitors are stacked on the junction field transistors to arrange these transistors and capacitors in the form of a vertical structure. The transistor has a gate region at a trench sidewall bottom formed by etching the substrate 1, word line 10a insulated from other element word lines through an insulation film 13 and active region 16 on the substrate 1. The storing capacitor has a storage node on a drain junction region, dielectric film 18 on the top of this node, and polysilicon film 19 for a plate electrode which is insulated from the storage node through an oxide film.