公开(公告)号：DE19643903A1

公开(公告)日：1997-06-26

申请号：DE19643903

申请日：1996-10-30

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUNICATION

Inventor： RYUM BYUNG-RYUL ,  HAN TAE-HYEON ,  CHO DEOK-HO ,  LEE SOO-MIN ,  PYUN KWANG-EUI

IPC: H01L29/70 ,  H01L21/331 ,  H01L29/08 ,  H01L29/737

Abstract: The method initially involves forming a buried collector (2), collector thin film (3), and collector sink on a semiconductor substrate. On the collector structure are formed a silicon oxide film (8), a polysilicon film (9) for a base electrode, a nitride film, and an oxide film. The silicon oxide film is photolithographically exposed and an insulating spacing layer formed on the exposed region side, thus limiting an active region. Then the collector thin film is exposed, using the existing structure as a mask, and a lateral auxiliary film formed for component separation. An ion implantation of a dopant forms a selective collector region (10) in the active region. Then the auxiliary film is removed, the exposed part etched, and a separating, flat trough (17) is formed. Then a side polysilicon film (18) and a self aligning base are formed. A heat treatment after th formation of the collector sink follows which provides an oxide film on its upper section and activates dopants within the collector sink.

公开(公告)号：DE19650493A1

公开(公告)日：1997-06-26

申请号：DE19650493

申请日：1996-12-05

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUNICATION

Inventor： RYUM BYUNG-RYUL ,  CHO DEOK-HO ,  HAN TAE-HYEON ,  LEE SOO-MIN ,  PYUN KWANG-EUI

IPC: H01L21/331 ,  H01L29/737 ,  H01L29/73 ,  H01L21/76

Abstract: The transistor includes a semiconductor substrate, e.g. of silicon, with a buried collector and having an oxide film with a conductive, thin-film base electrode formed on the substrate one after another. The substrate is provided with a heterojunction of e.g. Si or SiGe Ge. The collector is surrounded by the conductive thin film and is formed in transistor active region, bounded by patterns of the conductive thin and first oxide films on the buried collector on both sides of the conductive thin film is formed a first spacing layer. A multilayer base is formed in the active region, while an emitter is grown selectively on the base in an emitter region, bounded by etching of a second oxide film, on whose both sides is formed a second spacing layer. The emitter carries an electrode, while a passivating insulation layer is formed on the structure surface. Metal coupling lines are formed on the base, emitter, and buried collector and go back through the insulation passivation layer and/or the two oxide layers.

公开(公告)号：DE19643903B4

公开(公告)日：2006-07-06

申请号：DE19643903

申请日：1996-10-30

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMM AUTHORITY SEOUL

Inventor： RYUM BYUNG-RYUL ,  HAN TAE-HYEON ,  CHO DEOK-HO ,  LEE SOO-MIN ,  PYUN KWANG-EUI

IPC: H01L21/331 ,  H01L29/70 ,  H01L29/08 ,  H01L29/737

Abstract: An improved method for fabricating a heterojunction bipolar transistor which includes the steps of forming a buried collector, a collector thin film, and a collector sinker on a semiconductor substrate in order, forming a first silicon oxide film, a base electrode polysilicon layer, a nitride film, and an oxidation film on a resulting substrate exposing the first silicon oxidation film, forming a spacer insulation film at the lateral side of the exposed region, and defining an activation region, exposing the collector thin film of the activation region using a mask, and forming an auxiliary lateral film for an isolation of the device, forming a selective collector region by ion-implantating a dopant to the activation region which is limited by the auxiliary lateral film, removing the auxiliary lateral film, etching the exposed portion in an anisotropic etching method, and forming a shallow trench for a device isolation, forming a polysilicon lateral film to have a height which is the same as the height of the base electrode polysilicon layer on the shallow trench, and forming a self-aligned base.