公开(公告)号：SG11202005583QA

公开(公告)日：2020-07-29

申请号：SG11202005583Q

申请日：2018-12-05

Applicant: LAM RES CORP

Inventor： YUAN GUANGBI ,  BAMFORD THADEOUS ,  BAILEY CURTIS WARREN ,  KAUSHAL TONY ,  BIRRU KRISHNA ,  SCHLOSSER WILLIAM ,  SHANBHAG DAMODAR ,  GONG BO ,  QIU HUATAN ,  LAI FENGYUAN ,  HSU CHEN-HUA ,  HOHN GEOFFREY ,  KHARE ROHIT ,  KHO LEONARD WAI FUNG ,  CHANDRASHEKAR ANAND ,  BRENINGER ANDREW H ,  LIU GANG

IPC: H01L21/56 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.