公开(公告)号：KR20200135554A

公开(公告)日：2020-12-02

申请号：KR20207033442

申请日：2019-04-19

Applicant: LAM RES CORP

Inventor： CHANDRASHEKAR ANAND ,  LENZ ERIC H ,  KHO LEONARD WAI FUNG ,  CLEVENGER JEFFREY CHARLES ,  HA IN SU

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/67

Abstract: 본명세서에제공된것들은반도체웨이퍼의에지영역에서프로세싱의균일성을제어하기위한방법들및 장치들이다. 일부실시예들에서, 방법들은에칭가스들및/또는억제가스들과같은처리가스들에에지영역을노출하는단계를포함한다. 또한본 명세서에제공된것들은웨이퍼의에지에서프로세싱분위기의제어를제공하도록구현될수도있는복수의링들을포함하는배제링 어셈블리들이다.

公开(公告)号：SG11202010375QA

公开(公告)日：2020-11-27

申请号：SG11202010375Q

申请日：2019-04-19

Applicant: LAM RES CORP

Inventor： CHANDRASHEKAR ANAND ,  LENZ ERIC H ,  KHO LEONARD WAI FUNG ,  CLEVENGER JEFFREY CHARLES ,  HA IN SU

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/67

Abstract: Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include exposing an edge region to treatment gases such as etch gases and/or inhibition gases. Also provided herein are exclusion ring assemblies including multiple rings that may be implemented to provide control of the processing environment at the edge of the wafer.

公开(公告)号：SG11202005583QA

公开(公告)日：2020-07-29

申请号：SG11202005583Q

申请日：2018-12-05

Applicant: LAM RES CORP

Inventor： YUAN GUANGBI ,  BAMFORD THADEOUS ,  BAILEY CURTIS WARREN ,  KAUSHAL TONY ,  BIRRU KRISHNA ,  SCHLOSSER WILLIAM ,  SHANBHAG DAMODAR ,  GONG BO ,  QIU HUATAN ,  LAI FENGYUAN ,  HSU CHEN-HUA ,  HOHN GEOFFREY ,  KHARE ROHIT ,  KHO LEONARD WAI FUNG ,  CHANDRASHEKAR ANAND ,  BRENINGER ANDREW H ,  LIU GANG

IPC: H01L21/56 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.