公开(公告)号：SG11202005583QA

公开(公告)日：2020-07-29

申请号：SG11202005583Q

申请日：2018-12-05

Applicant: LAM RES CORP

Inventor： YUAN GUANGBI ,  BAMFORD THADEOUS ,  BAILEY CURTIS WARREN ,  KAUSHAL TONY ,  BIRRU KRISHNA ,  SCHLOSSER WILLIAM ,  SHANBHAG DAMODAR ,  GONG BO ,  QIU HUATAN ,  LAI FENGYUAN ,  HSU CHEN-HUA ,  HOHN GEOFFREY ,  KHARE ROHIT ,  KHO LEONARD WAI FUNG ,  CHANDRASHEKAR ANAND ,  BRENINGER ANDREW H ,  LIU GANG

IPC: H01L21/56 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

公开(公告)号：SG11202112768QA

公开(公告)日：2021-12-30

申请号：SG11202112768Q

申请日：2020-05-05

Applicant: LAM RES CORP

Inventor： YUAN GUANGBI ,  GONG BO ,  NARKEVICIUTE IEVA ,  VARADARAJAN BHADRI ,  LAI FENGYUAN ,  MCKERROW ANDREW

IPC: C23C16/32 ,  H01L21/02 ,  C23C16/34 ,  C23C16/50

Abstract: In one embodiment, the disclosed subject matter is a method to produce a substantially uniform, silicon-carbide layer over both dielectric materials and metal materials. In one example, the method includes forming a silicon-nitride layer over the dielectric materials and the metal materials, and forming the silicon carbide layer over the silicon-nitride layer. Other methods are disclosed.

公开(公告)号：SG10201803412XA

公开(公告)日：2018-11-29

申请号：SG10201803412X

申请日：2018-04-24

Applicant: LAM RES CORP

Inventor： VARADARAJAN BHADRI N ,  GUI ZHE ,  GONG BO ,  MCKERROW ANDREW JOHN

Abstract: METHODSAND APPARATUS FOR DEPOSITING SILICON OXIDE ON METAL LAYERS OF THE DISCLOSURE Thin layer of silicon oxide is deposited on a substrate having an exposed layer of metal (e.g., W, Cu, Ti, Co, Ta) without causing substantial oxidation of the metal. The method involves: (a) contacting the substrate having an exposed metal layer with a silicon-containing precursor and adsorbing the precursor on the substrate; (b) removing the unadsorbed precursor from a process chamber; and (c) contacting the adsorbed precursor with a plasma formed in a process gas comprising an oxygen source (e.g., O , CO2 , N 20, 0 3) and H2 , to form silicon oxide from the silicon- containing precursor while suppressing metal oxidation. These steps can be repeated until a silicon oxide film of a desired thickness is formed. In some embodiments, the silicon oxide film is used to improve nucleation of subsequently deposited silicon carbide. Fig. 3 32

公开(公告)号：SG10201602333SA

公开(公告)日：2016-10-28

申请号：SG10201602333S

申请日：2016-03-24

Applicant: LAM RES CORP

Inventor： VARADARAJAN BHADRI N ,  GONG BO ,  BATZER RACHEL E ,  QIU HUATAN ,  VAN SCHRAVENDIJK BART J ,  HOHN GEOFFREY

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.