公开(公告)号：WO2008042580A2

公开(公告)日：2008-04-10

申请号：PCT/US2007078576

申请日：2007-09-14

Applicant: LAM RES CORP ,  CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

Inventor： CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

IPC: H01L21/66 ,  G06F19/00

CPC classification number: G05B19/41875 ,  G05B2219/37398 ,  G05B2219/45031 ,  G05B2219/50057 ,  Y02P90/22

Abstract: A method for calculating a process center for a chuck in a processing chamber is provided. The method includes generating pre-processing and post-processing measurement data points, which is perform by measuring thickness of a film substrate at a set of orientations and a set of distances from a geometric center of the substrate. The method also includes comparing the pre-processing and post-processing measurement data points to calculate a set of etch depth numbers. The method further includes generating etch profiles for the set of orientations. The method yet also includes extrapolating a set of radiuses, which is associated with a first etch depth, from the etch profiles. The method yet further includes generating an off-centered plot, which is a graphical representation of the set of radiuses versus the set of orientations. The method more over includes calculating the process center by applying a curve-fitting equation to the off-centered plot.

Abstract translation: 提供了一种用于计算处理室中的卡盘的处理中心的方法。 该方法包括产生预处理和后处理测量数据点，其通过以一组取向和距离基板的几何中心的一组距离测量薄膜基板的厚度来执行。 该方法还包括比较预处理和后处理测量数据点以计算一组蚀刻深度数。 该方法还包括产生该组取向的蚀刻轮廓。 该方法还包括从蚀刻轮廓推断与第一蚀刻深度相关联的一组半径。 该方法还包括生成偏心图，其是该组半径与该组取向的图形表示。 更多的方法包括通过对偏心图应用曲线拟合方程来计算过程中心。

公开(公告)号：WO2008042581A3

公开(公告)日：2008-10-09

申请号：PCT/US2007078578

申请日：2007-09-14

Applicant: LAM RES CORP ,  CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

Inventor： CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

IPC: G03B15/00 ,  B08B7/00 ,  B41B17/00 ,  G01B11/00 ,  G01B11/02 ,  G01N21/00 ,  G01R31/26 ,  G03B15/02 ,  G03B15/03

CPC classification number: H01L21/681 ,  H01L21/67259 ,  H01L21/67288

Abstract: A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.

Abstract translation: 提供了用于捕获衬底图像的斜角检查模块。 该模块包括旋转马达，该旋转马达连接到衬底卡盘并且被配置为旋转衬底卡盘从而允许衬底旋转。 该模块还包括照相机和光学外壳，该照相机和光学外壳连接到照相机并且被配置成旋转，使得光被引导朝向基板。 照相机从照相机安装架安装，照相机安装架被配置成使照相机能够在180度平面上旋转，从而允许照相机捕获衬底的顶视图，底视图和侧视图中的至少一个的图像。 该模块还包括背光装置，该背光装置被配置为向基板提供照明，由此使得照相机能够捕捉图像，该图像示出了基板与背景之间的对比。

公开(公告)号：WO2008024792B1

公开(公告)日：2008-06-12

申请号：PCT/US2007076444

申请日：2007-08-21

Applicant: LAM RES CORP ,  KIM YUNSANG ,  BAILEY III ANDREW ,  CHEN JACK

Inventor： KIM YUNSANG ,  BAILEY III ANDREW ,  CHEN JACK

IPC: H01L21/02 ,  G03F7/42 ,  H01L21/00 ,  H01L21/311

CPC classification number: H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

Abstract: A method for etching a bevel edge of a substrate is provided. A patterned photoresist mask is formed over the etch layer. The bevel edge is cleaned comprising providing a cleaning gas comprising at least one of a CO 2 , CO, C x H y , H 2 , NH 3 , C x H y F z and a combination thereof, forming a cleaning plasma from the cleaning gas, and exposing the bevel edge to the cleaning plasma. Features are etched into the etch layer through the photoresist features and the photoresist mask is removed.

Abstract translation: 提供了一种用于蚀刻衬底的斜面边缘的方法。 在蚀刻层上形成图案化的光刻胶掩模。 清洁斜面边缘包括提供清洁气体，所述清洁气体包括CO 2，CO，C _{H y ，H 2 ，NH 3 ， x h y f z 及其组合， 来自清洁气体的清洁等离子体，并且将斜面边缘暴露于清洁等离子体。 通过光刻胶特征将特征蚀刻到蚀刻层中，并且去除光刻胶掩模。}

公开(公告)号：WO2009043018A3

公开(公告)日：2009-09-11

申请号：PCT/US2008078145

申请日：2008-09-29

Applicant: LAM RES CORP ,  CHEN JACK ,  BAILEY III ANDREW D ,  MOORING BEN ,  CAIN STEPHEN J

Inventor： CHEN JACK ,  BAILEY III ANDREW D ,  MOORING BEN ,  CAIN STEPHEN J

IPC: H01L21/68 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/681 ,  H01L21/68

Abstract: A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot, which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.

Abstract translation: 提供了一种将基板对准支撑机构的处理中心的方法。 该方法包括在基板处理之后确定基板厚度，该基板在多个取向并且距离基板的几何中心的多个径向距离处。 该方法还包括从衬底厚度和工艺持续时间导出一组工艺速率值。 该方法还包括为处理速率创建偏心图，其表示基本上同心的圆，其点是具有基本上第一处理速率的偏心图的圆周。 该方法还包括将曲线拟合方程应用于偏心图以确定一组参数。 该方法还包括向一组机器人手臂提供该组参数，从而使得该组机器人臂将由支撑机构支撑的另一基板与处理中心对准。

公开(公告)号：WO2008082923A3

公开(公告)日：2008-11-27

申请号：PCT/US2007087673

申请日：2007-12-14

Applicant: LAM RES CORP ,  KIM YUNSANG ,  CHEN JACK ,  FANG TONG ,  BAILEY III ANDREW

Inventor： KIM YUNSANG ,  CHEN JACK ,  FANG TONG ,  BAILEY III ANDREW

IPC: H01L21/461

CPC classification number: H01J37/32706 ,  H01J37/32532 ,  H01J37/32623 ,  H01L21/02087 ,  H01L21/0209 ,  H01L21/67069

Abstract: Methods and apparatus for remedying arc-related damage to the substrate during plasma bevel etching. A plasma shield is disposed above the substrate to prevent plasma, which is generated in between two annular grounded plates, from reaching the exposed metallization on the substrate. Additionally or alternatively, a carbon-free fluorinated process source gas may be employed and/or the RF bias power may be ramped up gradually during plasma generation to alleviate arc-related damage during bevel etching. Also additionally or alternatively, helium and/or hydrogen may be added to the process source gas to alleviate arc-related damage during bevel etching.

Abstract translation: 在等离子体斜面蚀刻期间用于补救对基板的电弧相关损伤的方法和装置。 等离子体屏蔽设置在衬底之上，以防止在两个环形接地板之间产生的等离子体到达衬底上暴露的金属化。 另外或替代地，可以采用无碳氟化处理源气体和/或在等离子体产生期间逐渐斜升RF偏置功率，以减轻斜面蚀刻期间的电弧相关损伤。 另外或替代地，可以将氦和/或氢加入到工艺源气体中以减轻斜面蚀刻期间的电弧相关损伤。

公开(公告)号：WO2011084337A3

公开(公告)日：2011-09-09

申请号：PCT/US2010059585

申请日：2010-12-08

Applicant: LAM RES CORP ,  CHEN JACK ,  KIM YUNSANG

Inventor： CHEN JACK ,  KIM YUNSANG

IPC: H01L21/3065

CPC classification number: H01L21/02274 ,  C23C16/0245 ,  C23C16/04 ,  C23C16/509 ,  H01L21/02087 ,  H01L21/02115 ,  H01L21/3083 ,  H01L21/31144

Abstract: A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.

Abstract translation: 提供了一种用于处理斜面边缘的方法和装置。 将衬底放置在斜角加工室中，并且使用限制在斜角加工室的外围区域中的钝化等离子体仅在衬底的斜面区域周围在衬底上形成钝化层。 衬底可以经历随后的半导体工艺，在此期间衬底的斜面边缘区域被钝化层保护。 可选地，钝化层可以使用在处理室的外围区域中形成的图案化等离子体来图案化，图案化等离子体通过增加等离子体约束而被限制。 在斜角区域的外边缘部分上的钝化层被去除，而在斜角区域的内部上的钝化层被保持。 可以使用图案化的钝化层作为保护掩模来清洁衬底的斜面边缘。

公开(公告)号：WO2009137279A3

公开(公告)日：2010-02-04

申请号：PCT/US2009041730

申请日：2009-04-24

Applicant: LAM RES CORP ,  WONG SCOTT ,  LIN JEFFREY ,  BAILEY ANDREW D III ,  CHEN JACK ,  MOORING BENJAMIN W ,  HUANG CHUNG HO

Inventor： WONG SCOTT ,  LIN JEFFREY ,  BAILEY ANDREW D III ,  CHEN JACK ,  MOORING BENJAMIN W ,  HUANG CHUNG HO

IPC: H01L21/68

CPC classification number: H01L21/68

Abstract: Methods and systems to optimize wafer placement repeatability in semiconductor manufacturing equipment using a controlled series of wafer movements are provided. In one embodiment, a preliminary station calibration is performed to teach a robot position for each station interfaced to facets of a vacuum transfer module used in semiconductor manufacturing. The method also calibrates the system to obtain compensation parameters that take into account the station where the wafer is to be placed, position of sensors in each facet, and offsets derived from performing extend and retract operations of a robot arm. In another embodiment where the robot includes two arms, the method calibrates the system to compensate for differences derived from using one arm or the other. During manufacturing, the wafers are placed in the different stations using the compensation parameters.

Abstract translation: 提供了使用受控系列的晶片移动来优化半导体制造设备中的晶片布置重复性的方法和系统。 在一个实施例中，执行初步站校准以教导与用于半导体制造中的真空传递模块的面连接的每个站的机器人位置。 该方法还校准系统以获得考虑要放置晶片的工位的位置的补偿参数，每个面中的传感器的位置以及执行机器人臂的延伸和缩回操作导出的偏移。 在机器人包括两个臂的另一实施例中，该方法校准系统以补偿从使用一个臂或另一个臂导出的差异。 在制造期间，使用补偿参数将晶片放置在不同的台中。

公开(公告)号：WO2008042581B1

公开(公告)日：2008-12-11

申请号：PCT/US2007078578

申请日：2007-09-14

Applicant: LAM RES CORP ,  CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

Inventor： CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

IPC: G03B15/00 ,  B08B7/00 ,  B41B17/00 ,  G01B11/00 ,  G01B11/02 ,  G01N21/00 ,  G01R31/26 ,  G03B15/02 ,  G03B15/03

CPC classification number: H01L21/681 ,  H01L21/67259 ,  H01L21/67288

Abstract: A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.

Abstract translation: 提供了一种用于捕获基板的图像的斜面检查模块。 模块包括旋转马达，其连接到基板卡盘并且构造成旋转基板卡盘，从而允许基板旋转。 该模块还包括照相机和光学外壳，其附接到相机并且被配置为旋转，使得光能够被引向基板。 照相机从照相机安装座安装，照相机安装件被配置为使照相机能够在180度平面上旋转，允许照相机拍摄基板的俯视图，底视图和侧视图中的至少一个的图像。 该模块还包括背光布置，其被配置为向基板提供照明，从而使得相机能够捕获显示基板和背景之间的对比度的图像。

公开(公告)号：SG10201800418RA

公开(公告)日：2018-02-27

申请号：SG10201800418R

申请日：2014-07-18

Applicant: LAM RES CORP

Inventor： KIM KEECHAN ,  CHEN JACK ,  KIM YUNSANG ,  DELFIN KENNETH GEORGE

Abstract: A lower electrode plate receives radiofrequency power. A first upper plate is positioned parallel to and spaced apart from the lower electrode plate. A grounded second upper plate is positioned next to the first upper plate. A dielectric support provides support of a workpiece within a region between the lower electrode plate and the first upper plate. A purge gas is supplied at a central location of the first upper plate. A process gas is supplied to a periphery of the first upper plate. The dielectric support positions the workpiece proximate and parallel to the first upper plate, such that the purge gas flows over a top surface of the workpiece so as to prevent the process gas from flowing over the top surface of the workpiece, and so as to cause the process gas to flow around a peripheral edge of the workpiece and below the workpiece.

公开(公告)号：SG180881A1

公开(公告)日：2012-07-30

申请号：SG2012035663

申请日：2010-12-08

Applicant: LAM RES CORP

Inventor： CHEN JACK ,  KIM YUNSANG

Abstract: A method and apparatus for processing a bevel edge is provided. A substrate is placed in a bevel processing chamber and a passivation layer is formed on the substrate only around a bevel region of the substrate using a passivation plasma confined in a peripheral region of the bevel processing chamber. The substrate may undergo a subsequent semiconductor process, during which the bevel edge region of the substrate is protected by the passivation layer. Alternatively, the passivation layer may be patterned using a patterning plasma formed in an outer peripheral region of the processing chamber, the patterning plasma being confined by increasing plasma confinement. The passivation layer on outer edge portion of the bevel region is removed, while the passivation layer on an inner portion of the bevel region is maintained. The bevel edge of the substrate may be cleaned using the patterned passivation layer as a protective mask.