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    프로세싱 챔버의 세정 프로세스 동안 에지 링 포커싱된 증착
    1.
    发明公开
    프로세싱 챔버의 세정 프로세스 동안 에지 링 포커싱된 증착 审中-公开

    公开(公告)号：KR20200142587A

    公开(公告)日：2020-12-22

    申请号：KR20207034939

    申请日：2019-05-02

    Applicant: LAM RES CORP

    Inventor： JIN YANSHA ,  TAN ZHONGKUI ,  KENT TYLER ,  YAN HAOQUAN ,  FU QIAN ,  CONTRERAS ANTHONY

    IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67

    Abstract: 프로세싱챔버에서세정프로세스를수행하는방법은프로세싱챔버의기판지지부상에배치된기판없이, 기판지지부의에지링 상에코팅의증착을달성하도록가스분배디바이스의측벽튜닝홀들을통해측벽가스플로우에반응물질가스들을공급하는단계를포함한다. 측벽가스플로우는에지링 위의프로세싱챔버의외측영역을타깃팅하고, 반응물질가스들은제 1 플로우레이트로공급된다. 방법은측벽튜닝홀들을통해반응물질가스들을공급하는동안, 가스분배디바이스의중심홀들을통해중심가스플로우에불활성가스들을공급하는단계를더 포함한다. 불활성가스들은제 1 플로우레이트보다큰 제 2 플로우레이트로공급된다.

    PULSED BIAS PLASMA PROCESS TO CONTROL MICROLOADING
    3.
    发明申请
    PULSED BIAS PLASMA PROCESS TO CONTROL MICROLOADING 审中-公开
    脉冲偏压等离子体工艺控制微粘附

    公开(公告)号：WO2009073361A4

    公开(公告)日：2009-08-06

    申请号：PCT/US2008083942

    申请日：2008-11-18

    Applicant: LAM RES CORP ,  LEE WONCHUL ,  FU QIAN ,  LIU SHENJIAN ,  PU BRIAN

    Inventor： LEE WONCHUL ,  FU QIAN ,  LIU SHENJIAN ,  PU BRIAN

    IPC: H01L21/3065

    CPC classification number: H01L21/32136

    Abstract: A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas.

    Abstract translation: 提供了通过具有更宽和更窄特征的掩模蚀刻导电层的方法。 稳态腐蚀气体流动。 提供稳态RF功率以从蚀刻气体形成等离子体。 在稳态蚀刻气体流动期间提供脉冲偏置电压，其中脉冲偏置电压具有1至10,000Hz之间的频率。 使用由蚀刻气体形成的等离子体将更宽和更窄的特征蚀刻到导电层中。

    SILICON OXIDE SILICON NITRIDE STACK STAIR STEP ETCH
    6.
    发明专利
    SILICON OXIDE SILICON NITRIDE STACK STAIR STEP ETCH 未知

    公开(公告)号：SG11202004796PA

    公开(公告)日：2020-06-29

    申请号：SG11202004796P

    申请日：2018-11-29

    Applicant: LAM RES CORP

    Inventor： QIN CE ,  TAN ZHONGKUI ,  FU QIAN ,  LEE SAM DO

    IPC: H01L21/311 ,  H01L21/033 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/32

    Abstract: A method for forming a stair-step structure in a stack on a substrate is provided. The method comprises at least one stair step cycle. Each stair step cycle comprises trimming the mask and etching the stack. Etching the stack is provided in a plurality of cycles wherein each cycle comprises etching a SiO2 layer and etching a SiN layer. Etching a SiO2 layer comprises flowing a SiO2 etching gas into the plasma processing chamber, wherein the SiO2 etching gas comprises a hydrofluorocarbon, an inert bombardment gas, and at least one of SF6 and NF3, generating a plasma from the SiO2 etching gas, providing a bias, and stopping the SiO2 layer etch. The etching a SiN layer comprises flowing a SiN etching gas into the plasma processing chamber, comprising a hydrofluorocarbon and oxygen, generating a plasma from the SiN etching gas, providing a bias, and stopping the SiN layer etch.

    ETCH PROCESS WITH PRE-ETCH TRANSIENT CONDITIONING
    8.
    发明专利
    ETCH PROCESS WITH PRE-ETCH TRANSIENT CONDITIONING 未知

    公开(公告)号：SG2013093034A

    公开(公告)日：2014-07-30

    申请号：SG2013093034

    申请日：2013-12-13

    Applicant: LAM RES CORP

    Inventor： LEE WONCHUL ,  FU QIAN ,  DREWERY JOHN S

    Abstract: A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration and etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence.

    NEAR-SUBSTRATE SUPPLEMENTAL PLASMA DENSITY GENERATION WITH LOW BIAS VOLTAGE WITHIN INDUCTIVELY COUPLED PLASMA PROCESSING CHAMBER
    9.
    发明专利
    NEAR-SUBSTRATE SUPPLEMENTAL PLASMA DENSITY GENERATION WITH LOW BIAS VOLTAGE WITHIN INDUCTIVELY COUPLED PLASMA PROCESSING CHAMBER 未知

    公开(公告)号：SG11201906618YA

    公开(公告)日：2019-08-27

    申请号：SG11201906618Y

    申请日：2017-10-20

    Applicant: LAM RES CORP

    Inventor： TAN ZHONGKUI ,  ZHANG YITING ,  FU QIAN ,  XU QING ,  WU YING ,  SRIRAMAN SARAVANAPRIYAN ,  PATERSON ALEX

    IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H05H1/46

    Abstract: WO 18/ 136 121 Al Fig. 4 Primary RF Generator Matching Circuit j — 127 100 121 71 721 71 71 771 1 7 1 7 409 Control System LU - -- ----- - -_ 102 102 103 i 103 • -I I j_4110197 11 1 - 107 X113 al 109 — 403 j — 407 Matching Matching Circuit Circuit 401 Supplemental j 405 Plasma Bias RF Density RF Generator Generato 101 123 125 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 26 July 2018 (26.07.2018) W I P 0 I PCT omit VIII °nolo VIII VIII oimIE (10) International Publication Number WO 2018/136121 Al (51) International Patent Classification: H01L 21/3065 (2006.01) HO5H 1/46 (2006.01) H01J 37/32 (2006.01) H01L 21/67 (2006.01) (21) International Application Number: PCT/US2017/057728 (22) International Filing Date: 20 October 2017 (20.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/408,326 17 January 2017 (17.01.2017) US (71) Applicant: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, Fremont, CA 94538 (US). (72) Inventors: TAN, Zhongkui; 4650 Cushing Parkway, Fre- mont, CA 94538 (US). ZHANG, Yiting; 4650 Cushing Parkway, Fremont, CA 94538 (US). FU, Qian; 4650 Cush- ing Parkway, Fremont, CA 94538 (US). XU, Qing; 4650 Cushing Parkway, Fremont, CA 94538 (US). WU, Ying; 4650 Cushing Parkway, Fremont, CA 94538 (US). SRIRA- MAN, Saravanapriyan; 4650 Cushing Parkway, Fremont, CA 94538 (US). PATERSON, Alex; 4650 Cushing Park- way, Fremont, CA 94538 (US). (74) Agent: WRIGHT, Kenneth, D. et al.; Martine Penilla Group, LLP, 710 Lakeway Drive, Suite 200, Sunnyvale, CA 94085 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, (54) Title: NEAR-SUBSTRATE SUPPLEMENTAL PLASMA DENSITY GENERATION WITH LOW BIAS VOLTAGE WITHIN INDUCTIVELY COUPLED PLASMA PROCESSING CHAMBER (57) : A substrate is positioned on a substrate support structure with- in a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode with- in the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequen- cy signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate. [Continued on next page] WO 2018/136121 Al IIMEDIM000101011EIEMM0M01111011H111110101111110110111111 TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))

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