公开(公告)号：WO2012173769A3

公开(公告)日：2014-05-15

申请号：PCT/US2012039752

申请日：2012-05-25

Applicant: LAM RES CORP ,  LONG MAOLIN ,  PATERSON ALEX ,  MARSH RICHARD ,  WU YING

Inventor： LONG MAOLIN ,  PATERSON ALEX ,  MARSH RICHARD ,  WU YING

IPC: H01L21/3065

CPC classification number: H01J37/32651 ,  H01J37/321 ,  H01J37/32697 ,  H01L21/6831

Abstract: A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.

Abstract translation: 提供等离子体处理室和操作室的方法。 示例性室包括用于接收基板的静电卡盘和连接到腔室顶部的电介质窗口。 电介质窗口的内侧面对位于静电卡盘上方的等离子体处理区域，并且电介质窗口的外侧在等离子体处理区域的外部。 内部和外部线圈设置在电介质窗口的外侧上方，并且内部和外部线圈连接到第一RF电源。 电力网格设置在电介质窗口的外侧和内部和外部线圈之间。 电网连接到独立于第一RF电源的第二RF电源。

公开(公告)号：SG10201708121VA

公开(公告)日：2017-11-29

申请号：SG10201708121V

申请日：2014-04-04

Applicant: LAM RES CORP

Inventor： PATERSON ALEX ,  SINGH HARMEET ,  MARSH RICHARD A ,  LILL THORSTEN ,  VAHEDI VAHID ,  WU YING ,  SRIRAMAN SARAVANAPRIYAN

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

公开(公告)号：SG10201401254VA

公开(公告)日：2014-11-27

申请号：SG10201401254V

申请日：2014-04-04

Applicant: LAM RES CORP

Inventor： PATERSON ALEX ,  SINGH HARMEET ,  MARSH RICHARD A ,  LILL THORSTEN ,  VAHEDI VAHID ,  WU YING ,  SRIRAMAN SARAVANAPRIYAN

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

公开(公告)号：SG11202001658YA

公开(公告)日：2020-03-30

申请号：SG11202001658Y

申请日：2018-08-23

Applicant: LAM RES CORP

Inventor： SHOEB JULINE ,  WU YING ,  PATERSON ALEX

IPC: H01J37/32

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

公开(公告)号：SG11201906618YA

公开(公告)日：2019-08-27

申请号：SG11201906618Y

申请日：2017-10-20

Applicant: LAM RES CORP

Inventor： TAN ZHONGKUI ,  ZHANG YITING ,  FU QIAN ,  XU QING ,  WU YING ,  SRIRAMAN SARAVANAPRIYAN ,  PATERSON ALEX

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H05H1/46

Abstract: WO 18/ 136 121 Al Fig. 4 Primary RF Generator Matching Circuit j — 127 100 121 71 721 71 71 771 1 7 1 7 409 Control System LU - -- ----- - -_ 102 102 103 i 103 • -I I j_4110197 11 1 - 107 X113 al 109 — 403 j — 407 Matching Matching Circuit Circuit 401 Supplemental j 405 Plasma Bias RF Density RF Generator Generato 101 123 125 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 26 July 2018 (26.07.2018) W I P 0 I PCT omit VIII °nolo VIII VIII oimIE (10) International Publication Number WO 2018/136121 Al (51) International Patent Classification: H01L 21/3065 (2006.01) HO5H 1/46 (2006.01) H01J 37/32 (2006.01) H01L 21/67 (2006.01) (21) International Application Number: PCT/US2017/057728 (22) International Filing Date: 20 October 2017 (20.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/408,326 17 January 2017 (17.01.2017) US (71) Applicant: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, Fremont, CA 94538 (US). (72) Inventors: TAN, Zhongkui; 4650 Cushing Parkway, Fre- mont, CA 94538 (US). ZHANG, Yiting; 4650 Cushing Parkway, Fremont, CA 94538 (US). FU, Qian; 4650 Cush- ing Parkway, Fremont, CA 94538 (US). XU, Qing; 4650 Cushing Parkway, Fremont, CA 94538 (US). WU, Ying; 4650 Cushing Parkway, Fremont, CA 94538 (US). SRIRA- MAN, Saravanapriyan; 4650 Cushing Parkway, Fremont, CA 94538 (US). PATERSON, Alex; 4650 Cushing Park- way, Fremont, CA 94538 (US). (74) Agent: WRIGHT, Kenneth, D. et al.; Martine Penilla Group, LLP, 710 Lakeway Drive, Suite 200, Sunnyvale, CA 94085 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, (54) Title: NEAR-SUBSTRATE SUPPLEMENTAL PLASMA DENSITY GENERATION WITH LOW BIAS VOLTAGE WITHIN INDUCTIVELY COUPLED PLASMA PROCESSING CHAMBER (57) : A substrate is positioned on a substrate support structure with- in a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode with- in the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequen- cy signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate. [Continued on next page] WO 2018/136121 Al IIMEDIM000101011EIEMM0M01111011H111110101111110110111111 TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))