公开(公告)号：KR20200142587A

公开(公告)日：2020-12-22

申请号：KR20207034939

申请日：2019-05-02

Applicant: LAM RES CORP

Inventor： JIN YANSHA ,  TAN ZHONGKUI ,  KENT TYLER ,  YAN HAOQUAN ,  FU QIAN ,  CONTRERAS ANTHONY

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67

Abstract: 프로세싱챔버에서세정프로세스를수행하는방법은프로세싱챔버의기판지지부상에배치된기판없이, 기판지지부의에지링 상에코팅의증착을달성하도록가스분배디바이스의측벽튜닝홀들을통해측벽가스플로우에반응물질가스들을공급하는단계를포함한다. 측벽가스플로우는에지링 위의프로세싱챔버의외측영역을타깃팅하고, 반응물질가스들은제 1 플로우레이트로공급된다. 방법은측벽튜닝홀들을통해반응물질가스들을공급하는동안, 가스분배디바이스의중심홀들을통해중심가스플로우에불활성가스들을공급하는단계를더 포함한다. 불활성가스들은제 1 플로우레이트보다큰 제 2 플로우레이트로공급된다.

公开(公告)号：SG11202007304WA

公开(公告)日：2020-08-28

申请号：SG11202007304W

申请日：2019-01-28

Applicant: LAM RES CORP

Inventor： QIN CE ,  TAN ZHONGKUI ,  MAO YISHA ,  JIN YANSHA ,  FAUCETT AUSTIN CASEY

IPC: H01L21/02 ,  H01L21/3065

Abstract: A method for opening an amorphous carbon layer mask below a hardmask is provided. The opening an amorphous carbon layer mask comprises performing one or more cycles, where each cycle comprises an amorphous carbon layer mask opening phase and a cleaning phase. The amorphous carbon layer mask opening phase comprises flowing an opening gas into a plasma processing chamber, wherein the opening gas comprises an oxygen containing component, creating a plasma from the opening gas, which etches features in the amorphous carbon layer mask, and stopping the flow of the opening gas. The cleaning phase comprises flowing a cleaning gas into the plasma processing chamber, wherein the cleaning gas comprises a hydrogen containing component, a carbon containing component, and a halogen containing component, creating a plasma from the cleaning gas; and stopping the flow of the cleaning gas into the plasma processing chamber.

公开(公告)号：SG11202004796PA

公开(公告)日：2020-06-29

申请号：SG11202004796P

申请日：2018-11-29

Applicant: LAM RES CORP

Inventor： QIN CE ,  TAN ZHONGKUI ,  FU QIAN ,  LEE SAM DO

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/32

Abstract: A method for forming a stair-step structure in a stack on a substrate is provided. The method comprises at least one stair step cycle. Each stair step cycle comprises trimming the mask and etching the stack. Etching the stack is provided in a plurality of cycles wherein each cycle comprises etching a SiO2 layer and etching a SiN layer. Etching a SiO2 layer comprises flowing a SiO2 etching gas into the plasma processing chamber, wherein the SiO2 etching gas comprises a hydrofluorocarbon, an inert bombardment gas, and at least one of SF6 and NF3, generating a plasma from the SiO2 etching gas, providing a bias, and stopping the SiO2 layer etch. The etching a SiN layer comprises flowing a SiN etching gas into the plasma processing chamber, comprising a hydrofluorocarbon and oxygen, generating a plasma from the SiN etching gas, providing a bias, and stopping the SiN layer etch.

公开(公告)号：SG11201906618YA

公开(公告)日：2019-08-27

申请号：SG11201906618Y

申请日：2017-10-20

Applicant: LAM RES CORP

Inventor： TAN ZHONGKUI ,  ZHANG YITING ,  FU QIAN ,  XU QING ,  WU YING ,  SRIRAMAN SARAVANAPRIYAN ,  PATERSON ALEX

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H05H1/46

Abstract: WO 18/ 136 121 Al Fig. 4 Primary RF Generator Matching Circuit j — 127 100 121 71 721 71 71 771 1 7 1 7 409 Control System LU - -- ----- - -_ 102 102 103 i 103 • -I I j_4110197 11 1 - 107 X113 al 109 — 403 j — 407 Matching Matching Circuit Circuit 401 Supplemental j 405 Plasma Bias RF Density RF Generator Generato 101 123 125 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 26 July 2018 (26.07.2018) W I P 0 I PCT omit VIII °nolo VIII VIII oimIE (10) International Publication Number WO 2018/136121 Al (51) International Patent Classification: H01L 21/3065 (2006.01) HO5H 1/46 (2006.01) H01J 37/32 (2006.01) H01L 21/67 (2006.01) (21) International Application Number: PCT/US2017/057728 (22) International Filing Date: 20 October 2017 (20.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/408,326 17 January 2017 (17.01.2017) US (71) Applicant: LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, Fremont, CA 94538 (US). (72) Inventors: TAN, Zhongkui; 4650 Cushing Parkway, Fre- mont, CA 94538 (US). ZHANG, Yiting; 4650 Cushing Parkway, Fremont, CA 94538 (US). FU, Qian; 4650 Cush- ing Parkway, Fremont, CA 94538 (US). XU, Qing; 4650 Cushing Parkway, Fremont, CA 94538 (US). WU, Ying; 4650 Cushing Parkway, Fremont, CA 94538 (US). SRIRA- MAN, Saravanapriyan; 4650 Cushing Parkway, Fremont, CA 94538 (US). PATERSON, Alex; 4650 Cushing Park- way, Fremont, CA 94538 (US). (74) Agent: WRIGHT, Kenneth, D. et al.; Martine Penilla Group, LLP, 710 Lakeway Drive, Suite 200, Sunnyvale, CA 94085 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, (54) Title: NEAR-SUBSTRATE SUPPLEMENTAL PLASMA DENSITY GENERATION WITH LOW BIAS VOLTAGE WITHIN INDUCTIVELY COUPLED PLASMA PROCESSING CHAMBER (57) : A substrate is positioned on a substrate support structure with- in a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. A second radiofrequency signal is supplied from a second radiofrequency signal generator to an electrode with- in the substrate support structure. The first and second radiofrequency signal generators are controlled independent of each other. The second radiofrequen- cy signal has a frequency greater than or equal to about 27 megaHertz. The second radiofrequency signal generates supplemental plasma density at a level of the substrate within the plasma processing volume while generating a bias voltage of less than about 200 volts at the level of the substrate. [Continued on next page] WO 2018/136121 Al IIMEDIM000101011EIEMM0M01111011H111110101111110110111111 TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))