公开(公告)号：WO2013088324A3

公开(公告)日：2015-08-13

申请号：PCT/IB2012057128

申请日：2012-12-10

Applicant: LAM RES CORP ,  LAM RES AG

Inventor： LI SIYI ,  HEFTY ROBERT ,  ROBSON MARK TODHUNTER ,  BOWERS JAMES R ,  AUDREY CHARLES

IPC: H01L21/3065

CPC classification number: H01L21/32137 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116

Abstract: A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etchgas, wherein the silicon etch gas comprises SF6 or SiF4, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas.

Abstract translation: 提供了通过在等离子体处理室中的硅氧化物层上的硅层上的氮化硅层的堆叠的方法蚀刻特征。 在等离子体处理室中蚀刻氮化硅层，包括： 流动氮化硅蚀刻气体; 将氮化硅蚀刻气体形成等离子体以蚀刻氮化硅层，并停止氮化硅蚀刻气体的流动。 硅层包括流动硅蚀刻气体，其中硅蚀刻气体包括SF 6或SiF 4，将硅蚀刻气体形成硅并且阻止硅蚀刻气体的流动。 在等离子体处理室中蚀刻氧化硅层，包括使氧化硅蚀刻气体流动，将氧化硅蚀刻气体形成等离子体，并停止氧化硅蚀刻气体的流动。

公开(公告)号：EP1827871A4

公开(公告)日：2009-09-16

申请号：EP05854301

申请日：2005-12-15

Applicant: LAM RES CORP

Inventor： LUPAN MICHELLE ,  HEFTY ROBERT ,  KELLY MICHAEL ,  MAGNI ENRICO

IPC: B44C1/22

CPC classification number: B08B7/0035 ,  H01J37/32 ,  H01J37/32862

公开(公告)号：WO2006071556A2

公开(公告)日：2006-07-06

申请号：PCT/US2005045541

申请日：2005-12-15

Applicant: LAM RES CORP ,  MAGNI ENRICO ,  KELLY MICHAEL ,  HEFTY ROBERT ,  LUPAN MICHELLE

Inventor： MAGNI ENRICO ,  KELLY MICHAEL ,  HEFTY ROBERT ,  LUPAN MICHELLE

IPC: C23F1/00 ,  B44C1/22 ,  C03C25/68 ,  C23F3/00

CPC classification number: B08B7/0035 ,  H01J37/32 ,  H01J37/32862

Abstract: Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.

Abstract translation: 提供了从等离子体处理室的上电极的等离子体暴露表面去除黑色硅或黑色碳化硅的方法。 所述方法包括使用含有含氟气体的气体组合物形成等离子体，并用等离子体从表面除去黑色硅或黑色碳化硅。 除了上电极之外，这些方法还可以从室中的部件的表面除去黑色硅或黑色碳化硅。

公开(公告)号：WO2006049954A2

公开(公告)日：2006-05-11

申请号：PCT/US2005038373

申请日：2005-10-26

Applicant: LAM RES CORP ,  CHEN WAN-LIN ,  TAKESHITA KENJI ,  ASO TSUYOSHI ,  KAWAGUCHI SEIJI ,  MCCLARD THOMAS ,  MAGNI ENRICO ,  KELLY MICHAEL ,  LUPAN MICHELLE ,  HEFTY ROBERT

Inventor： CHEN WAN-LIN ,  TAKESHITA KENJI ,  ASO TSUYOSHI ,  KAWAGUCHI SEIJI ,  MCCLARD THOMAS ,  MAGNI ENRICO ,  KELLY MICHAEL ,  LUPAN MICHELLE ,  HEFTY ROBERT

IPC: B44C1/22 ,  B08B6/00 ,  H01L21/311

CPC classification number: B08B7/0035 ,  B05D1/62 ,  H01J37/32559 ,  H01L21/31116

Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.

Abstract translation: 提供了在等离子体处理室的硅或碳化硅电极上形成保护性聚合物涂层的方法。 相对于暴露于等离子体和气态反应物的组分，聚合物涂层为电极的下表面提供保护。 可以在清洁室的过程中或在用于蚀刻室中的半导体衬底的工艺期间执行这些方法。