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1.发明公开METHODS FOR REMOVING BLACK SILICON AND BLACK SILICON CARBIDE FROM SURFACES OF SILICON AND SILICON CARBIDE ELECTRODES FOR PLASMA PROCESSING APPARATUSES 有权法黑硅和黑碳化硅硅表面和SILIZIUMCARBIDELEKTRODEN的等离子处理设备上删除
公开(公告)号：EP1827871A4
公开(公告)日：2009-09-16
申请号：EP05854301
申请日：2005-12-15
Applicant: LAM RES CORP
Inventor： LUPAN MICHELLE , HEFTY ROBERT , KELLY MICHAEL , MAGNI ENRICO
IPC: B44C1/22
CPC classification number: B08B7/0035 , H01J37/32 , H01J37/32862
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2.发明申请METHODS FOR REMOVING BLACK SILICON AND BLACK SILICON CARBIDE FROM SURFACES OF SILICON AND SILICON CARBIDE ELECTRODES FOR PLASMA PROCESSING APPARATUSES 审中-公开用于等离子体处理装置的硅和碳化硅电极表面去除黑色硅和碳黑碳黑的方法
公开(公告)号：WO2006071556A2
公开(公告)日：2006-07-06
申请号：PCT/US2005045541
申请日：2005-12-15
Applicant: LAM RES CORP , MAGNI ENRICO , KELLY MICHAEL , HEFTY ROBERT , LUPAN MICHELLE
Inventor： MAGNI ENRICO , KELLY MICHAEL , HEFTY ROBERT , LUPAN MICHELLE
CPC classification number: B08B7/0035 , H01J37/32 , H01J37/32862
Abstract: Methods for removing black silicon or black silicon carbide from a plasma-exposed surface of an upper electrode of a plasma processing chamber are provided. The methods include forming a plasma using a gas composition containing a fluorine-containing gas, and removing the black silicon or black silicon carbide from the surface with the plasma. The methods can also remove black silicon or black silicon carbide from surfaces of the components in the chamber in addition to the upper electrode.
Abstract translation: 提供了从等离子体处理室的上电极的等离子体暴露表面去除黑色硅或黑色碳化硅的方法。 所述方法包括使用含有含氟气体的气体组合物形成等离子体，并用等离子体从表面除去黑色硅或黑色碳化硅。 除了上电极之外，这些方法还可以从室中的部件的表面除去黑色硅或黑色碳化硅。
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3.发明申请METHODS FOR PROTECTING SILICON OR SILICON CARBIDE ELECTRODE SURFACES FROM MORPHOLOGICAL MODIFICATION DURING PLASMA ETCH PROCESSING 审中-公开在等离子体处理过程中从形态修饰中保护硅或碳化硅电极表面的方法
公开(公告)号：WO2006049954A2
公开(公告)日：2006-05-11
申请号：PCT/US2005038373
申请日：2005-10-26
Applicant: LAM RES CORP , CHEN WAN-LIN , TAKESHITA KENJI , ASO TSUYOSHI , KAWAGUCHI SEIJI , MCCLARD THOMAS , MAGNI ENRICO , KELLY MICHAEL , LUPAN MICHELLE , HEFTY ROBERT
Inventor： CHEN WAN-LIN , TAKESHITA KENJI , ASO TSUYOSHI , KAWAGUCHI SEIJI , MCCLARD THOMAS , MAGNI ENRICO , KELLY MICHAEL , LUPAN MICHELLE , HEFTY ROBERT
IPC: B44C1/22 , B08B6/00 , H01L21/311
CPC classification number: B08B7/0035 , B05D1/62 , H01J37/32559 , H01L21/31116
Abstract: Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.
Abstract translation: 提供了在等离子体处理室的硅或碳化硅电极上形成保护性聚合物涂层的方法。 相对于暴露于等离子体和气态反应物的组分，聚合物涂层为电极的下表面提供保护。 可以在清洁室的过程中或在用于蚀刻室中的半导体衬底的工艺期间执行这些方法。
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