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1.发明申请METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATIONS 审中-公开改进双层门控应用中的配置文件控制和N / P加载的方法
公开(公告)号：WO2004079783A3
公开(公告)日：2005-01-20
申请号：PCT/US2004005944
申请日：2004-02-26
Applicant: LAM RES CORP , DEL PUPPO HELENE , LIN FRANK , LEE CHRIS , VAHEDI VAHID , KAMP THOMAS A , MILLER ALAN J
Inventor： DEL PUPPO HELENE , LIN FRANK , LEE CHRIS , VAHEDI VAHID , KAMP THOMAS A , MILLER ALAN J
IPC: H01L21/3213 , H01L21/302
CPC classification number: H01L21/32137
Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
Abstract translation: 提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。 该方法开始于限定保护待蚀刻的多晶硅膜的图案。 然后，产生等离子体。 接下来，蚀刻大部分未被保护的多晶硅膜。 然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。 还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。
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2.发明公开METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATIONS 审中-公开法改善双掺杂的栅申请的轮廓控制和N / P LOAD的
公开(公告)号：EP1599894A4
公开(公告)日：2010-04-28
申请号：EP04715154
申请日：2004-02-26
Applicant: LAM RES CORP
Inventor： DEL PUPPO HELENE , LIN FRANK , LEE CHRIS , VAHEDI VAHID , KAMP THOMAS A , MILLER ALAN J
IPC: H01L21/3213 , H01L21/302
CPC classification number: H01L21/32137
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公开(公告)号：MY145493A
公开(公告)日：2012-02-29
申请号：MYPI20053959
申请日：2005-08-23
Applicant: LAM RES CORP
Inventor： PUPPO HELENE DEL , LIN FRANK , LEE CHRIS , VAHEDI VAHID , KAMP THOMAS A , MILLER ALAN J
IPC: H01L21/302
Abstract: A METHOD FOR ETCHING A POLYSILICON GATE STRUCTURE IN A PLASMA ETCH CHAMBER IS PROVIDED. THE METHOD INITIATES WITH DEFINING A PATTERN PROTECTING A POLYSILICON FILM TO BE ETCHED.THEN, A PLASMA IS GENERATED. NEXT, SUBSTANTIALLY ALL OF THE POLYSILICON FILM THAT IS UNPROTECTED IS ETCHED. THEN, A SILICON CONTAINING GAS IS INTRODUCED AND A REMAINDER OF THE POLYSILICON FILM IS ETCHED WHILE INTRODUCING A SILICON CONTAINING GAS. AN ETCH CHAMBER CONFIGURED TO INTRODUCE A SILICON CONTAINING GAS DURING AN ETCH PROCESS IS ALSO PROVIDED.
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