公开(公告)号：WO2004003963A3

公开(公告)日：2004-07-22

申请号：PCT/US0319366

申请日：2003-06-20

Applicant: LAM RES CORP ,  VAHEDI VAHID ,  LOEWENHARDT PETER ,  ELLINGBOE BERT ,  KUTHI ANDY ,  FISCHER ANDREAS

Inventor： VAHEDI VAHID ,  LOEWENHARDT PETER ,  ELLINGBOE BERT ,  KUTHI ANDY ,  FISCHER ANDREAS

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32082 ,  H01J37/32165

Abstract: A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.

Abstract translation: 处理工件的真空室中的等离子体由包括第一电极同时响应于第一和第二RF频率的功率的第一电极和直流接地第二电极之间的等离子体约束体积界定。 直流接地延伸部基本上与第一电极对准。 在第一频率处的相当大的功率百分比被耦合到包括第一和第二电极而不是扩展的路径，而在第二频率处的相当大的功率百分比耦合到包括第一电极和延伸的路径，而不是第二频率的路径 电极。 施加到第一电极的第一和第二频率处的相对功率的改变控制第一电极的直流偏置电压。

公开(公告)号：EP1599894A4

公开(公告)日：2010-04-28

申请号：EP04715154

申请日：2004-02-26

Applicant: LAM RES CORP

Inventor： DEL PUPPO HELENE ,  LIN FRANK ,  LEE CHRIS ,  VAHEDI VAHID ,  KAMP THOMAS A ,  MILLER ALAN J

IPC: H01L21/3213 ,  H01L21/302

CPC classification number: H01L21/32137

公开(公告)号：WO2007149210A3

公开(公告)日：2008-02-07

申请号：PCT/US2007013159

申请日：2007-06-05

Applicant: LAM RES CORP ,  SINGH HARMEET ,  COOPERBERG DAVID ,  VAHEDI VAHID

Inventor： SINGH HARMEET ,  COOPERBERG DAVID ,  VAHEDI VAHID

IPC: H01L21/02

CPC classification number: H01L21/6708 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137

Abstract: A method of etching a semiconductor substrate with improved critical dimension uniformity comprises supporting a semiconductor substrate on a substrate support in an inductively coupled plasma etch chamber; supplying a first etch gas to a central region over the semiconductor substrate; supplying a second gas comprising at least one silicon containing gas to a peripheral region over the semiconductor substrate surrounding the central region, wherein a concentration of silicon in the second gas is greater than a concentration of silicon in the first etch gas; generating plasma from the first etch gas and second gas; and plasma etching an exposed surface of the semiconductor substrate.

Abstract translation: 蚀刻具有改善的临界尺寸均匀性的半导体衬底的方法包括在电感耦合等离子体蚀刻室中的衬底支撑件上支撑半导体衬底; 向所述半导体衬底上的中心区域提供第一蚀刻气体; 将包含至少一种含硅气体的第二气体供应到围绕所述中心区域的所述半导体衬底上的周边区域，其中所述第二气体中的硅浓度大于所述第一蚀刻气体中的硅浓度; 从第一蚀刻气体和第二气体产生等离子体; 并且等离子体蚀刻半导体衬底的暴露表面。

公开(公告)号：WO03034463A3

公开(公告)日：2003-06-19

申请号：PCT/US0232057

申请日：2002-10-09

Applicant: LAM RES CORP ,  COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

Inventor： COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/50

CPC classification number: C23C16/45574 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3323 ,  H01J2237/3344

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates (13) such as semiconductor wafers. The system includes a plasma processing chamber (10), a substrate support (16) for supporting a substrate within the processing chamber, a dielectric member (20) having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a gas injector (22) fixed to part of or removably mounted in an opening in the dielectric window, the gas injector including a plurality of gas outlets supplying process gas at adjustable flow rates to multiple zones of the chamber, and an RF energy source (19) such as a planar or non-planar spiral coil (18) which inductively couples RF energy through the dielectric member and into the chamber to energize the process gas into a plasma state. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

Abstract translation: 一种用于等离子体处理系统的可调多区域注入系统，用于诸如半导体晶片的衬底（13）的等离子体处理。 该系统包括等离子体处理室（10），用于在处理室内支撑衬底的衬底支撑件（16），具有面向衬底支撑件的内表面的电介质构件（20），该电介质构件形成处理壁 腔室，固定到电介质窗口中的开口的一部分或可移除地安装在介电窗口中的开口中的气体注入器（22），气体注射器包括多个气体出口，其以可调节的流量向腔室的多个区域提供处理气体，并且RF能量 源极（19），例如平面或非平面螺旋线圈（18），其将RF能量通过电介质构件感应耦合并进入腔室，以将处理气体激励成等离子体状态。 喷射器可以包括轴向出口，其以第一流量向中心区域供应处理气体，并且离轴出口以相同的处理气体以第二流量供应到围绕中心区域的环形区域。 该装置允许气体输送的修改以通过允许独立调节气体流到腔室中的多个区域来满足特定处理状态的需要。 此外，与消耗式喷头装置相比，可以更容易且经济地更换可移除安装的气体喷射器。

公开(公告)号：WO2008049024B1

公开(公告)日：2008-06-05

申请号：PCT/US2007081682

申请日：2007-10-17

Applicant: LAM RES CORP ,  VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

Inventor： VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

IPC: H01L21/3065

CPC classification number: H01L21/32136 ,  C03C15/00 ,  C03C23/006 ,  H01J37/32623 ,  H01J37/32642

Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

Abstract translation: 在等离子体处理系统中，公开了调整一组等离子体处理步骤的方法。 该方法包括在等离子体处理系统的等离子体反应器中撞击包含中性粒子和离子的第一等离子体。 该方法还包括在第一蚀刻步骤中蚀刻衬底上的一组层; 将可移动均匀环定位在所述衬底周围，其中所述均匀环的底表面与所述衬底的顶表面的高度大致相同; 并在等离子体处理系统的等离子体反应器中撞击基本上由中性物质组成的第二等离子体。 该方法还包括在第二蚀刻步骤中蚀刻衬底上的该组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本均匀。

公开(公告)号：WO2006036753A3

公开(公告)日：2007-01-25

申请号：PCT/US2005034034

申请日：2005-09-21

Applicant: LAM RES CORP ,  VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

Inventor： VAHEDI VAHID ,  DAUGHERTY JOHN E ,  SINGH HARMEET ,  CHEN ANTHONY

IPC: B44C1/22 ,  C23F1/00 ,  H01L21/00

CPC classification number: C03C15/00 ,  C03C23/006 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/32136

Abstract: In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals (320a) and ions (320b) in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate (303); positioning a movable uniformity ring (302) around the substrate, including an opening (308) that is configured for directing species of plasma towards chuck (314), wherein, a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.

Abstract translation: 在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。 该方法包括在等离子体处理系统的等离子体反应器中击打包括中性粒子（320a）和离子（320b）的第一等离子体。 该方法还包括在第一蚀刻步骤中蚀刻在衬底（303）上的一组层; 将可移动均匀环（302）定位在所述基底周围，包括构造成用于将等离子体的种类引导到卡盘（314）的开口（308），其中，所述均匀环的底表面与顶表面大约相同的高度 的基底; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。 该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本均匀。

公开(公告)号：JP2010282970A

公开(公告)日：2010-12-16

申请号：JP2010135198

申请日：2010-06-14

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： VAHEDI VAHID ,  LOEWENHARDT PETER ,  ELLINGBOE BERT ,  KUTHI ANDY ,  FISCHER ANDREAS

IPC: H05H1/46 ,  C23C16/505 ,  C23C16/509 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32082 ,  H01J37/32165

Abstract: PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of carrying out desired independent control on plasma ion energy and plasma density. SOLUTION: The plasma treatment device includes: a vacuum chamber 10 equipped with a port for combining gas in the vacuum chamber 10, a first electrode 18 for applying an electric field on the gas in the vacuum chamber 10, and a second electrode 26 at a DC reference potential at an spacing from the first electrode 18, and made to excite the gas to plasma at an area including the volume between the electrodes 18, 26; and a circuit 70 for supplying to plasma at the same time the electric fields with different frequencies for the first electrode 18. The vacuum chamber 10 is so structured to make electric power with different frequencies take substantially different routes passing the area. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供能够对等离子体离子能量和等离子体密度进行所需的独立控制的等离子体处理装置。 解决方案：等离子体处理装置包括：真空室10，其配备有用于在真空室10中组合气体的端口，用于在真空室10中的气体上施加电场的第一电极18和第二电极 26处于与第一电极18间隔的DC参考电位处，并使气体在包括电极18,26之间的体积的区域处激发到等离子体; 以及电路70，用于同时向第一电极18提供具有不同频率的电场的等离子体。真空室10被构造成使得具有不同频率的电力采取通过该区域的基本不同的路线。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010187023A

公开(公告)日：2010-08-26

申请号：JP2010113921

申请日：2010-05-18

Applicant: Lam Res Corp ,  ラム リサーチ コーポレイション

Inventor： KAMP TOM A ,  GOTTSCHO RICHARD ,  LEE STEVE ,  LEE CHRIS ,  YAMAGUCHI YOKO ,  VAHEDI VAHID ,  EPPLER AARON

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/311 ,  H01L21/683 ,  H01L21/768

CPC classification number: H01L21/67248 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6831 ,  H01L21/76804

Abstract: PROBLEM TO BE SOLVED: To provide an etching method in which etching process controllability is improved. SOLUTION: An etching processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor for informing a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to keep the temperature of the chuck at a selectable setting temperature. A first setting temperature and a second setting temperature are selected. The wafer is placed on the chuck and set to the first setting temperature. The wafer is then processed at the first setting temperature for a first period of time and at the second setting temperature for a second period of time. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供蚀刻工艺可控性提高的蚀刻方法。 解决方案：用于蚀刻晶片的蚀刻处理器包括用于保持晶片的卡盘和用于通知晶片温度的温度传感器。 卡盘包括由温度控制系统控制的加热器。 温度传感器可操作地耦合到温度控制系统以将卡盘的温度保持在可选择的设定温度。 选择第一设定温度和第二设定温度。 将晶片放置在卡盘上并设定为第一设定温度。 然后将晶片在第一设定温度下处理第一时间段，并在第二设定温度下处理第二时间段。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2011081645A3

公开(公告)日：2011-10-20

申请号：PCT/US2010003149

申请日：2010-12-13

Applicant: LAM RES CORP ,  GAFF KEITH WILLIAM ,  SINGH HARMEET ,  COMENDANT KEITH ,  VAHEDI VAHID

Inventor： GAFF KEITH WILLIAM ,  SINGH HARMEET ,  COMENDANT KEITH ,  VAHEDI VAHID

IPC: H01L21/3065

CPC classification number: H01J37/20 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Abstract A plasma etching system having a substrate support assembly with multiple independently controllable heater zones. The plasma etching system is configured to control etching temperature of predetermined locations so that pre-etch and/or post-etch non-uniformity of critical device parameters can be compensated for.

Abstract translation: 摘要一种等离子体蚀刻系统，具有带多个可独立控制的加热器区域的基板支撑组件 等离子体蚀刻系统被配置为控制预定位置的蚀刻温度，使得可以补偿关键器件参数的预蚀刻和/或蚀刻后不均匀性。

公开(公告)号：WO2011056484A3

公开(公告)日：2011-08-04

申请号：PCT/US2010053858

申请日：2010-10-22

Applicant: LAM RES CORP ,  SINGH HARMEET ,  SANT SANKET ,  CHOU SHANG-I ,  VAHEDI VAHID ,  CASAES RAPHAEL ,  RAMACHANDRAN SEETHARAMAN

Inventor： SINGH HARMEET ,  SANT SANKET ,  CHOU SHANG-I ,  VAHEDI VAHID ,  CASAES RAPHAEL ,  RAMACHANDRAN SEETHARAMAN

IPC: H01L21/302 ,  H01L21/677

CPC classification number: H01L21/02057 ,  H01L21/67017 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67201 ,  H01L21/67207

Abstract: A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.

Abstract translation: 将晶片设置在入口加载锁定室中。 在入口装载锁定室中产生真空。 晶片被输送到处理工具。 在处理室中处理晶片以提供经处理的晶片，其中处理形成卤素残余物。 在处理晶片之后，在处理室中提供脱气步骤。 将经处理的晶片转移到脱气室中。 处理的晶片在脱气室中用UV光和包含臭氧，氧气或H 2 O中的至少一种的气体流进行处理。 停止气体流动。 UV灯停止。 将经处理的晶片从脱气室中取出。