中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

7 records (took 0.019 seconds)

    METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATIONS
    1.
    发明申请
    METHOD TO IMPROVE PROFILE CONTROL AND N/P LOADING IN DUAL DOPED GATE APPLICATIONS 审中-公开
    改进双层门控应用中的配置文件控制和N / P加载的方法

    公开(公告)号：WO2004079783A3

    公开(公告)日：2005-01-20

    申请号：PCT/US2004005944

    申请日：2004-02-26

    Applicant: LAM RES CORP ,  DEL PUPPO HELENE ,  LIN FRANK ,  LEE CHRIS ,  VAHEDI VAHID ,  KAMP THOMAS A ,  MILLER ALAN J

    Inventor： DEL PUPPO HELENE ,  LIN FRANK ,  LEE CHRIS ,  VAHEDI VAHID ,  KAMP THOMAS A ,  MILLER ALAN J

    IPC: H01L21/3213 ,  H01L21/302

    CPC classification number: H01L21/32137

    Abstract: A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

    Abstract translation: 提供了一种在等离子体蚀刻室中蚀刻多晶硅栅极结构的方法。 该方法开始于限定保护待蚀刻的多晶硅膜的图案。 然后，产生等离子体。 接下来，蚀刻大部分未被保护的多晶硅膜。 然后，引入含硅气体，并且在引入含硅气体的同时蚀刻剩余的多晶硅膜。 还提供了一种被配置为在蚀刻工艺期间引入含硅气体的蚀刻室。

    PLASMA PROCESSING METHOD AND APPARATUS WITH CONTROL OF PLASMA EXCITATION POWER
    4.
    发明申请
    PLASMA PROCESSING METHOD AND APPARATUS WITH CONTROL OF PLASMA EXCITATION POWER 审中-公开
    等离子体处理方法和控制等离子体激发能量的装置

    公开(公告)号：WO02080214A3

    公开(公告)日：2003-04-24

    申请号：PCT/US0209562

    申请日：2002-03-29

    Applicant: LAM RES CORP ,  NI TUQIANG ,  LIN FRANK ,  HUANG CHUNG-HO ,  JIANG WEINAN

    Inventor： NI TUQIANG ,  LIN FRANK ,  HUANG CHUNG-HO ,  JIANG WEINAN

    IPC: H01J37/32 ,  H01L21/762

    CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H01J37/3299

    Abstract: The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.

    Abstract translation: 响应于存储在计算机存储器中的信号，提供给真空等离子体处理室中的等离子体的RF功率的量在预编程的基础上逐渐改变。 计算机存储器存储信号，使得其他处理室参数（压力，气体种类和气体流速）在发生逐渐变化时保持恒定。 存储的信号使得能够蚀刻圆形拐角而不是锋利的边缘，例如在沟槽壁和基部的交叉处。

    6.
    发明专利
    未知

    公开(公告)号：AT475985T

    公开(公告)日：2010-08-15

    申请号：AT01920490

    申请日：2001-03-16

    Applicant: LAM RES CORP

    Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK ,  COLLISON WENLI

    IPC: H01L21/3213 ,  H05H1/46 ,  H01J37/32 ,  H01L21/3065

    Abstract: An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine-containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by minimizing a recombination rate of H and Br on a silicon carbide edge ring surrounding the substrate at a rate sufficient to offset a rate at which Br is consumed across the substrate. The method can be carried out using pure HBr or combination of HBr with other gases.

Patent Agency Ranking