公开(公告)号：SG2013059233A

公开(公告)日：2014-03-28

申请号：SG2013059233

申请日：2013-08-02

Applicant: LAM RES CORP

Inventor： ZHONG QINGHUA ,  LI SIYI ,  KIRAKOSIAN ARMEN ,  ZHOU YIFENG ,  VINNAKOTA RAMKUMAR ,  KUO MING-SHU ,  RAGHAVAN SRIKANTH ,  KIMURA YOSHIE ,  KIM TAE WON ,  KAMARTHY GOWRI

Abstract: A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer.