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    SILICON ON INSULATOR ETCH
    1.
    发明申请
    SILICON ON INSULATOR ETCH 审中-公开
    绝缘子绝缘硅

    公开(公告)号：WO2013088324A3

    公开(公告)日：2015-08-13

    申请号：PCT/IB2012057128

    申请日：2012-12-10

    Applicant: LAM RES CORP ,  LAM RES AG

    Inventor： LI SIYI ,  HEFTY ROBERT ,  ROBSON MARK TODHUNTER ,  BOWERS JAMES R ,  AUDREY CHARLES

    IPC: H01L21/3065

    CPC classification number: H01L21/32137 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116

    Abstract: A method etching features through a stack of a silicon nitride layer over a silicon layer over a silicon oxide layer in a plasma processing chamber is provided. The silicon nitride layer is etched in the plasma processing chamber, comprising; flowing a silicon nitride etch gas; forming the silicon nitride etch gas into a plasma to etch the silicon nitride layer, and stopping the flow of the silicon nitride etch gas. The silicon layer is, comprising flowing a silicon etchgas, wherein the silicon etch gas comprises SF6 or SiF4, forming the silicon etch gas into a, and stopping the flow of the silicon etch gas. The silicon oxide layer is etched in the plasma processing chamber, comprising flowing a silicon oxide etch gas, forming the silicon oxide etch gas into a plasma, and stopping the flow of the silicon oxide etch gas.

    Abstract translation: 提供了通过在等离子体处理室中的硅氧化物层上的硅层上的氮化硅层的堆叠的方法蚀刻特征。 在等离子体处理室中蚀刻氮化硅层，包括： 流动氮化硅蚀刻气体; 将氮化硅蚀刻气体形成等离子体以蚀刻氮化硅层，并停止氮化硅蚀刻气体的流动。 硅层包括流动硅蚀刻气体，其中硅蚀刻气体包括SF 6或SiF 4，将硅蚀刻气体形成硅并且阻止硅蚀刻气体的流动。 在等离子体处理室中蚀刻氧化硅层，包括使氧化硅蚀刻气体流动，将氧化硅蚀刻气体形成等离子体，并停止氧化硅蚀刻气体的流动。

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