公开(公告)号：SG10201500548QA

公开(公告)日：2015-09-29

申请号：SG10201500548Q

申请日：2015-01-23

Applicant: LAM RES CORP

Inventor： MONICA TITUS ,  GOWRI KAMARTHY ,  HARMEET SINGH ,  YOSHIE KIMURA ,  SHEN MEIHUA ,  ZHOU BAOSUO ,  ZHOU YIFENG ,  JOHN HOANG

Abstract: A method of planarizing an upper surface of a semiconductor substrate in a plasma etch chamber comprises supporting the substrate on a support surface of a substrate support assembly that includes an array of independently controlled thermal control elements therein which are operable to control the spatial and temporal temperature of the support surface of the substrate support assembly to form independently controllable heater zones which are formed to correspond to a desired temperature profile across the upper surface of the semiconductor substrate. The etch rate across the upper surface of the semiconductor substrate during plasma etching depends on a localized temperature thereof wherein the desired temperature profile is determined such that the upper surface of the semiconductor substrate is planarized within a predetermined time. The substrate is plasma etched for the predetermined time thereby planarizing the upper surface of the substrate.

公开(公告)号：SG2013059233A

公开(公告)日：2014-03-28

申请号：SG2013059233

申请日：2013-08-02

Applicant: LAM RES CORP

Inventor： ZHONG QINGHUA ,  LI SIYI ,  KIRAKOSIAN ARMEN ,  ZHOU YIFENG ,  VINNAKOTA RAMKUMAR ,  KUO MING-SHU ,  RAGHAVAN SRIKANTH ,  KIMURA YOSHIE ,  KIM TAE WON ,  KAMARTHY GOWRI

Abstract: A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer.