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公开(公告)号:IL166342A
公开(公告)日:2009-08-03
申请号:IL16634205
申请日:2005-01-17
Applicant: LAM RES CORP , HOWALD ARTHUR M , KUTHI ANDREAS , WILCOXSON MARK HENRY , III ANDREW D BAILEY
Inventor: HOWALD ARTHUR M , KUTHI ANDREAS , WILCOXSON MARK HENRY , III ANDREW D BAILEY
Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.
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公开(公告)号:AU2003256565A1
公开(公告)日:2004-02-09
申请号:AU2003256565
申请日:2003-07-17
Applicant: LAM RES CORP
Inventor: WILCOXSON MARK HENRY , BAILEY ANDREW D III , HOWALD ARTHUR M , KUTHI ANDREAS
Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.
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