公开(公告)号：WO2009143350A3

公开(公告)日：2010-03-04

申请号：PCT/US2009044847

申请日：2009-05-21

Applicant: LAM RES CORP ,  HOWARD BRADLEY J ,  PAPE ERIC ,  LI SIWEN

Inventor： HOWARD BRADLEY J ,  PAPE ERIC ,  LI SIWEN

IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32935 ,  H01J37/32972 ,  H01J37/3299

Abstract: A disclosed device comprises an edge bonding seal configured to be mounted to an edge bead of the electrostatic chuck. The edge bonding seal includes a monitoring layer comprised of a first material configured to either emit a species capable of being optically monitored or having an electrical resistance value capable of being monitored, or both. The edge bonding seal further includes an edge bonding layer configured to be interspersed at least between the monitoring layer and the plasma environment. The edge bonding layer is comprised of a second material susceptible to erosion due to reaction with the plasma environment and configured to expose the monitoring layer to the plasma environment upon sufficient exposure to the plasma environment.

Abstract translation: 所公开的装置包括构造成安装到静电卡盘的边缘珠缘上的边缘接合密封件。 边缘接合密封件包括由第一材料构成的监测层，该第一材料被配置为发射能够被光学监测的物质或具有能够被监测的电阻值，或两者。 边缘接合密封还包括边缘粘合层，其被配置为至少散布在监测层和等离子体环境之间。 边缘粘合层由与等离子体环境的反应易受侵蚀的第二材料组成，并且被配置为在充分暴露于等离子体环境时将监测层暴露于等离子体环境。

公开(公告)号：SG10201407562XA

公开(公告)日：2014-12-30

申请号：SG10201407562X

申请日：2012-12-18

Applicant: LAM RES CORP

Inventor： SHIH HONG ,  XU LIN ,  DHINDSA RAJINDER ,  DAUGHERTY JOHN ,  FANG YAN ,  LI SIWEN

Abstract: PLASMA PROCESSING DEVICES WITH CORROSION RESIST ANT COMPONENTS In one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located within the plasma processing chamber. The corrosion resistant component can be exposed to the plasma processing gas and is not coincident with the plasma region. The corrosion resistant component may include an inner layer of stainless steel that is coated with an outer layer of Tantalum CTa). FIG. 1 15

公开(公告)号：SG191539A1

公开(公告)日：2013-07-31

申请号：SG2012093910

申请日：2012-12-18

Applicant: LAM RES CORP

Inventor： SHIH HONG ,  XU LIN ,  DHINDSA RAJINDER ,  DAUGHERTY JOHN ,  FANG YAN ,  LI SIWEN

Abstract: PLASMA PROCESSING DEVICES WITH CORROSION RESISTANT COMPONENTSIn one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located within the plasma processing chamber. The corrosion resistant component can be exposed to the plasma processing gas and is not coincident with the plasma region. The corrosion resistant component may include an inner layer of stainless steel that is coated with an outer layer of Tantalum (Ta).FIG. 1