PERIPHERALLY ENGAGING ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME
    1.
    发明申请
    PERIPHERALLY ENGAGING ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
    外围接触电极载体和组装体

    公开(公告)号:WO2010002724A2

    公开(公告)日:2010-01-07

    申请号:PCT/US2009048797

    申请日:2009-06-26

    Abstract: In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.

    Abstract translation: 根据本公开的一个实施例,提供了包括多组分电极和外围接合电极载体的组件。 外围接合电极载体包括载体框架和多个往复电极支撑件。 多组分电极位于载体框架的电极容纳孔中。 电极的背板包括围绕其周边形成的多个安装凹部。 往复式电极支撑件可以往复运动进入和离开安装凹槽。 考虑到更广泛和更窄范围的另外的实施例。

    PROCESSES FOR RECONDITIONING MULTI-COMPONENT ELECTRODES
    2.
    发明申请
    PROCESSES FOR RECONDITIONING MULTI-COMPONENT ELECTRODES 审中-公开
    用于重新组装多组分电极的方法

    公开(公告)号:WO2010002631A2

    公开(公告)日:2010-01-07

    申请号:PCT/US2009048244

    申请日:2009-06-23

    CPC classification number: H01J37/32862 H01J37/32559

    Abstract: A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated.

    Abstract translation: 提供了一种用于再生多组分电极的方法,其包括结合到导电背板的硅电极。 该方法包括:(i)通过将多组分电极浸入含有硫酸,过氧化氢和水的基本上不含醇的DSP溶液中并从而从多组分电极中除去金属离子,并用去离子水冲洗多组分电极, 电离水; (ii)在从其去除金属离子之后抛光多组分电极的一个或多个表面; 和(iii)通过用包含氢氟酸,硝酸,乙酸和水的混合酸溶液处理抛光的多组分电极,并通过用处理过的多组分电极进行漂洗来处理多组分电极的硅表面的污染物 去离子水。 考虑到更广泛和更窄范围的另外的实施例。

    BACKSIDE MOUNTED ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME
    3.
    发明申请
    BACKSIDE MOUNTED ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
    背面安装的电极载体和装配的装置

    公开(公告)号:WO2010002722A2

    公开(公告)日:2010-01-07

    申请号:PCT/US2009048794

    申请日:2009-06-26

    CPC classification number: H01J37/32568 H01J37/32091 H01J37/32605

    Abstract: A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated.

    Abstract translation: 提供的载体组件包括背面安装的电极载体和电极安装硬件。 背面安装的电极载体包括电极容纳孔,电极容纳孔又包括被配置为限制位于孔中的电极的横向移动的侧壁结构。 电极容纳孔还包括支撑位于孔中的电极的重量的一个或多个侧壁突起。 电极安装硬件被配置成从位于载体的背面的电极容纳孔中的电极接合,并且将电极推向侧壁突起,以限制电极在电极容纳孔中的轴向移动。 考虑到更广泛和更窄范围的另外的实施例。

    SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK
    5.
    发明申请
    SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK 审中-公开
    用于测试静电卡盘的系统和方法

    公开(公告)号:WO2010042908A2

    公开(公告)日:2010-04-15

    申请号:PCT/US2009060290

    申请日:2009-10-10

    CPC classification number: H01L21/6833

    Abstract: The present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.

    Abstract translation: 本发明提供了用于预测静电卡盘(ESC)的令人满意的性能的可靠的非侵入式电测试方法。 根据本发明的一个方面,在频带上测量ESC的参数,例如阻抗,以产生参数功能。 该参数功能可用于建立频带内参数的预定可接受极限。

    METHOD OF WET CLEANING ALUMINUM CHAMBER PARTS

    公开(公告)号:SG2013090360A

    公开(公告)日:2014-07-30

    申请号:SG2013090360

    申请日:2013-12-03

    Applicant: LAM RES CORP

    Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.

    SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCK

    公开(公告)号:SG194409A1

    公开(公告)日:2013-11-29

    申请号:SG2013074539

    申请日:2009-10-10

    Applicant: LAM RES CORP

    Abstract: SYSTEM AND METHOD FOR TESTING AN ELECTROSTATIC CHUCKThe present invention provides a reliable, non-invasive, electrical test method for predicting satisfactory performance of electrostatic chucks (ESCs). In accordance with an aspect of the present invention, a parameter, e.g., impedance, of an ESC is measured over a frequency band to generate a parameter functions. This parameter function may be used to establish predetermined acceptable limits of the parameter within the frequency band.FIGS

    PLASMA PROCESSING DEVICES WITH CORROSION RESISTANT COMPONENTS

    公开(公告)号:SG10201407562XA

    公开(公告)日:2014-12-30

    申请号:SG10201407562X

    申请日:2012-12-18

    Applicant: LAM RES CORP

    Abstract: PLASMA PROCESSING DEVICES WITH CORROSION RESIST ANT COMPONENTS In one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located within the plasma processing chamber. The corrosion resistant component can be exposed to the plasma processing gas and is not coincident with the plasma region. The corrosion resistant component may include an inner layer of stainless steel that is coated with an outer layer of Tantalum CTa). FIG. 1 15

    PLASMA PROCESSING DEVICES WITH CORROSION RESISTANT COMPONENTS

    公开(公告)号:SG191539A1

    公开(公告)日:2013-07-31

    申请号:SG2012093910

    申请日:2012-12-18

    Applicant: LAM RES CORP

    Abstract: PLASMA PROCESSING DEVICES WITH CORROSION RESISTANT COMPONENTSIn one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located within the plasma processing chamber. The corrosion resistant component can be exposed to the plasma processing gas and is not coincident with the plasma region. The corrosion resistant component may include an inner layer of stainless steel that is coated with an outer layer of Tantalum (Ta).FIG. 1

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