公开(公告)号：AT524824T

公开(公告)日：2011-09-15

申请号：AT05854136

申请日：2005-12-15

Applicant: LAM RES CORP

Inventor： HUANG TUOCHUAN ,  REN DAXING ,  SHIH HONG ,  ZHOU CATHERINE ,  YAN CHUN ,  MAGNI ENRICO ,  YEN BI ,  HUBACEK JEROME ,  LIM DAE ,  SUNG DOUGYONG

IPC: H01L21/00 ,  B08B3/12 ,  B24B1/00

Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.