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公开(公告)号：JP2006009154A
公开(公告)日：2006-01-12
申请号：JP2005186284
申请日：2005-06-27
Applicant: Lam Res Corp , ラム リサーチ コーポレーションLam Research Corporation
Inventor： DORDI YEZDI , MARASCHIN BOB , BOYD JOHN , REDEKER FRED C
Abstract: PROBLEM TO BE SOLVED: To provide an electroplating head giving a uniform current distribution to the whole of a wafer and giving a uniform plating thickness, and to provide a method for operating the same. SOLUTION: An electroplating head 100 is disposed in the upper part of a wafer 307. The head includes a main chamber 105, anode chambers 105A, 105B, anodes 115A, 115B arranged at the anode chambers, a fluid entrance 111, a fluid exit 112, and a porous resistive material 119 disposed at the fluid exit. The main chamber is separated from the anode chambers by membranes 109A, 109B penetrating anions. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种给整个晶片提供均匀电流分布并给出均匀电镀厚度的电镀头，并提供一种操作该电镀头的方法。 解决方案：电镀头100设置在晶片307的上部。头包括主室105，布置在阳极室的阳极室105A，105B，阳极115A，115B，流体入口111， 流体出口112和布置在流体出口处的多孔电阻材料119。 通过穿透阴离子的膜109A，109B将主室与阳极室分离。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2006009153A
公开(公告)日：2006-01-12
申请号：JP2005186277
申请日：2005-06-27
Applicant: Lam Res Corp , ラム リサーチ コーポレーションLam Research Corporation
Inventor： DORDI YEZDI , MARASCHIN BOB , BOYD JOHN , REDEKER FRED C , WOODS CARL
CPC classification number: C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and a method for plating the whole of a semiconductor wafer having many electrodes at a uniform current distribution. SOLUTION: First and second electrodes 107A, 107B are disposed at locations, respectively, proximate to a periphery of a wafer support 103, wherein the locations are substantially opposed to each other relative to the wafer support 103. Each of the electrodes can be moved to electrically connect with and disconnect from a wafer 101 held by the wafer support 103. An anode 109 is disposed over and proximate to the wafer 101 such that a meniscus 111 of electroplating solution is maintained between the anode 109 and the wafer 101. As the anode 109 moves over the wafer 101 from the first location to the second location, an electric current is applied through the meniscus 111 between the anode 109 and the wafer 101. Also, as the anode 109 is moved over the wafer 101, the first and second electrodes 107A, 107B are controlled to connect with the wafer 101 while ensuring that the anode 109 does not pass over an electrode that is connected. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种以均匀电流分布电镀具有许多电极的整个半导体晶片的装置和方法。 解决方案：第一和第二电极107A，107B分别设置在靠近晶片支撑件103的周边的位置处，其中，这些位置相对于晶片支撑件103基本上彼此相对。每个电极可以 被移动以与由晶片支撑件103保持的晶片101电连接和断开。阳极109设置在晶片101上方并且靠近晶片101，使得电镀溶液的弯月面111保持在阳极109和晶片101之间。 当阳极109从晶片101从第一位置移动到第二位置时，通过阳极109和晶片101之间的弯液面111施加电流。而且，当阳极109移动到晶片101上时， 第一和第二电极107A，107B被控制以与晶片101连接，同时确保阳极109不通过连接的电极。 版权所有（C）2006，JPO＆NCIPI
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Patent Agency Ranking
公开(公告)号：SG149018A1
公开(公告)日：2009-01-29
申请号：SG2008092041
申请日：2004-12-07
Applicant: LAM RES CORP
Inventor： DORDI YEZDI , BOYD JOHN , THIE WILLIAM , MARASCHIN BOB , REDEKER FRED C , COOK JOEL M
Abstract: METHOD AND APPARATUS FOR MATERIAL DEPOSITION A method and an apparatus are provided for selective heating of a surface of a wafer exposed to an electroless plating solution. Selective heating by a radiant energy source causes a temperature increase at an interface between the wafer surface and the electroless plating solution. This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source. Additionally, a planar member can be positioned over and proximate to the wafer surface to entrap electroless plating solution between the planar member and the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member. Fig 2A
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公开(公告)号：SG153857A1
公开(公告)日：2009-07-29
申请号：SG2009043290
申请日：2005-06-28
Applicant: LAM RES CORP
Inventor： DORDI YEZDI , MARASCHIN BOB , BOYD JOHN , REDEKER FRED C
Abstract: An electroplating head including a chamber having a fluid entrance and a fluid exit is provided. The chamber is configured to contain a flow of electroplating solution from the fluid entrance to the fluid exit. The electroplating head also includes an anode disposed within the chamber. The anode is configured to be electrically connected to a power supply. The electroplating head further includes a porous resistive material disposed at the fluid exit such that the flow of electroplating solution is required to traverse through the porous resistive material,
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公开(公告)号：SG182190A1
公开(公告)日：2012-07-30
申请号：SG2012043196
申请日：2004-12-07
Applicant: LAM RES CORP
Inventor： DORDI YEZDI , BOYD JOHN , THIE WILLIAM , MARASCHIN BOB , REDEKER FRED C , COOK JOEL M
Abstract: OF THE DISCLOSURE A method and an apparatus are provided for selective heating of a surface of a wafer5 exposed to an electroless plating solution. Selective heating by a radiant energy source causes a temperature increase at an interface between the wafer surface and the electroless plating solution. This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately10 defined radiant energy source. Additionally, a planar member can be positioned over and proximate to the wafer surface to entrap electroless plating solution between the planar member and the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.15 Figure 2A
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公开(公告)号：MY147719A
公开(公告)日：2013-01-15
申请号：MYPI20052853
申请日：2005-06-22
Applicant: LAM RES CORP
Inventor： DORDI YEZDI , MARASCHIN BOB , BOYD JOHN , REDEKER FRED C , WOODS CARL
IPC: H01L21/288 , C25D7/12
Abstract: FIRST AND SECOND ELECTRODES (107A, 107B) ARE DISPOSED AT FIRST AND SECOND LOCATIONS, RESPECTIVELY, PROXIMATE TO A PERIPHERY OF A WAFER SUPPORT (103), WHEREIN THE FIRST AND SECOND LOCATION ARE SUBSTANTIALLY OPPOSED TO EACH OTHER RELATIVE TO THE WAFER SUPPORT. EACH OF THE FIRST AND SECOND ELECTRODES CAN BE MOVED TO ELECTRICALLY CONNECT WITH AND DISCONNECT FROM A WAFER (101) HELD BY THE WAFER SUPPORT. AN ANODE (109) IS DISPOSED OVER AND PROXIMATE TO THE WAFER SUCH THAT A MENISCUS (111) OF ELECTROPLATING SOLUTION IS MAINTAINED BETWEEN THE ANODE AND THE WAFER. AS THE ANODE MOVES OVER THE WAFER FROM THE FIRST LOCATION TO THE SECOND LOCATION, AN ELECTRIC CURRENT IS APPLIED THROUGH THE MENISCUS BETWEEN THE ANODE AND THE WAFER. ALSO, AS THE ANODE IS MOVED OVER THE WAFER, THE FIRST AND SECOND ELECTRODES ARE CONTROLLED TO CONNECT WITH THE WAFER WHILE ENSURING THE ANODE DOES NOT PASS OVER AN ELECTRODE THAT IS CONNECTED.
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公开(公告)号：SG149019A1
公开(公告)日：2009-01-29
申请号：SG2008092058
申请日：2004-12-07
Applicant: LAM RES CORP
Inventor： DORDI YEZDI , BOYD JOHN , THIE WILLIAM , MARASCHIN BOB , REDEKER FRED C , COOK JOEL M
Abstract: METHOD AND APPARATUS FOR MATERIAL DEPOSITION A method and an apparatus are provided for selective heating of a surface of a wafer exposed to an electroless plating solution. Selective heating by a radiant energy source causes a temperature increase at an interface between the wafer surface and the electroless plating solution. This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source. Additionally, a planar member can be positioned over and proximate to the wafer surface to entrap electroless plating solution between the planar member and the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member. Fig 2A
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